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    NPN, TRANSISTOR, SC 109 B Search Results

    NPN, TRANSISTOR, SC 109 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    NPN, TRANSISTOR, SC 109 B Price and Stock

    TE Connectivity KUEP-11D15-48

    Power Relay 48VDC 10A DPDT(38.9x35.7x48.4)mm Socket
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KUEP-11D15-48 285
    • 1 $55.76
    • 10 $32.13
    • 100 $30.65
    • 1000 $30.34
    • 10000 $30.34
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    Winchester Interconnect 877-87-1

    Conn SMA F 0Hz to 12.4GHz 50Ohm Solder RA Thru-Hole Gold
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    Onlinecomponents.com 877-87-1 198
    • 1 $182.76
    • 10 $172.03
    • 100 $165.97
    • 1000 $165.97
    • 10000 $165.97
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    TE Connectivity PRD-5DY0-24

    Power Relay 24VDC 25A SPDT(63.3x63.75x57.9)mm Chassis Mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PRD-5DY0-24 125
    • 1 $52.88
    • 10 $49.75
    • 100 $43.2
    • 1000 $43.2
    • 10000 $43.2
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    TE Connectivity KR-14DGE-125

    General Purpose Relay - Hermetically Sealed - 3 Form C (3PDT) - Silver Cadmium Oxide Contact Material - 125 VDC 10k Ohms 12.5 mA Coil - Octal Type Plug - 11 Pin.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KR-14DGE-125 119
    • 1 $269
    • 10 $253
    • 100 $253
    • 1000 $253
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    TE Connectivity KHU-17D11N-110

    Power Relay 110VDC 11KOhm 5A 4PDT(21.82x28.17)mm Socket General Purpose Relay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KHU-17D11N-110 111
    • 1 $151.7
    • 10 $151.7
    • 100 $54.86
    • 1000 $54.86
    • 10000 $54.86
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    Find more NPN, TRANSISTOR, SC 109 B price and stock on Findchips.com

    NPN, TRANSISTOR, SC 109 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LMUN5311DW1T1G LMUN5311DW1T1G

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


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    bf433

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
    Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.


    OCR Scan     		PDF MRF681 bf433 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68

    gd 361 transistor

    Abstract: MOTOROLA 2N3902 2N3902
    Text: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching


    OCR Scan     		PDF 2N3902 gd 361 transistor MOTOROLA 2N3902 2N3902

    TRANSISTOR BC 137

    Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
    Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.


    OCR Scan     		PDF 023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

    BUV 12

    Abstract: buv12
    Text: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.


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    MMBR930

    Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,


    OCR Scan     		PDF DQ141S1 2N6604 Symbo73 MMBR930 tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063

    c 3198 transistor

    Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
    Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed


    OCR Scan     		PDF ----2N6384 2N6385 c 3198 transistor 2N6383 IC 6648 2N6648 sc 3198 transistor

    2n5875 motorola

    Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
    Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF 2N5875, 2N5876 2N5877, 2N5878 2n5875 motorola 2N5878 2N5875 2N5877 2N5875 2N5876

    TZ 1167

    Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
    Text: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection


    OCR Scan     		PDF b3b75SM TZ 1167 bu208D U/25/20/TN26/15/850/TZ 1167

    bu323

    Abstract: bu323a
    Text: M O T O R O L A SC 1EE 0 I XSTRS/R F & | b3fc,7554 0 0 0 4 0 0 0 MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA 16 AMPERE PEAK NPN SILICON POWER DARLINGTON TRANSISTOR The B U 3 2 3 , B U 3 2 3 A are m o no lith ic darlington transistors designed fo r a u to m otive ignition, sw itch in g regulator and m o to r


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    THT bsc 25

    Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
    Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS


    OCR Scan     		PDF BUT15 THT bsc 25 but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode

    J4032

    Abstract: J4033 MOTOROLA MJ4035 J4031 J4030 9BSC MJ4033
    Text: I>F| b3L.725M OOfiGTDD 3 MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC CX S TR S /R F 96D 8 09 00 T-J3~?3 PNP MOTOROLA MJ4030 MJ4031 MJ4032 SEMICONDUCTOR TECHNICAL DATA MJ4033 MJ4034 MJ4035 16 A M P E R E M ED IUM -POW ER C O M P L E M E N T A R Y S IL IC O N T R A N S IS T O R S


    OCR Scan     		PDF MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 J4032 J4033 MOTOROLA MJ4035 J4031 J4030 9BSC

    transistor c 3228

    Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa
    Text: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T | - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS


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    MJE2901

    Abstract: mje2801 TO-225AB
    Text: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF MJE2801, MJE2801T MJE2901 35-Watts O-225AB JWJE2801T O-220AB MJE2801/MJE2801T MJE2901 mje2801 TO-225AB

    2N5760

    Abstract: 2N5758
    Text: MO T OR OL A SC 12E D | b3b?2S4 -QOflMSbl S I X S TR S/ R F MOTOROLA 7V33-/S' 2N5758 2N5760 SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE HIGH-POWER SILICO N TRANSISTORS 6 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in high power audio amplifier applications and


    OCR Scan     		PDF 7V33-/S' 2N5758 2N5760 2N5758 2N5758, 2N5760

    BU206

    Abstract: BU205
    Text: Dlf|b3b7S54 □□flObbO T [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC XSTRS/R F 96D 80660 D T - 3 S - MOTOROLA If BU204 BU205 SEMICONDUCTOR TECHNICAL DATA ; ÄiSül ) ( ».*•>i g i i <»i •.*-» *1 > í » t á : i 8 l H H ' t , 2JS AM PERE NPN SILICON


    OCR Scan     		PDF b3b7S54 BU204 BU205 --BU204 --BU205 BU206 BU205

    npn pnp transistor bipolar cross reference

    Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
    Text: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l


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    Motorola ic

    Abstract: 2N6543 300 volt 5 ampere transistor a 31
    Text: MOTORCL A SC XST RS/ R F 12E D I b3b?2SM 00ä4bfc.a 7 | MOTOROLA SEMICONDUCTOR 2N6543 TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS SW ITCHM ODE S E R IE S NPN SIL IC O N POWER T R A N SIST O R S


    OCR Scan     		PDF 2N6543 Motorola ic 2N6543 300 volt 5 ampere transistor a 31

    2N5629 MOTOROLA

    Abstract: 2N5629 2n6029 2N6030 2N6031
    Text: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and


    OCR Scan     		PDF 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031

    N415AF

    Abstract: BUV24 N415A MKT1822-1.0J250
    Text: MOT OROL A SC lEE D I t3b?aSM QGÖMIOM T | XSTRS/R F T 'ò ì'1 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 A M P E R E S SWITCHMODE* SER IES NPN SILICO N POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . designed for high current, high speed, high power applications.


    OCR Scan     		PDF