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MK48Z09 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
MK48Z09-15	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF
MK48Z09-15	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
MK48Z09-20	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF
MK48Z09-20	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
MK48Z09-25	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF
MK48Z09-25	Unknown	Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets	Scan	PDF
MK48Z09-70	STMicroelectronics	CMOS 8K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09B10	STMicroelectronics	CMOS 8K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09-B10	STMicroelectronics	8 K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09B100	STMicroelectronics	100ns 1W 20mA V(dd): -0.3 to +7.0V CMOS 8K x 8 zeropower SRAM	Scan	PDF
MK48Z09-B12	STMicroelectronics	8 K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09B-15	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF
MK48Z09B-15	Thomson Semiconductors	8K x 8 Zeropower RAM	Scan	PDF
MK48Z09B-20	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF

MK48Z09-B20	STMicroelectronics	8 K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09B-20	Thomson Semiconductors	8K x 8 Zeropower RAM	Scan	PDF
MK48Z09B-25	Mostek	8K x 8 ZEROPOWER RAM	Scan	PDF
MK48Z09B-25	Thomson Semiconductors	8K x 8 Zeropower RAM	Scan	PDF
MK48Z09-B55	STMicroelectronics	8 K x 8 ZEROPOWER SRAM	Scan	PDF
MK48Z09B70	STMicroelectronics	70ns 1W 20mA V(dd): -0.3 to +7.0V CMOS 8K x 8 zeropower SRAM	Scan	PDF

