MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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D1649
Abstract: SC-75 KA4A4M
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES ★ PACKAGE DRAWING Unit: mm • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1
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SC-75
D1649
SC-75
KA4A4M
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KA4A4M
Abstract: SC-75 A30150
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1
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SC-75
KA4A4M
SC-75
A30150
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D1649
Abstract: KA4A4M SC-75 KA4L4M
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1
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SC-75
D1649
KA4A4M
SC-75
KA4L4M
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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MRF20030/D
MRF20030
BD135
BD136
MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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KA4A4M
Abstract: FA4L4L
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx SC-75 0.8 ± 0.1 1.6 ± 0.1
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SC-75
KA4A4M
FA4L4L
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MRF641
Abstract: 104B
Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
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MRF641/D
MRF641
MRF641/D*
MRF641
104B
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MRF654
Abstract: MOTOROLA POWER TRANSISTOR motorola rf Power Transistor case 244-04
Text: MOTOROLA Order this document by MRF654/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF654 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
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MRF654/D
MRF654
MRF654/D*
MRF654
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
case 244-04
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2sc4624
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W
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2SC4624
2SC4624
900MHz.
800-900MHz
900MHz
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.
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MRF5175
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choke vk200
Abstract: VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B
Text: MRF5174 silicon Tlie RF Line 2 W — 400 M Hz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband iarge-signal driver and predriver amplifier stages in the 200*600 M H z frequency range. • Specified 28*Volt, 400 -M H z Characteristics Output Power - 2.0 Watts
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MRF5174
28-Volt,
400-MHz
choke vk200
VK200 ferrite
mrf5174
VK200 r.f choke
VK200 ferrite choke
Allen Bradley 706
vk200 ferrite bead
type 2951
eb 1361
VK200/20-4B
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MRF5175 transistor
Abstract: MRF5175 transistor 2sc 546
Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver
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MRF5175
28-Volt,
400-M
T-33-05
MRF5175 transistor
MRF5175
transistor 2sc 546
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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2SC1600
Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is
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b4S7414
NE57500
NE57510
NE57520
NE575
2SC1600
2SC1042
2SC1642
NE57520
321E
S21E
2SC164
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transistor c 2316
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR
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MRF323
MRF323
transistor c 2316
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QM2D
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n P ush-Pull RF P o w e r T ra n sisto r 100 WATTS, 30-500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal output and driver amplifier stages
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MRF393
QM2D
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MRF860
Abstract: 2n2222 npn transistor 2N2222 rf
Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF860/D
2PHX33728Q-0
MRF860
2n2222 npn transistor
2N2222 rf
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MRF69
Abstract: No abstract text available
Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6985 The RF Line N PN S ilicon Push-Pull RF P o w er Transistor 125 WATTS. 30-400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r w id e b a n d large-signal o u tp u t and
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2N6985
MRF69
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MRF754
Abstract: MRF75
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 8 .0 W - 4 70 MHz - 7 .5 V HIGH FREQUENCY TR AN SISTO R NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON designed for 5 .0 to 10 Volt UHF large-signal a m p lifie r application s in in d u stria l and com m ercial FM equipm ent operating in the
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MRF754
MRF754
MRF75
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Motorola 90 31 te 2482
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB
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MRF4070
Abstract: 15 w RF POWER TRANSISTOR NPN
Text: MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA The RF Line 70 W 175 MHz CONTROLLED Q RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . designed for 1 2.5 Volt VH F large-sign al am plifie r applications in industrial and com m ercial FM equipm ent operating to 1 7 5 M H z
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MRF4070
MRF4070
15 w RF POWER TRANSISTOR NPN
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D73 transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321
MRF321
b3b72S5
D73 transistor
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