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    MPSA65 Price and Stock

    onsemi MPSA65

    TRANS PNP DARL 30V 1.2A TO92-3
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    Avnet Americas MPSA65 Box 2,500
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    Central Semiconductor Corp MPSA65

    TRANS PNP DARL 30V 0.5A TO92-3
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    onsemi MPSA65_D26Z

    TRANS PNP DARL 30V 1.2A TO92-3
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    onsemi MPSA65_D27Z

    TRANS PNP DARL 30V 1.2A TO92-3
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    onsemi MPSA65_D75Z

    TRANS PNP DARL 30V 1.2A TO92-3
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    DigiKey MPSA65_D75Z Ammo Pack 2,000
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    MPSA65 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPSA65 Central Semiconductor Small Signal Transistors Original PDF
    MPSA65 Fairchild Semiconductor PNP Darlington Transistor Original PDF
    MPSA65 Fairchild Semiconductor PNP Darlington Transistor Original PDF
    MPSA65 Central Semiconductor PNP SILICON DARLINGTON TRANSISTORS Scan PDF
    MPS-A65 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    MPSA65 Crimson Semiconductor Transistor Selection Guide Scan PDF
    MPSA65 Fairchild Semiconductor PNP Darlington Transistor Scan PDF
    MPSA65 General Electric Semiconductor Data Handbook 1977 Scan PDF
    MPS-A65 General Electric Semiconductor Data Handbook 1977 Scan PDF
    MPS-A65 General Electric Planar passivated epitaxial PNP silicon Darlington transistor. -30V, -300mA. Scan PDF
    MPSA65 Micro Electronics SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS Scan PDF
    MPSA65 Micro Electronics Semiconductor Device Data Book Scan PDF
    MPS-A65 Micro Electronics SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS Scan PDF
    MPS-A65 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MPSA65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MPSA65 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MPSA65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPSA65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MPS-A65 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPS-A65 Unknown Cross Reference Datasheet Scan PDF

    MPSA65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MPSA65

    Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
    Text: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.


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    MPSA65 MMBTA65 PZTA65 OT-23 OT-223 MPSA64 MPSA65 MMBTA65 MPS-A65 PZTA65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


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    2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.


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    MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 MPSA62 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSA65 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30â V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50k


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    MPSA65 Freq100M PDF

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


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    MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    MPSA66

    Abstract: MPSA63 MPSA62 MPSA64 MPSA65
    Text: Data Sheet MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 Central Sem iconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 PNP SILICON DARLINGTON TRANSISTORS JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors


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    MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 MPSA63 MPSA65 MPSA66 PDF

    BTA65

    Abstract: PSA65
    Text: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS


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    MPSA65 MMBTA65 PZTA65 MPSA65 MMBTA65 PSA64 BTA65 PSA65 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP Transistors * / % D isc re te P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor" P N P D arlin g to n T ra n s is to rs V CBO vV CES v EBO *CBO Case Style MPSA63 TO-92 92 30 0.1 30 MPSA64 TO-92 (92) 30 0.1 MPSA65 TO-92 (92) 30 0.1 (V)


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    MPSA63 MPSA64 MPSA65 D43C8 O-202 D45C8 O-220 D45C10 D45H8 PDF

    FAIRCHILD SOT-223 MARK

    Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
    Text: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.


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    MPSA65 MMBTA65 OT-23 PZTA65 OT-223 MPSA64 FAIRCHILD SOT-223 MARK MMBTA65 MPSA65 PZTA65 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings


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    MPSA65 MMBTA65 PZTA65 MPSA64 MPSA65 MMBTA65 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    603 transistor npn

    Abstract: BT 316 transistor
    Text: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —


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    DSDH33Ã Q00bS17 D40D11 THC40D11 D41D11 THC41D11 0S0433fl 05D433fl 603 transistor npn BT 316 transistor PDF

    2N4123 pnp silicon

    Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520 PDF

    MPS-A68

    Abstract: mpsa66 MPSA68 MPS-A65 mpsa65 MPS-A66
    Text: MPS-A65 MPS-A66 SILICON PNP S IL IC O N D A R L IN G T O N T R A N S IS T O R S PNP S IL IC O N D A R L IN G T O N A M P L IF IE R T R A N S IS T O R S . . . designed fo r pre-am plifier in p u t a pplicatio n s requ irin g high inp ut impedance. H ig h D C C urren t G a in ~


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    MPS-A65 MPS-A66 MPS-A65) MPS-A66) MPS-A68 mpsa66 MPSA68 MPS-A65 mpsa65 MPS-A66 PDF

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


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    2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    Untitled

    Abstract: No abstract text available
    Text: G E SOLI» STATE 01 3875081 G E SOLID DE~| 3075001 0G17T=ia S STATE 01E 17992 Signal Transistors- D T ' i i - n MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M PS-A 65 is a planar epitaxial passivated PN P silicon Darlington transistor designed for pream plifier input


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    0G17T MPS-A65 750fil MPS-A65 -4J575 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    mpsa14

    Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
    Text: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)


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    MPS-A131 MPS-A14 MPS-A65, MPS-A66 T0-92A MPS-A65 mps-a14 kps-a66 1500c 100mA mpsa14 MPS-A13 pnp MPSA65 Xl03 mpsa66 MPS-A13 MPS-A66 PDF

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF