NPN POWER TRANSISTOR SPICE Search Results

NPN POWER TRANSISTOR SPICE Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN POWER TRANSISTOR SPICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFG591 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor	Original	BFG591 OT223 R77/02/pp14 BFG591	PDF
NPN planar RF transistor Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor	Original	BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937	PDF
MBC964 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Preliminary specification 2002 Jan 02 Philips Semiconductors Preliminary specification NPN 7 GHz wideband transistor BFQ591 PINNING FEATURES • High power gain PIN	Original	M3D109 BFQ591 BFQ591 MBK514 SCA73 603508/02/pp11 MBC964	PDF
10GHz oscillator Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ	PDF
4 pin dual-emitter Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587 Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Preliminary specification 2001 Dec 03 Philips Semiconductors Preliminary specification NPN 7 GHz wideband transistor BFQ591 PINNING FEATURES • High power gain PIN	Original	M3D109 BFQ591 BFQ591 MBK514 SCA73 603508/02/pp11	PDF
4 pin dual-emitter Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN	PDF
BFG591,115 Abstract: BFG591 Application Notes Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain	Original	BFG591 BFG591 OT223 MSB002 OT223. R77/02/pp14 771-BFG591-T/R BFG591,115 BFG591 Application Notes	PDF
BFG591 Application Notes Abstract: BFG591 BFG591 amplifier DIN45004B Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain	Original	BFG591 OT223 R77/02/pp14 BFG591 Application Notes BFG591 BFG591 amplifier DIN45004B	PDF
BFU510 Abstract: SiGe POWER TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain	Original	M3D124 BFU510 SCA75 613516/03/pp16 BFU510 SiGe POWER TRANSISTOR	PDF
BFU540 Abstract: SiGe POWER TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 FEATURES PINNING • Very high power gain	Original	M3D124 BFU540 SCA75 613516/04/pp16 BFU540 SiGe POWER TRANSISTOR	PDF
BFG425W Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN	Original	BFG425W R77/05/pp13 BFG425W	PDF
BFG410W Abstract: MARKING CODE P4 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain	Original	BFG410W R77/04/pp13 BFG410W MARKING CODE P4	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN	Original	BFG410W R77/04/pp13	PDF

str f 6267 Abstract: str f 6267 equivalent STR 6267 str 6267 f bfr90a transistor BF 199 STR W 6267 transistor sta 733 Text: DATA SHEET book, halfpage M3D071 BFG92A/X NPN 5 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1998 Sep 23 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X FEATURES DESCRIPTION • High power gain	Original	M3D071 BFG92A/X OT143B MSB014 OT143B. SCA60 125104/00/04/pp16 str f 6267 str f 6267 equivalent STR 6267 str 6267 f bfr90a transistor BF 199 STR W 6267 transistor sta 733	PDF
TRANSISTOR L2 Abstract: transistor bf 194 E C B Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	BFG325/XR OT143R TRANSISTOR L2 transistor bf 194 E C B	PDF
transistor l2 Abstract: No abstract text available Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	BFG310/XR OT143R transistor l2	PDF
A7 NPN EPITAXIAL Abstract: Philips FA 145 BFG310W/XR BFG310W Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain	Original	BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W	PDF
rf transistor mar 8 Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips	PDF
bc337 TRANSISTOR equivalent Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103 Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103	PDF
npn C 1740 Abstract: transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103 Text: Philips Semiconductors Product specification NPN 2 G H z RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 7110flEb 0CH3034 npn C 1740 transistor bf 422 NPN equivalent of 2222 NPN rf transistor mar 8 2222 032 NPN planar RF transistor BD228 BLT11 NPN power transistor spice SOT103	PDF
transistor bf 422 NPN Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103 Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency	OCR Scan	BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103	PDF
MJE 340 transistor Abstract: SOT-103 74341 MSB037 BFR541 npn transistor high current Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR541 FEATURES DESCRIPTION • High power gain • High transition frequency Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT 103 package. • Gold metallization ensures	OCR Scan	BFR541 OT103 MSB037 OT103. 711002b MJE 340 transistor SOT-103 74341 MSB037 BFR541 npn transistor high current	PDF
D02fc Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6 Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT 172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application	OCR Scan	BFQ621 D02fc transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6	PDF

NPN POWER TRANSISTOR SPICE Search Results

NPN POWER TRANSISTOR SPICE Result Highlights (5)

NPN POWER TRANSISTOR SPICE Datasheets Context Search

BFG591

NPN planar RF transistor

MBC964

10GHz oscillator

4 pin dual-emitter

Untitled

4 pin dual-emitter

BFG591,115

BFG591 Application Notes

BFU510

BFU540

BFG425W

BFG410W

Untitled

str f 6267

TRANSISTOR L2

transistor l2

A7 NPN EPITAXIAL

rf transistor mar 8

bc337 TRANSISTOR equivalent

npn C 1740

transistor bf 422 NPN

MJE 340 transistor

D02fc