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    MOS MARKING JC Search Results

    MOS MARKING JC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOS MARKING JC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    LP0801

    Abstract: sot-23 P-Channel MOSFET MOSFET P-channel SOT-23 on semiconductor marking code sot p-Channel Logic Level Enhancement Mode sot-23 LP0801K1
    Text: LP0801 LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-236AB* Dice P8U❋ -16.5V 12.0Ω -200mA -1.0V LP0801K1 LP0801ND where ❋ = 2-week alpha date code


    Original     		PDF LP0801 O-236AB* -200mA LP0801K1 LP0801ND OT-23: OT-23. -50mA LP0801 sot-23 P-Channel MOSFET MOSFET P-channel SOT-23 on semiconductor marking code sot p-Channel Logic Level Enhancement Mode sot-23 LP0801K1

    transistor D 1666

    Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET

    RD60HUF1-101

    Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF1-101 Rf power transistor mosfet UHF transistor FET 100OHM PINw10 transistor A 1568 mitsubishi 250

    100OHM

    Abstract: RD45HMF1 MOSFET "CURRENT source"
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101 100OHM MOSFET "CURRENT source"

    D 1652 transistor

    Abstract: MITSUBISHI RF POWER MOS FET RD20HMF1 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original     		PDF RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFE D 1652 transistor MITSUBISHI RF POWER MOS FET 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748

    TPCP8F01

    Abstract: MARKING CODE 24 TRANSISTOR
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A 5 8 • 0.475 High DC current gain: hFE = 200 to 500 IC = −0.5 A


    Original     		PDF TPCP8F01 TPCP8F01 MARKING CODE 24 TRANSISTOR

    RD16HHF1

    Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8

    RD16HHF1

    Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		PDF RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet

    transistor 636 mitsubishi

    Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 transistor 636 mitsubishi rd30 100OHM RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734

    MAR 618 transistor

    Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz


    Original     		PDF RD06HHF1 30MHz 30MHz RD06HHF1 RD06HHF1-th MAR 618 transistor MAR 737 transistor d 1557 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231

    MAR 618 transistor

    Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET

    Untitled

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for


    Original     		PDF TPCP8F01

    MAR 703 MOSFET TRANSISTOR

    Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346

    RD70HVF1

    Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet

    RD15HVF1-101

    Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d

    SA00167

    Abstract: diode SMD MARKING CODE d6 marking code DN SMD
    Text: INTEGRATED CIRCUITS 74ABT534A Octal D-type flip-flop, inverting 3-State Product specification IC23 Data Handbook Philips Semiconductors 1997 Feb 03 Philips Semiconductors Product specification Octal D-type flip-flop, inverting (3-State) FEATURES 74ABT534A


    Original     		PDF 74ABT534A 74ABT534A 500mA 01-Jan-98) SA00167 diode SMD MARKING CODE d6 marking code DN SMD

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501

    TPCP8F01

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive


    Original     		PDF TPCP8F01 TPCP8F01

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.


    Original     		PDF RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMF1-101

    Untitled

    Abstract: No abstract text available
    Text: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code


    OCR Scan     		PDF VP2106 VP2110 VP2106N3 O-236AB* VP2110K1 VP2106ND VP2110ND OT-23: -100V VP2106/VP2110

    2SK3399

    Abstract: K3399 HC marking
    Text: TOSHIBA 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type jc-MOSV TE N TA TIVE 2SK3399 Switching Regulator Applications • • • • Unit in mm Low drain-source ON resistance? RDS (ON) = 0.54 iî (typ) High forward transfer admittance? lYfel = 5.2 S (typ)


    OCR Scan     		PDF 2SK3399 2SK3399 K3399 HC marking