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    N CHANNEL MOS FET 3 GHZ Search Results

    N CHANNEL MOS FET 3 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOS FET 3 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE5510379A

    Abstract: NE5510379A-T1
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5510379A NE5510379A NE5510379A-T1

    2sk135 application note

    Abstract: 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0017-0200/Rev 2sk135 application note 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as

    body contact FET soi RF switch

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
    Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises


    Original     		PDF

    NEC 09030

    Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
    Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are


    Original     		PDF NEM090303M-28 NEM090303M-28 PU10312EJ01V0DS NEC 09030 8712 RESISTOR ldmos nec

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


    Original     		PDF TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    NEM090603M-28

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station


    Original     		PDF NEM090603M-28 NEM090603M-28 PU10467EJ02V0DS

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original     		PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    NEM090853P-28

    Abstract: T-97M
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090853P-28 N-CHANNEL SILICON POWER LDMOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured


    Original     		PDF NEM090853P-28 NEM090853P-28 T-97M

    GaAs FET operating junction temperature

    Abstract: TRANSISTOR 318a mesfet datasheet by motorola MRF9811T1
    Text: MOTOROLA Order this document by MRF9811T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide MRF9811T1 N–Channel Depletion–Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.


    Original     		PDF MRF9811T1/D MRF9811T1 MRF9811T1 GaAs FET operating junction temperature TRANSISTOR 318a mesfet datasheet by motorola

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    NEM091803S-28

    Abstract: transistor NEC D 880 NEC JAPAN
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER DESCRIPTION The NEM091803S-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 0.8 to 1.0 GHz applications, such as, GSM/EDGE/N-CDMA cellular base station.


    Original     		PDF NEM091803S-28 NEM091803S-28 transistor NEC D 880 NEC JAPAN

    mobile rf power amplifier transistor

    Abstract: DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
    Text: New products New products MB39A102 Protection Circuit Functions Error Amplifier Block Error Amp The error amplifier is an amplifier that detects the DC/DC converter output voltage and outputs PWM control signals. Stable phase compensation against the system can be


    Original     		PDF MB39A102 23-bit mobile rf power amplifier transistor DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49

    NEM090603M-28

    Abstract: T-91M
    Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final


    Original     		PDF NEM090603M-28 NEM090603M-28 T-91M

    BF965

    Abstract: SOT103
    Text: b3E J> m b b S 3 c124 0 D 7 4 2 T :i GTÔ « S I C 3 BF965 A NAPC/PHILIPS SEMICOND FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in plastic X-package w ith source and substrate interconnected,


    OCR Scan     		PDF bbS3c124 D74BT BF965 BF965 SOT103

    transistor marking NO2

    Abstract: FET MARKING CODE BF997 mosfet depletion
    Text: i I b 3E D • b b S B S S 1! 007 4 3 1 2 3bl « S I C 3 BF997 NAPC/PHILIPS SEMICOND J l FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic S O T 143 m ic ro m in ia tu re envelope w ith source and


    OCR Scan     		PDF bb53S24 BF997 OT143 transistor marking NO2 FET MARKING CODE BF997 mosfet depletion

    PHILIPS MOSFET MARKING

    Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
    Text: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T


    OCR Scan     		PDF BF988 007M3Q5 BF988 05-max OT103. MBB087 PHILIPS MOSFET MARKING SOT103 n channel depletion MOSFET transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate

    Diode DII

    Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
    Text: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS


    OCR Scan     		PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2SK1845

    Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
    Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.


    OCR Scan     		PDF ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    2sk1058 equivalent

    Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
    Text: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS


    OCR Scan     		PDF