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    NE648 Search Results

    NE648 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE64800 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    NE64800 NEC K-Band Bipolar Oscillator Transistor Scan PDF
    NE648N Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE648N Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    NE648 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE649N

    Abstract: NE648N NE648 signetics dolby Dolby encoder ne649 audio circuit diagram
    Text: NE648/649 Signetics Low Voltage Dolby Noise Reduction Circuit Product Specification Linear Products DESCRIPTION PIN CONFIGURATION level in FM broadcast reception. The circuit is intended for use in automotive and portable cassette D olby B-Type noise reduction systems. This circuit is


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    PDF NE648/649 NE648 NE649 NE649N NE648N signetics dolby Dolby encoder audio circuit diagram

    NE4203B-20

    Abstract: NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20
    Text: - 316 - W ckÏÏtë m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE3005B—20 NE4201B-2Û NE4203B-20 NE64700 NE64800 NEL2301 NEL2302 NEL2303 NEM1706B—20 NEM1712B-20


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    PDF H82A4A PU1619 PU1620 PU3210 PU3110 PU3211 PU3111 PU3212 PU3112 PU3213 NE4203B-20 NE3005B-20 NTM2222A NTM3904 ntm3906 M181H M194H NE3001B-20 NE3003B-20 NE4201B-20

    ym 26500

    Abstract: No abstract text available
    Text: K-BAND BIPOLAR OSCILLATOR TRANSISTOR OUTLINE DIMENSIONS Units in nm FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64800 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES ÜH Bonding Area ELECTRICAL CHARACTERISTICS (t a - 2 5 - c >


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    PDF NE64800 NE64800 S22-S21 ym 26500

    NE64800

    Abstract: No abstract text available
    Text: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES


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    PDF b4S74m 0D02433 NE64800 NE64800

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    NE3005B-20

    Abstract: M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20
    Text: - 316 - m & HQ1A3M HQ1A4A HQ1F2Q HQ1F3M HQ1F3P HQ1L2N HQ1L2Q HQ2A4A HR1A3M HR1A4A HR1A4M HR1F2Q ft n Bn a Bn Bn sn Bn sn un sn a n Bn Bn NE3005B—20 am a B is fö T 8T F Hm a* BB NE4201B-2Û U M HR1F3P HR1L2Q HR1L3N M181H M194H NE3001B—20 NE3003B-20 NE4203B-20


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    PDF H82A4A 32dBm 27dBm NEL2302 34dBm 30dBm NEL2303 38dBm 65GHz NE3005B-20 M194H NE3005B20 NEM2010B-20 NEM2310B-20 15NO3 HQ2A4A M181H NE3001B-20 NE4201B-20

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


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    PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    la7376

    Abstract: STK5333 LB1807 LB1616 an6393 STK5352 LVA521 upc1473 TDA8501 m51316
    Text: VCR IC Data Files VCR IC Data Files John Edwards % Newnes OXFORD BOSTON JOHANNESBURG MELBOURNE NEW DELHI SINGAPORE Butterworth-Heinemann Linacre House, Jordan Hill, Oxford 0X2 8DP 225 Wildwood Avenue, Woburn, MA 01801-2041 A division of Reed Educational and Professional Publishing Ltd


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