MK48Z09 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
M48Z09 Abstract: M48Z19 MK48Z09 Text: M48Z09 M48Z19 CMOS 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION POWER-FAIL INTERRUPT CHOICE of TWO WRITE PROTECT	Original	M48Z09 M48Z19 M48Z09: M48Z19: MK48Z09, PCDIP28 A0-A12 M48Z09 M48Z19 MK48Z09	PDF
H99XXYYZZ Abstract: M48Z09 M48Z19 MK48Z09 AI00962 Text: M48Z09 M48Z19 CMOS 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION POWER-FAIL INTERRUPT CHOICE of TWO WRITE PROTECT	Original	M48Z09 M48Z19 M48Z09: M48Z19: MK48Z09, M48Z09 MK48Z09 600mil M48Z0This H99XXYYZZ M48Z19 AI00962	PDF
TEA7052DP Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019 Text: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit	Original	L3280AB LS256B LS285AB1 LS588N1 LS656AB TEA7052DP TEA7063DP L3100B1 LS5120B LS5060B ls285ab TEA7531DP 7532DP M3541B LS588N pnp for 2n3019	PDF
dallas nvram Abstract: dallas nvram DS1225AB DS1225Y 451 cross-reference DS1225AB M48Z35AY MK48Z08 MK48Z09 sonos nvsram Text: nvSRAM versus Battery Backed-up SRAM Introduction With lead-free initiatives being implemented globally for 2006, nvSRAMs have become a very popular choice for NVRAM selection. This white paper explores the additional advantages of nvSRAM over Battery backed SRAM BBSRAM ,	Original	STK10CXX STK11CXX STK12CXX STK15CXX STK16CXX DS1225AB DS1225D DS1225Y MK48Z08 MK48Z09 dallas nvram dallas nvram DS1225AB DS1225Y 451 cross-reference DS1225AB M48Z35AY MK48Z08 MK48Z09 sonos nvsram	PDF
smd transistor x8 Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100 Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series	Original	ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 PBL3717A L6201/2/3 L6204 smd transistor x8 smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100	PDF
DS1225Y Abstract: dallas ds1225y MK48Z09 DS1225AB MK48Z08 STK14C88 Text: Comparison of SIMTEK nvSRAM versus Battery Backed-up SRAM Introduction STK10C family , by executing a software sequence (STK11C family), or automatically upon power loss (AutoStore and AutoStorePlus™ families). The information is loaded back into the SRAM automatically on power-up or by using the hardware or software function.	Original	STK10C STK11C STK10Cxx STK11Cxx STK12Cxx STK14C88 STK15Cxx STK16Cxx DS1225AB DS1225D DS1225Y dallas ds1225y MK48Z09 DS1225AB MK48Z08 STK14C88	PDF
dallas ds1225y Abstract: NVSRAM DS1225Y MK48Z08 MK48Z09 STK10C68 STK11C68 STK12C68 MK48Z30 DS1225D Text: nvSRAM vs. Battery Back-up SRAMs Comparison of SIMTEK nvSRAM vs. Battery Back-up SRAMs This document summarizes two options for nonvolatile memory: Simtek Corporation's nvSRAM and battery backed-up SRAM from other manufacturers. What is an nvSRAM? Simtek's nvSRAM is a high performance SRAM with a	Original	350mil DS1225AB/AD DS1225D/E DS1225Y MK48Z08 MK48Z09 BQ4010 BQ4010Y STK10C68 STK11C68 dallas ds1225y NVSRAM DS1225Y STK10C68 STK11C68 STK12C68 MK48Z30 DS1225D	PDF
MK48Z09 Abstract: No abstract text available Text: rz7 SGS-THOMSON HJtgïTGMOOS APPLICATION NOTE POWER FAIL INTERRUPT OF THE MK48Z09/19 A frequent dilemma faced by system designers is how to handle a power failure. Because power fail sensing components add real estate and cost to the system, some designers choose not to imple	OCR Scan	MK48Z09/19 10jis 40jis MK48Z09/19, MK48Z09	PDF
T1A12 Abstract: MK48Z09 M48Z09 M48Z19 Text: M48Z09 M48Z19 /S T SGS-THOMSON ^7# [M ^©ILi©T0M[] g§ CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z09.19 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ 11 YEARS of DATA RETENTION in the ABSENCE of POWER ■ CHOICE of TWO WRITE PROTECT	OCR Scan	MK48Z09 M48Z09: M48Z19: M48Z09 M48Z19 600mil A0-A12 T1A12 M48Z19	PDF
Zeropower ram MK48Z Abstract: MK48Z08B-20 MK48Z08B-25 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25 Text: COMPONENTS 8K 8 ZEROPO W ER RAM MOSTEK MEMORY COM PONENTS □ Predicted Worst Case Battery Life of 11 years @ 70°C NC 1 c □ 28 < o o FEATURES A ,2 2 C n 27 w □ 26 NC \ O 4 O □ 25 Aa A5 5 □ □ 24 A„ A4 6 C □ 23 A„ G □ Data retention in th e absence of pow er	OCR Scan	MK48Z08/18/09/19 MK48Z09/19) MK48Z08/09) MK48Z08/09: MK48Z18/19: MK48Z08B-25 MK48Z08ein Zeropower ram MK48Z MK48Z08B-20 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25	PDF
Untitled Abstract: No abstract text available Text: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF	OCR Scan	MK48Z18/19 MK48Z08/18/09/19 MK48Z08 MK48Z08 PHDIP28 100ns	PDF
MK48T18B15 Abstract: MK48T18B10 MK48T18B-20 MK48T08B-15 MK48T18B20 MK48T18b-15 MK48T08B15 MK48T08B10 MK48T08B20 MK48T18B Text: • r z ^ 7 # 7 ^ 537 0 0 5 7^5 7 R ■ j S C S -T H O M . H in ig E O ilL iM W n E S < ' ¿ ib 'Z Z - ^_ S O N S G S-THOMSON M K 4 8 T 0 8 /1 8 (B _ - 1 0 / 1 5 / 2 0 3QE D T IM E K E E PE R 8 K X 8 ZEROPOWER™ RAM ■ INTEGRATED ULTRA LOW POWER SRAM,	OCR Scan	T08/18 MK48T18B15 MK48T18B10 MK48T18B-20 MK48T08B-15 MK48T18B20 MK48T18b-15 MK48T08B15 MK48T08B10 MK48T08B20 MK48T18B	PDF
MK48Z08 equivalent Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram Text: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - \|2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT	OCR Scan	MK48Z08 MK48Z09 -MK48Z08/09- MK48Z18/19 MK48Z08/18/09/19 vr000825 MK48Z08 PHDIP28 71E1E3? MK48Z08 equivalent MK48Z18 PHDIP thomson tv circuit diagram	PDF
d2764c Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706 Text: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT	OCR Scan	Z8000 d2764c MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706	PDF

