2N4092
Abstract: No abstract text available
Text: 2N4092 N-CHANNEL J-FET Qualified Per MIL-PRF-19500/431 2.79 T. 1 of 1 Home Part Number: 2N4092 Online Store 2N4092 Diodes N- C HANNEL J - F ET Q ualified Per M IL- PRF - 1 9 5 0 0 / 4 3 1 Transistors
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2N4092
MIL-PRF-19500/431
com/2n4092
2N4092
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2N4093
Abstract: No abstract text available
Text: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors
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Original
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2N4093
MIL-PRF-19500/431
com/2n4093
2N4093
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2SK125
Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
Text: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise
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OCR Scan
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2SK125
2SK125
23fl3
Q0030b3
T-29-25
100MHz
100MHz
FET 2SK125
y-parameter
2SK125 sony
2sk125 equivalent
2SK12S
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PDF
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MPS 0715
Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
Text: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR
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MPQ2001/D
MPQ2001
2N2222
2N5358
MPQ2001/D
MPS 0715
2N5358
10MF
2N2222
MPQ2001
FET small signal transistors motorola
2N2222 npn small signal current gain
2N2222 transistor
2n2222 mps
2N2222 motorola
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. D e scrip tio n /¿PC356 J-FET INPUT OPERATIONAL AMPLIFIER Pin C o n figu ratio n The juPC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the //PC356 is
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PC356
juPC356
//PC356
LF356
ATPC356
//PC356
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2SK1271
Abstract: TEA-1035 MEI-1202 TC-2380 24 V 20 A diode
Text: NEC J— r W DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1271 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters 03.2 ±0.2 DESCRIPTION The 2SK1271 is N-channel M O S Field Effect Transistor de signed fo r high voltage switching applications.
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OCR Scan
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2SK1271
IEI-1209)
TEA-103
TEA-1035
TEI-1202
MEI-1202
IEI-1207
TC-2380
24 V 20 A diode
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PDF
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PN4391
Abstract: PN4392 IEC134 PN4393 Vgsoff
Text: PN4391 to 4393 J V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA
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OCR Scan
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PN4391
PN4392
PN4393
bb53131
0035A3b
IEC134
PN4393
Vgsoff
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PDF
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Untitled
Abstract: No abstract text available
Text: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •
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SDF120
SDF120
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PDF
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BFW61
Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.
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OCR Scan
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BFW61
200/iA
BFW61
FET BFW61
N CHANNEL FET BFW61
transistor TO-72
727 Transistor power values
VDS-15
ad357
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PDF
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2N4393
Abstract: 2N4392 2N4391 transistor 4393
Text: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,
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OCR Scan
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2N4391
2N4392
2N4393
003537b
2N4393
transistor 4393
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PDF
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TC-2394
Abstract: transistor D 2394 nec 2501 PT-235 2SK1295 MEI-1202 TEA-1035 nec 2702
Text: DATA SHEET NEC J HMOS FIELD EFFECT POWER TRANSISTOR 2SK1295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1295 is N-channel MOS Field Effect Transistor de PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.
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OCR Scan
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2SK1295
2SK1295
IEI-1209)
TC-2394
transistor D 2394
nec 2501
PT-235
MEI-1202
TEA-1035
nec 2702
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PDF
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A2147
Abstract: 2sk109
Text: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce
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2SK1098-MR
5388-7SS7
A2147
2sk109
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Untitled
Abstract: No abstract text available
Text: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.
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OCR Scan
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7110flEb
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PDF
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SIPMOS
Abstract: 2SK1509
Text: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce
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2SK1509
03j6T
O-22QAB
SC-46
SIPMOS
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BFW61
Abstract: No abstract text available
Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA
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OCR Scan
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BFW61
btj53T31
357T2
BFW61
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PDF
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J112
Abstract: J113 J111 transistor J112 Scans-00946
Text: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features
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OCR Scan
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711002b
0Clb7cl75
3150S2
J112
J113
J111
transistor J112
Scans-00946
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PDF
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Untitled
Abstract: No abstract text available
Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)
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OCR Scan
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T0220
14-Pin
VQ2001J
VQ200IP
VQ2004J
T0236
TP0101T
TP0202T
TP06I0T
VP06I0T
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.
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OCR Scan
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2N4856
2N4858
2N4861
2N4857
2N4860
2N4856
2N4859
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PDF
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2SK1282
Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Text: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance
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OCR Scan
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2SK1282
1282-Z
2SK1282-Z
IEI-1209)
A 1282 transistor
TC-2381
MEI-1202
TEA-1035
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PDF
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BUK617-500AE
Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Text: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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OCR Scan
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7110a5t.
BUK617-500AE/BE
OT227B
BUK617
-500AE
BUK617-500AE
BUK617-500AE
TRANSISTOR C 557 B
TIC 136 Transistor
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PDF
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nec 7915
Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
Text: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to
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OCR Scan
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b427SSS
uPC356
M2752S
nec 7915
LF356 equivalent
L9810
7915 pin configuration
PC356
LF356
RS 7915
7915 nec
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PDF
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BUK582-100A
Abstract: 2T3 transistor
Text: PHILIPS INTERNATIONAL bSE J> • 711Ga2b G0b42û4 LSÔ « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode
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OCR Scan
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0Qb42flS
BUK582-100A
OT223
-ID/100
OT223.
2T3 transistor
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PDF
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2N4856
Abstract: 2N4858 2N4860 2N4857 2N48 2N4859 2N4861
Text: 2N4856 to 4861 J v _ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended fo r low power, chopper o r switching, applications in industrial service.
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OCR Scan
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2N4856
2N4858
2N485g
2N4861
2N4857
2N4859
2N4858
2N4860
2N48
2N4861
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PDF
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IMF6485
Abstract: TO71 fet
Text: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci fied noise parameters at 10 Hz and 1000 Hz. T ig h t match
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OCR Scan
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10nV/VHT@
40MV/Â
IMF6485
10sec.
IMF6485
TO71 fet
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PDF
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