NE57835 Search Results

NE57835 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE57835		Unknown	TRANSISTOR \| BJT \| NPN \| 11V V(BR)CEO \| 30MA I(C) \| SOT-173		Scan	PDF
NE57835		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

NE57835 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR FEATURES • H IG H G A IN B A N D W ID T H P R O D U C T : f r - 6 G H z NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT • L O W N O IS E F IG U R E : 2 .5 d B at 2 G H z X CD • H IG H G A IN : 13 d B at 2 G H z	OCR Scan	NE57800 NE57835 IS12I J22li.	PDF
2SC2150 Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42 Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use	OCR Scan	bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NE57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 . RELIABILITY PROVEN IN SPACE:	OCR Scan	NE57800 NE57835 NE578 S22-S21 IS12I L427525	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318	PDF
NE88933 Abstract: ne85639 NFC46 NE57835 NE645 NE21935 NE64535 NE68033 NE68035 NE68039 Text: N E C / SbE CALIFORNIA D • t.427414 ODGEflMB Tbb HNECC RF and DC Specifications Low Noise Devices a lllfj \|3^ 1* #1 f II itti ft* iltasfc-S SSmiJe iSÉ-asfcl \| \| i \| \| \| I in a»iiSr# W =BP>8 AiS SiiSfK f a ll t i l l MAG ' CL Ic f SÈI««nW_e «gÿwfflHfea®»la V (mA) (GH/)	OCR Scan	NE21935 NE645 NE64535 Nh680 NL68030 NE416 NE41635 NE461 NE46134 NE46734 NE88933 ne85639 NFC46 NE57835 NE68033 NE68035 NE68039	PDF
2SC2150 Abstract: No abstract text available Text: NPN SILICON MICROWAVE TRANSISTOR NE57800 NÉ57835 GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 6 GHz 20 • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz 10 • RELIABILITY PROVEN IN SPACE:	OCR Scan	NE57800 NE578 lS22l 2SC2150	PDF
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan		PDF