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    MRF9060 EQUIVALENT Search Results

    MRF9060 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MRF9060 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9060LR1

    Abstract: INF 740 MARKING WB1 MRF9060 MRF9060LSR1 MRF9060S
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 INF 740 MARKING WB1 MRF9060 MRF9060LSR1 MRF9060S

    MRF9060L

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060/D MRF9060L

    MARKING WB1

    Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060 MRF9060LR1 MARKING WB1 ATC100B0R5BT500XT ATC100B470JT500XT MRF9060LR1 MRF9060S T491D106K035AT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1

    RF-35-0300

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S marking wb1 MRF9060L
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S marking wb1 MRF9060L

    100B0R5BP

    Abstract: MRF9060L
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 100B0R5BP MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 MRF9060/D

    MRF9060

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 MRF9060 MRF9060LSR1 MRF9060S 9600MHz

    RF-35-0300

    Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L

    93F2975

    Abstract: Motorola 305
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305

    MRF9060

    Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent

    93F2975

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975

    motorola MOSFET 935

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060 MRF9060LSR1 MRF9060S

    93F2975

    Abstract: MRF9060 MRF9060S MRF9060SR1
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 MRF9060 MRF9060S 93F2975 MRF9060SR1

    945 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF Charact30 MRF9060 MRF9060S MRF9060SR1 945 mosfet

    transistor 6c x

    Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF9060 MRF9060S MRF9060Sal MRF9060 MRF9060S MRF9060SR1 RDMRF9060NCDMA transistor 6c x MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060SR1

    MARKING WB1

    Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060LSR1 MRF9060 MARKING WB1 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060LSR1 MRF9060S T491D106K035AT

    MRF9060L

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060LR1 MRF9060LSR1 MRF9060L

    93F2975

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060R1 MRF9060LSR1 93F2975

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    LDV75M

    Abstract: LDV75M-R LDMOS 15w MRF9060 ldmos
    Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal


    Original     		PDF LDV75M-R 75Wps 50Wps 15Wrms MRF9060 120x78x30 GR00267 LDV75M LDV75M-R LDMOS 15w ldmos

    ldu45

    Abstract: power 470-860mhz w MRF9060 MRF9060 equivalent
    Text: LDU45 45W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •


    Original     		PDF LDU45 MRF9060 136x78x20mm GR00165 ldu45 power 470-860mhz w MRF9060 equivalent

    ldu45

    Abstract: MRF9060 MRF9060 equivalent ldmos
    Text: LDU45-R 45W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •


    Original     		PDF LDU45-R MRF9060 136x78x20mm GR00165 ldu45 MRF9060 equivalent ldmos

    dvb-t transmitters

    Abstract: MRF9060 LDMOS 15w Res-Ingenium
    Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal


    Original     		PDF LDV75M-R 75Wps 50Wps 15Wrms MRF9060 120x78x30 GR00267 dvb-t transmitters LDMOS 15w Res-Ingenium