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    NTD48 Price and Stock

    onsemi NTD4858N-35G

    MOSFET N-CH 25V 11.2A/73A IPAK
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    DigiKey NTD4858N-35G Tube 715 1
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    Rochester Electronics LLC NTD4856NT4G

    MOSFET N-CH 25V 13.3A/89A DPAK
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    onsemi NTD4856NT4G

    MOSFET N-CH 25V 13.3A/89A DPAK
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    Rochester Electronics NTD4856NT4G 2,812 1
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    onsemi NTD4810NT4G

    MOSFET N-CH 30V 9A/54A DPAK
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    Quest Components NTD4810NT4G 23,828
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    Rochester Electronics NTD4810NT4G 3,670 1
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    Rochester Electronics LLC NTD4810NT4G

    MOSFET N-CH 30V 9A/54A DPAK
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    DigiKey NTD4810NT4G Bulk 1,480
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    Find more NTD48 price and stock on Findchips.com

    NTD48 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4804N On Semiconductor Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4804N-1G On Semiconductor Power MOSFET 30 V, 117 A, Single N-Channel, DPAK Original PDF
    NTD4804N-1G On Semiconductor NTD4804 - TRANSISTOR 14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3, FET General Purpose Power Original PDF
    NTD4804N-35G On Semiconductor Power MOSFET 30 V, 117 A, Single N-Channel, DPAK Original PDF
    NTD4804N-35G On Semiconductor NTD4804 - TRANSISTOR 14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AD-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4804NA-1G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14.5A IPAK Original PDF
    NTD4804NA-35G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14.5A IPAK Original PDF
    NTD4804NAT4G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14.5A DPAK Original PDF
    NTD4804NT4G On Semiconductor Power MOSFET 30 V, 117 A, Single N-Channel, DPAK Original PDF
    NTD4804NT4G On Semiconductor NTD4804 - TRANSISTOR 14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3, FET General Purpose Power Original PDF
    NTD4805N On Semiconductor Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4805N-1G On Semiconductor Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4805N-35G On Semiconductor Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4805NT4G On Semiconductor Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4806N On Semiconductor Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4806N-1G On Semiconductor Power MOSFET 30 V, 76 A, Single N-Channel, DPAK Original PDF
    NTD4806N-1H On Semiconductor Power MOSFET 30V 76A 6 mOhm Single N-Channel IPAK Original PDF
    NTD4806N-35G On Semiconductor Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4806NT4G On Semiconductor Power MOSFET 30 V, 76 A, Single N-Channel, DPAK Original PDF
    NTD4806NT4H On Semiconductor Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK Original PDF

    NTD48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    369D

    Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
    Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    369D

    Abstract: NTD4815NH NTD4815NHT4G 15nhg
    Text: NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4815NH NTD4815NH/D 369D NTD4815NH NTD4815NHT4G 15nhg

    48 13ng mosfet

    Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    56NG mosfet

    Abstract: 48 56NG 56NG 4856N 4856ng 369D
    Text: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4856N NTD4856N/D 56NG mosfet 48 56NG 56NG 4856N 4856ng 369D

    55NG

    Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
    Text: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4855N NTD4855N/D 55NG 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    4805ng

    Abstract: 369D NTD4805N
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4805N NTD4805N/D 4805ng 369D NTD4805N

    Untitled

    Abstract: No abstract text available
    Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4815N NTD4815N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D

    4810NG

    Abstract: No abstract text available
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4810N NTD4810N/D 4810NG

    48 13ng mosfet

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet

    08NG

    Abstract: No abstract text available
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 08NG

    4810NG

    Abstract: 4810N
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4810N 10mplicable NTD4810N/D 4810NG 4810N

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N

    4860ng

    Abstract: 60NG 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet

    4806n

    Abstract: 06ng 4806ng 48 06ng 369AA-01
    Text: NTD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4806N NTD4806N/D 4806n 06ng 4806ng 48 06ng 369AA-01