NE64700 Search Results

NE64700 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE64700		Advanced Semiconductor	Transistor		Original	PDF
NE64700		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF

NE64700 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE64700 Abstract: 10 ghz transistor chip die npn transistor transistor 20 dB 14 ghz Text: NE64700 NPN SILICON MICROWAVE TRANSISTOR DESCRIPTION: PACKAGE STYLE: CHIP 0.0007 Inch Gold Wire CHIP The ASI NE64700 is a bipolar transistor Designed for low noise applications at VHF, UFH and microwave frequencies up to 12 GHz. EMITTER • PG = 18.1 dB Typical @ 1.0 GHz	Original	PDF	NE64700 NE64700 10 ghz transistor chip die npn transistor transistor 20 dB 14 ghz
NE4203B-20 Abstract: NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20 Text: - 316 - W ckÏÏtë m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE3005B—20 NE4201B-2Û NE4203B-20 NE64700 NE64800 NEL2301 NEL2302 NEL2303 NEM1706B—20 NEM1712B-20	OCR Scan	PDF	H82A4A PU1619 PU1620 PU3210 PU3110 PU3211 PU3111 PU3212 PU3112 PU3213 NE4203B-20 NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20
transistor k 265 Abstract: NE64700 Text: K-BAND BIPOLAR OSCILLATOR TRANSISTOR NE64700 OUTLINE DIMENSIONS Units in jun FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64700 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES Bonding Area ELECTRICAL CHARACTERISTICS ( t a - 25-cj	OCR Scan	PDF	NE64700 25-cj NE64700 IS12S21I transistor k 265
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
NE3005B-20 Abstract: M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20 Text: - 316 - m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q ft n Bn a Bn Bn sn Bn sn un sn a n Bn Bn NE3005B—20 am a B is fö T 8T F Hm a* BB NE4201B-2Û U M HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE4203B-20	OCR Scan	PDF	H82A4A 32dBm 27dBm NEL2302 34dBm 30dBm NEL2303 38dBm 65GHz NE3005B-20 M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	PDF	NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318