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    NPN TRANSISTOR Z4 Search Results

    NPN TRANSISTOR Z4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN TRANSISTOR Z4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    D1649

    Abstract: SC-75 KA4A4M
    Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES ★ PACKAGE DRAWING Unit: mm • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1


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    SC-75 D1649 SC-75 KA4A4M PDF

    KA4A4M

    Abstract: SC-75 A30150
    Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1


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    SC-75 KA4A4M SC-75 A30150 PDF

    D1649

    Abstract: KA4A4M SC-75 KA4L4M
    Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1


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    SC-75 D1649 KA4A4M SC-75 KA4L4M PDF

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


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    MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 PDF

    KA4A4M

    Abstract: FA4L4L
    Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx SC-75 0.8 ± 0.1 1.6 ± 0.1


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    SC-75 KA4A4M FA4L4L PDF

    MRF641

    Abstract: 104B
    Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    MRF641/D MRF641 MRF641/D* MRF641 104B PDF

    MRF654

    Abstract: MOTOROLA POWER TRANSISTOR motorola rf Power Transistor case 244-04
    Text: MOTOROLA Order this document by MRF654/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF654 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


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    MRF654/D MRF654 MRF654/D* MRF654 MOTOROLA POWER TRANSISTOR motorola rf Power Transistor case 244-04 PDF

    2sc4624

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W


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    2SC4624 2SC4624 900MHz. 800-900MHz 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W


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    2SC4624 2SC4624 900MHz. 800-900MHz 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.


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    MRF5175 PDF

    choke vk200

    Abstract: VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B
    Text: MRF5174 silicon Tlie RF Line 2 W — 400 M Hz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband iarge-signal driver and predriver amplifier stages in the 200*600 M H z frequency range. • Specified 28*Volt, 400 -M H z Characteristics Output Power - 2.0 Watts


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    MRF5174 28-Volt, 400-MHz choke vk200 VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B PDF

    MRF5175 transistor

    Abstract: MRF5175 transistor 2sc 546
    Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver


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    MRF5175 28-Volt, 400-M T-33-05 MRF5175 transistor MRF5175 transistor 2sc 546 PDF

    vk200 coil

    Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON


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    MRF321 vk200 coil jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200 PDF

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


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    b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164 PDF

    transistor c 2316

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR


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    MRF323 MRF323 transistor c 2316 PDF

    QM2D

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages


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    MRF393 QM2D PDF

    MRF860

    Abstract: 2n2222 npn transistor 2N2222 rf
    Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


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    MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf PDF

    MRF69

    Abstract: No abstract text available
    Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6985 The RF Line N PN S ilicon Push-Pull RF P o w er Transistor 125 WATTS. 30-400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r w id e b a n d large-signal o u tp u t and


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    2N6985 MRF69 PDF

    MRF754

    Abstract: MRF75
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 8 .0 W - 4 70 MHz - 7 .5 V HIGH FREQUENCY TR AN SISTO R NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON designed for 5 .0 to 10 Volt UHF large-signal a m p lifie r application s in in d u stria l and com m ercial FM equipm ent operating in the


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    MRF754 MRF754 MRF75 PDF

    Motorola 90 31 te 2482

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB


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    PDF

    MRF4070

    Abstract: 15 w RF POWER TRANSISTOR NPN
    Text: MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA The RF Line 70 W 175 MHz CONTROLLED Q RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . designed for 1 2.5 Volt VH F large-sign al am plifie r applications in industrial and com m ercial FM equipm ent operating to 1 7 5 M H z


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    MRF4070 MRF4070 15 w RF POWER TRANSISTOR NPN PDF

    D73 transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


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    MRF321 MRF321 b3b72S5 D73 transistor PDF