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    MT4C4001JDJ Price and Stock

    Micron Technology Inc MT4C4001JDJ6

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    Micron Technology Inc MT4C4001JDJ-6

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    MT4C4001JDJ-6 36
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    NexGen Digital MT4C4001JDJ-6 73
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    Micron Technology Inc MT4C4001JDJ-7

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    Microchip Technology Inc MT4C4001JDJ-6

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    MT4C4001JDJ-6 3
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    MT4C4001JDJ Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT4C4001JDJ-6 Micron 1 MEG x 4 FPM DRAM Original PDF
    MT4C4001JDJ-6 Micron 1M x 4 DRAM fast page mode, 60ns Scan PDF
    MT4C4001JDJ-6IT Micron 1M x 4 DRAM fast page mode, 60ns Scan PDF
    MT4C4001JDJ-6L Micron 1 MEG x 4 FPM DRAM Original PDF
    MT4C4001JDJ-6L Micron 1M x 4 DRAM extended refresh, 60ns, low power Scan PDF
    MT4C4001JDJ-6S Micron 1M x 4 DRAM self refresh, 60ns Scan PDF
    MT4C4001JDJ-7 Micron 1M x 4 DRAM fast page mode, 70ns Scan PDF
    MT4C4001JDJ-7IT Micron 1M x 4 DRAM fast page mode, 70ns Scan PDF
    MT4C4001JDJ-7L Micron 1M x 4 DRAM extended refresh, 70ns, low power Scan PDF
    MT4C4001JDJ-7S Micron 1M x 4 DRAM self refresh, 70ns Scan PDF
    MT4C4001JDJ-8 Micron 1M x 4 DRAM fast page mode, 80ns Scan PDF
    MT4C4001JDJ-8IT Micron 1M x 4 DRAM fast page mode, 80ns Scan PDF
    MT4C4001JDJ-8L Micron 1M x 4 DRAM extended refresh, 80ns, low power Scan PDF
    MT4C4001JDJ-8S Micron 1M x 4 DRAM self refresh, 80ns Scan PDF

    MT4C4001JDJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |IC=RO N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible


    OCR Scan     		MT18D236 72-pin 052mW 024-cycle 72-Pin T18D236M MT180236 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT6D118 1 MEG X 18 DRAM MODULE M IC R O N 1 MEG X 18 DRAM FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply • All device pins are fully TTL compatible


    OCR Scan     		MT6D118 72-pin 250mW 024-cycle MT60118 PDF

    MT18D236

    Abstract: No abstract text available
    Text: |U|K=RON 2 MEG DRAM MODULE 2 MEG X MT18D236 36 DRAM MODULE X 36 DRAM FAST-PAGE-MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are TTL-compatible


    OCR Scan     		MT18D236 72-pin 052mW 024-cycle 72-Pin DE-12) MT18D236G-6 CYCLE20 MT18D236 PDF

    Untitled

    Abstract: No abstract text available
    Text: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line


    OCR Scan     		MT2D18 MT2D18) MT2D18 30-pin, 450mW 024-cycle 128ms PDF

    MT4C4001

    Abstract: No abstract text available
    Text: MT20D240 2 MEG X 40 DRAM M ODULE p iC R O fS J 2 MEG X 40 DRAM DRAM MODULE NEW I FAST PAGE MODE MT20D240 LOW POWER, EXTENDED REFRESH (MT20D240 L) FEATURES • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance CM OS silicon-gate process.


    OCR Scan     		MT20D240 72-pin 024-cycle 128ms MT20D240) MT4C4001 PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |IC R O N lEG X 1 MEG DRAM MODULE MT6D118 18 DRAM MODULE X 18 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		MT6D118 72-pin 024-cycle DE-15) T6D118G MT60118 PDF

    T3D19

    Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
    Text: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process


    OCR Scan     		MT3D19 30-pin 625mW 024-cycle 128ms MT3D19) T3D19 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM PDF

    MT18D236

    Abstract: No abstract text available
    Text: [MICRON 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM FAST-PAGE-MODE FEATURES PIN A SSIG N M EN T Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process. • Single 5V ±10% power supply


    OCR Scan     		MT18D236 72-pin 024-cycle DE-12) PDF

    t3d19

    Abstract: MT4C1024DJ a7020
    Text: [MICRON □PAM _ _ _ _ . . _ 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM _ FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (M T3D19 L) MODULE \J L. t . IVIv y U FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 30-pin single-in-line


    OCR Scan     		MT3D19 MT3D19) T3D19 30-pin 625mW 024-cycle 128ms 600nA MT4C1024DJ a7020 PDF

    FPM DRAM 30-pin SIMM

    Abstract: T2D18
    Text: I^ IIC n D N lEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory m odule SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply


