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SVD7N60F Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS Text: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)	Original	PDF	SVD7N60T/SVD7N60F SVD7N60T/F O-220F-3L O-220-3L SVD7N60T SVD7N60F SVD7N60F SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
SVD7N60F Abstract: 7A600V VDS300V 600VVGS Text: SVD7N60T/SVD7N60F 7A600V N沟道增强型场效应管描述 2 SVD7N60T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技术制 1 造。先进的工艺及条状的原胞设计结构使得该产品具有较	Original	PDF	SVD7N60T/SVD7N60F 7A600V SVD7N60T/F 7A600VRDS O-220F-3L O-220-3L SVD7N60T SVD7N60F SVD7N60F VDS300V 600VVGS
SVD7N60F Abstract: 7A SF 2TC2-5 Text: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS VDMOS 1 3 AC-DC H DC-DC 1. 2. 3. PMW 1 ∗ 7A 600V RDS on =1.2Ω@VGS=10V ∗ 1 23 23 TO-220F-3L TO-220-3L ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C) SVD7N60T	Original	PDF	SVD7N60T/SVD7N60F SVD7N60T/F O-220F-3L O-220-3L SVD7N60T SVD7N60F SVD7N60F 7A SF 2TC2-5
SVD7N60F Abstract: TO-220F-3L Text: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored	Original	PDF	SVD7N60T/SVD7N60F SVD7N60T O-220-3L 50Unit/Totes: O-220F-3L SVD7N60F TO-220F-3L