Untitled
Abstract: No abstract text available
Text: APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT6017B2LL
APT6017LLL
O-264
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT6017B2FLL APT6017LFLL 600V 35A 0.170W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT6017B2FLL
APT6017LFLL
O-264
O-264
O-247
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PDF
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XP151A03A7MR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.17Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-23 Package
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NSOT-23
XP151A03A7MR
OT-23
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Untitled
Abstract: No abstract text available
Text: APT6017JLL 600V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT6017JLL
OT-227
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Untitled
Abstract: No abstract text available
Text: APT6017JLL 600V 31A POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT6017JLL
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Untitled
Abstract: No abstract text available
Text: APT6017JFLL 600V 31A 0.170W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT6017JFLL
OT-227
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electrical circuit diagram reverse forward move d
Abstract: H24 SMD DIODE
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
electrical circuit diagram reverse forward move d
H24 SMD DIODE
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H24 SMD DIODE
Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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Original
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BDD20101213
H24 SMD DIODE
electrical circuit diagram reverse forward move d
12v bulb 220 supply diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet 1.0MHz, 3.5A, Synchronous Step Down DC-DC Converter General Description Features The AP3435 is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized by peak-current mode architecture with built-in synchronous power MOS switchers. The oscillator
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AP3435
AP3435
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mos 8580
Abstract: 87-3.3
Text: Voltage Controlled Oscillator Typical Performance Data MOS-868-119+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00
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MOS-868-119+
mos 8580
87-3.3
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Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillator Typical Performance Data MOS-828-219+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 0.50 0.80 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.80 5.00 5.25 5.50 5.75 6.00 6.25
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MOS-828-219+
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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OCR Scan
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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PDF
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Untitled
Abstract: No abstract text available
Text: PF0011 b lE ]> p o ia n a T33 • h it i4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 890-915 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching
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OCR Scan
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PF0011
20sec
0D13bGD
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PDF
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TEA2262
Abstract: No abstract text available
Text: r = 7 SGS-THOMSON liìiflDÈ[S [l[Li gTFK©liì!lD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI
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OCR Scan
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TEA2262
TEA2262
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PDF
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vk200* FERROXCUBE
Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range
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OCR Scan
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MRF137
vk200* FERROXCUBE
3950K
MOTOROLA TRANSISTOR 974
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PDF
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N 821 Diode
Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822
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IRF820
IRF820FI
IRF821
IRF821FI
IRF822
IRF822FI
IRF823
IRF823FI
820/FI-821/FI
822/FI-823/FI
N 821 Diode
transistor IRF 450
821 transistor
ON 823
D 823 transistor
transistor D 822
irf transistor
822FI
SC-0241
tr 821
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PDF
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D 823 transistor
Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
Text: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI
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OCR Scan
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820/FI-821/FI
822/FI-823/FI
IRF820
IRF820FI
IRF821
IRF821FI
IRF822
IRF822FI
IRF823
IRF823FI
D 823 transistor
transistor IRF 450
821 transistor
transistor D 822 P
irf transistors
transistor irf 500
transistor D 822
ON 823
823FI
irf822f
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PDF
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TEA2262
Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Text: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI TATION DOUBLE PULSE SUPPRESSION
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OCR Scan
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TEA2262
TEA2262
SMPS Transformer Symbol
circuit diagram of high power smps
SMPS Transformer 12V
mos power 823
TEA5170
smps circuit diagrams
MASTER-SLAVE SMPS FOR TV
hf amplifier for transformer
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PDF
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svi 2003
Abstract: 915MH svi 2003 a PF0011 S85M 915m1 885Mhz 915p Hitachi Scans-001
Text: blE D PF0011 M^baOS 00135cia T33 • H I T M HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POW ER MOS F E T MODULE UHF Band 890-915 MHz ■ FEATURES # Include Input and Output Matching Circuit # Easy to Control Output Power # Superior to Stability at Load Mismatching
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OCR Scan
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885MF
885MHz
915MH
915MHz
915M1
885MI-/
D013bQD
-PF0011
svi 2003
svi 2003 a
PF0011
S85M
915p
Hitachi Scans-001
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PDF
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ELM13401CA
Abstract: ELM13401EA ELM13400CA SOT-26 ci FET MARKING MO sot-23 ELM13401AA E1101 SOT-23 00A ELM13401 marking za mos
Text: ELM13400XÄ N-Channel Enhancement Mode Power MOS FET • GENERAL DESCRIPTION ELM13400xA Series uses advanced trench technology to provide excellent Riwom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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ELM13400XA
ELMI3400xA
OT-23,
OT-26
28mi2.
ELM13400xA
OT-23
ELM13401CA
ELM13401EA
ELM13400CA
SOT-26 ci
FET MARKING MO sot-23
ELM13401AA
E1101
SOT-23 00A
ELM13401
marking za mos
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PDF
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI
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OCR Scan
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TEA2262
DIP16
TEA2262
7T2T237
0D5fiT53
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PDF
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IC-3190
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ///PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jiPD42S16800, 4216800, 42S17800, 4217800 are 2,097.152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
jiPD42S16800,
42S17800,
iuPD42Sl6800
42S17800
28-pin
IC-3190
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PDF
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MN3802
Abstract: mn3811k MN3802A MN3801 MN3830S mn3811 MN3725 mn3810 MN3823S 318MHZ
Text: MOS LSIs • CCD Delay Line Series 1 Type No. Category N M S Supply voltage (12V) Quasi-single power supply 5V, (9V) c s Low EMI Low clock noise Supply voltage 5V,9V Clock Multiplier Package No. Auto-bias 6.0MHz 400mVp-p built-in 5V 200mW 6V O.OlmW 1H -
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OCR Scan
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200mW
300mW
150mW
5V220mW
5V30mW
5V55mW
MN3104
9V90mW
125mW
MN3802
mn3811k
MN3802A
MN3801
MN3830S
mn3811
MN3725
mn3810
MN3823S
318MHZ
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PDF
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20N06
Abstract: No abstract text available
Text: SGS-THOMSON STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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STP20N06
STP20N06FI
STP20N
O-220
ISOWATT220
STP20N06/FI
GC20180
20N06
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PDF
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