9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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FDD6676S
Abstract: FDS6676S
Text: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676S
FDS6676S
FDD6676S
O-252
O-252)
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Untitled
Abstract: No abstract text available
Text: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676S
FDS6676S
FDD6676S
O-252
O-252)
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FDD6644
Abstract: FDD6644S
Text: FDD6644S 30V N-Channel PowerTrench MOSFET General Description Features The FDD6644S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6644S
FDD6644S
O-252
O-252)
FDD6644
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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60V 60A TO-252
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTD3055 Preliminary Power MOSFET POWER MOSFET 12 AMPS, 60 VOLTS N–CHANNEL DPAK DESCRIPTION The UTC UTD3055 is an N-channel Power MOSFET, and it can withstand high energy in the avalanche and commutation modes. The UTC UTD3055 is needed for applications, such as power
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UTD3055
UTD3055
QW-R502-460
60V 60A TO-252
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fdd7n25
Abstract: fdd7n25lz
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 m Description Features UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD7N25LZ
FDD7N25LZ
fdd7n25
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Untitled
Abstract: No abstract text available
Text: FDD6N25 N-Channel UniFETTM MOSFET 200 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD6N25
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Untitled
Abstract: No abstract text available
Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD5N60NZ
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Mosfet application note fairchild
Abstract: No abstract text available
Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Features Description • RDS on = 1.38 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD5N50NZ
FDD5N50NZ
Mosfet application note fairchild
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FDD4N60NZ
Abstract: No abstract text available
Text: FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.7 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD4N60NZ
FDD4N60NZ
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dpak mosfet
Abstract: FDD3N50NZ
Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Features Description • RDS on = 2.1 (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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FDD3N50NZ
FDD3N50NZ
dpak mosfet
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Untitled
Abstract: No abstract text available
Text: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features Description • RDS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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Abstract: No abstract text available
Text: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD5N50
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Untitled
Abstract: No abstract text available
Text: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD6N25
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Untitled
Abstract: No abstract text available
Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features Description • RDS on = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD3N50NZ
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Untitled
Abstract: No abstract text available
Text: FDD3N40 / FDU3N40 N-Channel UniFETTM MOSFET 400 V, 2 A, 3.4 Ω Features Description • RDS on = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD3N40
FDU3N40
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FDD8N50NZTM
Abstract: No abstract text available
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features Description • RDS on = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD8N50NZ
FDD8N50NZTM
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Abstract: No abstract text available
Text: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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Untitled
Abstract: No abstract text available
Text: FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 mΩ Features Description • RDS on = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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Abstract: No abstract text available
Text: FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description • RDS on = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD6N25TM
Abstract: No abstract text available
Text: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Features Description • RDS on = 1.1 (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD6N25
FDD6N25
FDD6N25TM
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Abstract: No abstract text available
Text: FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS on = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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