SGS MK48T18 Abstract: MK48T08 TIMEKEEPER Text: ^¿7=#7. SGS-THOMSON RÆô [S Q iL[i©ir^(ô)Mô(gi APPLICATION NOTE UPGRADED MEMORY CAPABILITY USING ZEROPOWER AND TIMEKEEPER PRODUCTS Systems that need read/write non-volatile memory have several choices available: EEPROM, SRAM plus battery or the ZEROPOWER and	OCR Scan	MK48Z32. MK48Z02 MK48Z08 MK48Z09 MK48Z19 MK48Z32 MK48T02 MK48T08 MK48T18 SGS MK48T18 TIMEKEEPER	PDF
MK48Z08 equivalent Abstract: MK48Z09 Text: ÎZ S C S -T H O M S O N 7 ^ 7 /« M K 4 8 Z 0 8 /1 8 /0 9 /1 9 B -5 5 /7 0 /1 0 /1 5 /2 0 8 K X 8 ZEROPOWER SRAM ü FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. DIP-28 PIN CONNECTIONS ■ READ-CYCLE TIME EQUALS WRITE-CYCLE	OCR Scan	MK48Z08/09 K48Z18/19-4 DIP-28 MK48Z08/18/09/19 MK48Z08 equivalent MK48Z09	PDF
c 1237 Abstract: STU 438 8K X 8 Static RAM M48Z09 M48Z19 Text: $ 7 . M48Z09 M48Z19 SGS-THOMSON ElD g[Si@ilLI re©iO(gS CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES - READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATICPOWER-FAL CHIP DESELECTand	OCR Scan	M48Z09 M48Z19 M48Z19 MK48Z09 19ZEROPOWER® 600mil M48ZD9, c 1237 STU 438 8K X 8 Static RAM	PDF
Untitled Abstract: No abstract text available Text: /3 T *7 M « S G S -1 H 0 M S 0 N M K 4 8 Z 0 8 /1 8 /0 9 /1 9 B ! I] 0 » i L i( g T O [ i l ( g S _ - 5 5 /7 0 /1 0 /1 5 /2 0 8 K X 8 ZEROPOWER SRAM FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POW ER-FAIL CO N TRO L CIRCUIT AND BAT TERY.	OCR Scan	K48Z08/09 K48Z18/19 MK48Z09-B70 MK48Z09-B10 MK48Z09-B12 MK48Z09-B20 MK48Z19-B55 MK48Z19-B70 MK48Z19-B10 MK48Z19-B15	PDF
IDT7164L25 Abstract: M4821 Mostek IDT7164L20 IDT7164L30 IDT7164L35 IDT7164S20 IDT7164S25 IDT7164S35 IDT7165L-30 Text: 96 6 4 K x m % tt £ rc TAAC max ns) TCAC max (ns) 4 CMOS + TOE max (ns) TOH min (ns) y TOD nax (ns) y S t a t i c W TWP min (ns) TDS •in (is) R A M (81 9 2 X 8 ) 2 8 P I N A 14 TDH min (ns) TWD ■in (ns) TWR nax (ns) V D D or V C C (V) I DD max (mA)	OCR Scan	28PIN IDT7164S20 IDT7164S25 IDT71B4S30 IDT7164S35 MK48Z19-20 HK48Z19-25 VT20C VTZ0C98-35 Z0C98-45 IDT7164L25 M4821 Mostek IDT7164L20 IDT7164L30 IDT7164L35 IDT7165L-30	PDF
48z08 Abstract: MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20 Text: MK48Z08/18/09/19 B -55/70/10/15/20 S G S -T H O M S O N • y 8 K X 8 ZEROPOWER SRAM FEATURES B ■ INTEGRATED ULTRA LOW POWER SRAM, POW ER-FAIL CO N TRO L CIRCUIT AND BAT TERY. DIP-28 (Plastic with BatteryTop Hat) ■ UNLIM ITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE	OCR Scan	MK48Z08/18/09/19 MK48Z08/09 MK48Z18/19 MK48ZXX-55 MK48ZXX-70 MK48ZXX-10 MK48ZXX-15 MK48ZXX-20 DIP-28 8Z09-B70 48z08 MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20	PDF
256x16 eprom Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1	OCR Scan	ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B	PDF
Zeropower ram MK48Z Abstract: MK48Z18B-25 jis h 8502 MK48Z08B-20 MK48Z08B-15 MK48Z09B-25 MK48Z18B-15 MK48Z08B20 Text: 8K 8 ZERO PO W ER RAM MEMORY CO M PO NENTS P R E L IM IN A R Y FEATURES □ Predicted Worst Case Battery Life of 11 years @ 70°C □ Data retention in the absence of power □ Power Fail Interrupt Output WlK48Z09/19 □ Direct replacement for volatile 8K x 8 Byte Wide	OCR Scan	MK48Z08/18/09/19 WlK48Z09/19) MK48Z08/09) 28-Pin K48Z08/09: MK48Z18/19: MK48Z0BB-25 Zeropower ram MK48Z MK48Z18B-25 jis h 8502 MK48Z08B-20 MK48Z08B-15 MK48Z09B-25 MK48Z18B-15 MK48Z08B20	PDF
stm 8322 Abstract: 48Z08 MK48Z09 Text: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE	OCR Scan	48Z08/09-4 MK48Z18/19 48Z08 K48Z18 MK48Z08/18/09/19 MK48Z08 PHDIP28 100ns stm 8322 MK48Z09	PDF
MK45H14 Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .	OCR Scan	M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA	PDF

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MK48Z09 Price and Stock

STMicroelectronics MK48Z09B10

MK48Z09 Datasheets (21)

MK48Z09 Datasheets Context Search

M48Z09

H99XXYYZZ

TEA7052DP

dallas nvram

smd transistor x8

DS1225Y

dallas ds1225y

MK48Z09

T1A12

Zeropower ram MK48Z

Untitled

MK48T18B15

MK48Z08 equivalent

d2764c

SGS MK48T18

MK48Z08 equivalent

c 1237

Untitled

IDT7164L25

48z08

256x16 eprom

Zeropower ram MK48Z

stm 8322

MK45H14