    OCR Scan     		MT2D18 30-pin, 024-cycle 30-Pin FPM DRAM 30-pin SIMM T2D18 PDF

    MT4C4007JDJ

    Abstract: ST bsx 26
    Text: MTHat3Z XI(SFr MTt6D222(XJ (S | t M B G *ZM EE jc3ZDRÄIW1 M O D ULE DRAM 1 MEG, 2 MEG x 32 M UW D U L tr - 4, 8 MEGABYTE, 5V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MOPE FEATURES • JE D E C - a n d i n d u s tr y - s ta n d a r d pinout in a 72-pin,


    OCR Scan     		MTt6D222 72-pin, 23ZIX MT4C4007JDJ ST bsx 26 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICR ON S E M I C O N D U C T O R INC b3E D • b l l l S M T D D D V bb ? 51b ■ MRN MT4C4004J 1 MEG x 4 DRAM I^HCRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST-PAGE-MODE FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual


    OCR Scan     		MT4C4004J 36bit 275mW A1993, T4C4001JDJ T4C4004JDJ PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICRON SEM ICONDUCTOR INC b3E D M IC R O N WÊ b lllS M T 1 MEG X 0 G D 7 cì b G b O 1» « P I R N MT3D19 9 DRAM MODULE 1 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line


    OCR Scan     		MT3D19 MT3D19) MT3D19 30-pin 625mW 024-cycle CYCLE20 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON □ P A 2 MEG M M 2 _ M T16D 232 32, 4 MEG x 16 DRAM M O D ULE X E G x 3 2 > M 4 E G x 1 6 FAST PAGE MODE (MT16D232 LOW POWER, FXTFNDFD EXTENDED RF REFRESH (MT16D232 L) M O D U LE I V I V / U U L .I— FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM


    OCR Scan     		MT16D232) MT16D232 72-Pin MT16D232M/G MT16D232 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C4001 J L 1 MEG X 4 DRAM (M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 275mW 20-Pin PDF

    T2D19

    Abstract: No abstract text available
    Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM


    OCR Scan     		MT2D18 30-pin MT2D18M-6 DG113SQ T2D19 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C4004J 1 MEG X 4 DRAM |U|IC=RON DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data input/output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory


    OCR Scan     		MT4C4004J 36bit 275mW 024-cycle 24-Pin MT4C4001JDJ MT4C4004JDJ T4C4001JDJ PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C4001 J S 1 MEG X 4 DRAM (MICRON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process


    OCR Scan     		MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin 001217T PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N I DRAM . « . Ä MT24D236 2 MEG X 36, 4 MEG X 18 DRAM MODULE 2 MEG x 36>4 MEG x 18 « FAST PAGE MODE MT24D236 LOW POWER, P EXTENDED Y T P M n p n R REFRESH F (MT24D236 L) MODULE I V I v U v L L FEATURES • Industry-standard pinout in a 72-pin single-in-line


    OCR Scan     		MT24D236 MT24D236) MT24D236 72-pin 024-cycle MT240236 PDF

    T3D19

    Abstract: No abstract text available
    Text: |V|IC =R O N 1 MEG DRAM MODULE 1 MEG X X M T3D19 9 DRAM M O D ULE 9 DRAM FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process


    OCR Scan     		T3D19 MT3D19) MT3D19 30-pin 625mW 024-cycle 128ms MT3D19 T3D19 PDF

    T2D18

    Abstract: No abstract text available
    Text: I^ IIC R O IS I 1 MEG 1 MEG DRAM MODULE X X MT2D18 8 DRAM M ODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply • Low power, 6mW standby; 450mW active, typical


    OCR Scan     		MT2D18 30-pin, 450mW 024-cycle 30-Pin MT2018 T2D18 PDF

    MT18D236G6

    Abstract: No abstract text available
    Text: l^ iic n o N 2 MEG X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible


    OCR Scan     		MT18D236 72-pin 052mW 024-cycle 18D236M MT180236 MT18D236G6 PDF

    T4C400

    Abstract: mt4c4004jdj
    Text: M T4C4004J 1 MEG X 4 DRAM l^ldRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES _ • Four independent C A S controls, allo w ing in d ivid u al m anipulation to each of the four data In p u t/O u tp ut ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words w hen using 1 M eg x 4 D R A M s for m emory


    OCR Scan     		T4C4004J 36bit 225mW 024-cycle MT4C4001JDJ MT4C4004JDJ MT4C4004J MT4C40040 T4C400 mt4c4004jdj PDF

    marking JE 6 pin

    Abstract: No abstract text available
    Text: [MICRON 1 MEG DRAM MODULE X 1 MEG MT6D118 18 DRAM MODULE X 18 DRAM NEW I FAST PAGE MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 72-Pin SIMM (T-16) M T 6 D 1 1 8 M /G MARKING • Timing 60ns access 70ns access 80ns access 6 - 7 - Packages Leadless 7 2 -pin SIMM


    OCR Scan     		MT6D118 72-pin 024-cycle MT60116 MT6D116 Cl992. marking JE 6 pin PDF