N mosfet 250v 600A
Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •
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QJQ0220001
FS40SM-5
N mosfet 250v 600A
mosfet 200A
mosfet 600V 100A
mosfet 600v
"MOSFET Module"
mosfet 100a 600v
3150 mosfet
QJQ0220001
mosfet low idss
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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UTT200N03
UTT200N03
UTT200N03L-TA3-T
UTT200N03G-TA3-T
UTT200N03L-TQ2-T
UTT200N03G-TQ2-T
UTT200N03L-TQ2-R
UTT200N03G-TQ2-R
QW-R502-758
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.
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UTT200N03
UTT200N03
O-220
UTT200N03L-TA3-T
UTT200N03G-TA3-T
QW-R502-758
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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FDA70N20
Abstract: No abstract text available
Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA70N20
FDA70N20
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IRFM054
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
IRFM054
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fdd7n25
Abstract: fdd7n25lz
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
FDD7N25LZ
fdd7n25
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Untitled
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91543B
IRFN054
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
IRFN054
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Untitled
Abstract: No abstract text available
Text: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90709B
O-254AA)
IRFM054
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP26N40
FDP26N40
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Untitled
Abstract: No abstract text available
Text: FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP75N08A
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Untitled
Abstract: No abstract text available
Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state
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FDP8N50NZU
FDPF8N50NZU
50nsec
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Mosfet application note fairchild
Abstract: No abstract text available
Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Features Description • RDS on = 1.38 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD5N50NZ
FDD5N50NZ
Mosfet application note fairchild
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FDD4N60NZ
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD4N60NZ
FDD4N60NZ
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dpak mosfet
Abstract: FDD3N50NZ
Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Features Description • RDS on = 2.1 (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD3N50NZ
FDD3N50NZ
dpak mosfet
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FDT3N40
Abstract: No abstract text available
Text: FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description • RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDT3N40
FDT3N40
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Untitled
Abstract: No abstract text available
Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA16N50
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FDPF3N50NZ
Abstract: No abstract text available
Text: FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5 Features Description • RDS on = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDPF3N50NZ
FDPF3N50NZ
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Untitled
Abstract: No abstract text available
Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDPF4N60NZ
FDPF4N60NZ
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Untitled
Abstract: No abstract text available
Text: FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features Description • RDS on = 550 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB12N50TM
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Abstract: No abstract text available
Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP80N06
145pF)
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TESTO10
Abstract: No abstract text available
Text: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDPF14N30
FDPF14N30
TESTO10
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