G3N60B3
Abstract: G3N60B HGT1S3N60B3 HGT1S3N60B3S HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 Semiconductor 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
|
Original
|
HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
G3N60B
HGT1S3N60B3
HGTD3N60B3
HGTD3N60B3S
HGTD3N60B3S9A
|
PDF
|
G3N60B3
Abstract: G3N60B HGTD3N60B3 TO-262AA equivalent
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
|
Original
|
HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
G3N60B
HGTD3N60B3
TO-262AA equivalent
|
PDF
|
SVD7N60F
Abstract: 7A SF 2TC2-5
Text: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS VDMOS 1 3 AC-DC H DC-DC 1. 2. 3. PMW 1 ∗ 7A 600V RDS on =1.2Ω@VGS=10V ∗ 1 23 23 TO-220F-3L TO-220-3L ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C) SVD7N60T
|
Original
|
SVD7N60T/SVD7N60F
SVD7N60T/F
O-220F-3L
O-220-3L
SVD7N60T
SVD7N60F
SVD7N60F
7A SF
2TC2-5
|
PDF
|
HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
|
Original
|
HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
150oC.
HGTD3N60B3S
HGTD3N60B3S9A
HGTP3N60B3
|
PDF
|
SVD7N60F
Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
Text: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)
|
Original
|
SVD7N60T/SVD7N60F
SVD7N60T/F
O-220F-3L
O-220-3L
SVD7N60T
SVD7N60F
SVD7N60F
SVD7N60
SVD7n
BVDSS
VDS 30v ID70A
svd7n60t
10vtD
7A SF
TO-220-3L
VDMOS
|
PDF
|
G3N60B3
Abstract: HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 2001 7a
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
|
Original
|
HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
150oC.
HGTP3N60B3
G3N60B3
HGTD3N60B3S
HGTD3N60B3S9A
RHRD460
2001 7a
|
PDF
|
HGT1S3N60B3S
Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
|
Original
|
HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTD3N60B3S
HGTD3N60B3S9A
HGTP3N60B3
RHRD460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOD7S65/AOU7S65
AOD7S65
AOU7S65
Maxi65
|
PDF
|
G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334 7a600v
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
|
Original
|
HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
G3N60B3D
mosfet 4414
HGT1S3N60B3DS9A
RHRD460
TB334
7a600v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOD7S65/AOU7S65
AOD7S65
AOU7S65
AOD7S65
AOU7S65
|
PDF
|
AOD7S60
Abstract: aou7s60
Text: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOD7S60/AOU7S60
AOD7S60
AOU7S60
AOD7S60
AOU7S60
|
PDF
|
AOWF7S60
Abstract: No abstract text available
Text: AOW7S60/AOWF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOW7S60 & AOWF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOW7S60/AOWF7S60
AOW7S60
AOWF7S60
O-262
O-262F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOD7S60/AOU7S60
AOD7S60
AOU7S60
1TO251
Absol60
|
PDF
|
HGT1S3N60B3DS
Abstract: HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
HGT1S3N60B3DS9A
RHRD460
TB334
|
PDF
|
|
|
AOB7S60
Abstract: No abstract text available
Text: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOT7S60/AOB7S60/AOTF7S60
AOT7S60
AOB7S60
AOTF7S60
AOT7S60L
AOB7S60L
AOTF7S60L
O-220
O-263
O-220F
AOB7S60
|
PDF
|
G3N60B3D
Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Text: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
|
Original
|
HGTP3N60B3D,
HGT1S3N60B3DS
HGTP3N60B3D
HGT1S3N60B3DS
150oC.
RHRD460.
TA49192.
G3N60B3D
mosfet 4414
HGT1S3N60B3DS9A
RHRD460
TB334
|
PDF
|
7S60
Abstract: AOTF7S60L
Text: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
|
Original
|
AOT7S60/AOB7S60/AOTF7S60
AOT7S60
AOB7S60
AOTF7S60
AOT7S60L
AOB7S60L
AOTF7S60L
O-220
O-220F
O-263
7S60
AOTF7S60L
|
PDF
|
2SK2562-01R
Abstract: 2sk2562
Text: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
Original
|
2SK2562-01R
2SK2562-01R
2sk2562
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2765-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 2Ω 7A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
|
Original
|
2SK2765-01
|
PDF
|
2sk2562
Abstract: MOSFET 800V 3A 2SK2562-01R
Text: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
Original
|
2SK2562-01R
2sk2562
MOSFET 800V 3A
2SK2562-01R
|
PDF
|
G3N60B
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
|
OCR Scan
|
HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
GTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
115ns
1-800-4-HARRIS
G3N60B
|
PDF
|
G3N60B3
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
|
OCR Scan
|
HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
1-800-4-HARRIS
G3N60B3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
OCR Scan
|
APT6017WVR
O-267
APT6017W
00A/ps)
IL-STD-750
|
PDF
|
G3N60B3
Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Text: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
|
OCR Scan
|
HGTD3N60B3S,
HGT1S3N60B3S,
HGTP3N60B3
HGT1S3N60B3S
HGTP3N60B3
G3N60B3
Transistor No C110
transistor C110
tr c110
HGTD3N60B3S
HGTD3N60B3S9A
LD26
|
PDF
|
