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    NE74100 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    2SC1365

    Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
    Text: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz


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    b4274m 0G0547Ã NE74100 NE74113 NE74114 NE741 NE74100) NE74114 2SC1365 2SC1252 2SC*1365 PDF

    74113

    Abstract: NE741
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and V H F amplifiers. Us low distortion and noise figures make it an excellent choice for


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    NE74100 NE74113 NE74114 NE741 NE74100) IL-S-19500 NE74100, NE74113, NE74114 74113 PDF

    SN 74114

    Abstract: 2SC1365 ta 5732 2SC1252 s735 NE74113
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low distortion and noise figures make it an excellent choice for


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    NE74100 NE74113 NE74114 NE741 NE74100) NE74114 procedur64 4S7S25 00L573L SN 74114 2SC1365 ta 5732 2SC1252 s735 PDF

    2SC1365

    Abstract: NE741 2sc1252 74113 NE74100
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low


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    NE74100 NE74113 NE74114 NE741 E74100) NE74114 E74100, NE74100 2SC1365 2sc1252 74113 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


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    NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 PDF