cq837
Abstract: No abstract text available
Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36
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364080AS
364080ASG
THM364080AS/ASG
TC514100ASJ
364080ASG
A0-A10
THM36408QAS
THM364080AS
THM364080ASG
cq837
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ta25 du14
Abstract: No abstract text available
Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits
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ST1641OOOAG1
144-PIN
STI641000AG1
44-pin
-60LVG
ta25 du14
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Untitled
Abstract: No abstract text available
Text: 1 ,0 4 8 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY D ESC R IPTIO N The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by
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THM321020S
TC514400J
THM321020S-80,
THM321020SG-80,
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THM401020
Abstract: No abstract text available
Text: 1,048,576 W O R D Sx 4 0 BIT D YN A M IC RAM MODULE DESCRIPTION The THM401020SG is a 1,048,576 words by 40 bits dynamic RAM module which assembled .10 pcs of TC514400J on the printed circuit board. The THM401020SG is optimized for application to the systems which are required high density and
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THM401020SG
TC514400J
775mW
THMxxxxxx-80)
950mW
THMxxxxxx-10)
B-100
THM401020SG-80,
B-101
THM401020
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Untitled
Abstract: No abstract text available
Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.
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HB56G51236CC
288-WordX
36-Bit
512KX36
514900LTT)
88-pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE fUHf— p a n i s i 1 MT58LC64K32/36E1 6 4 K x 32/36 SYNCBURST SRAM +3.3V SUPPLY, 2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10,11 and 12ns
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MT58LC64K32/36E1
160-PIN
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Untitled
Abstract: No abstract text available
Text: AK63264AW 65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory M O C M IT CORPORATION DESCRIPTION The Accutek AK63264A SRAM Module consists of fast high performance SRAMs mounted on a low height, 64 pin SIM or ZIP Board. The module utilized four 32 pin 64K x 8 SRAMs in 300 mil
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AK63264A
12nSEC
35nSEC
AK63264AW-12
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Untitled
Abstract: No abstract text available
Text: ADVANCE I 128K TECHMOLOGV INC X MT58LC128K36D7 36 SYNCBURST SRAM 128K x 36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns
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MT58LC128K36D7
160-PIN
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MH25632CNXJ-7
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH25632CNXJ-6,-7 FAST PAGE MODE 83886Q8-BIT(262144-WORD BY 32-BIT)DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H25632CN XJ is 262144-word by 32-bit dynamic RAM module. That module consists of two industry 256K
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MH25632CNXJ-6
83886Q8-BIT
262144-WORD
32-BIT
H25632CN
MH2S632CNXJ-6
MH25632CNXJ--7
MH25632CNXJ-7
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Untitled
Abstract: No abstract text available
Text: SGRAM MODULE KMM965G512BQ P N / KMM966G512BQ(P)N 4MB SGRAM MODULE (512Kx64 SODIMM based on 256Kx32 SGRAM) Unbuffered SGRAM Graphics 64-bit Non-ECC/Parity 144-pin SODIMM Revision 2.5 July 1998 Rev. 2.5 (July. 1998) ELECTRONICS SGRAM MODULE KMM965G512BQ(P)N / KMM966G512BQ(P)N
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KMM965G512BQ
KMM966G512BQ
512Kx64
256Kx32
64-bit
144-pin
143MHz)
KMM965G512B
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41 OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372F400BK/BS
KMM372F41OBK/BS
KMM372F400BK/BS
KMM372F41
4Mx72
KMM372F40
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM5V72A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 5V 72A 214A is a 2M x 72-bit EDO m ode C M O S DRAM module consisting of nine H Y51V 17804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0 ln F and 0.01 uF
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HYM5V72A214A
72-bit
17804B
A0-A10)
1EC07-10-JAN96
5V72A
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TM248NBK36U
Abstract: TM124MBK36U TM248NBK36F TM124MBK36F
Text: TM124MBK36F, TM124MBK36U1048576 BY 36-BIT DRAM MODULE TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE SMMS650A - APRIL 1995 - REVISED JUNE 1995 | • Organization TM124MBK36F . . . 1 048 576 x 36 TM248NBK36F . . . 2 097 152 x 36 • Single 5-V Power Supply ±10% Tolerance
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TM124MBK36F,
TM124MBK36U1048576
36-BIT
TM248NBK36F,
TM248NBK36U
SMMS650A
TM124MBK36F
TM248NBK36F
72-Pln
TM124MBK36U
TM248NBK36F
TM124MBK36F
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BK36A-70
Abstract: No abstract text available
Text: TM497MBK36A, TM497MBK36Q 4194 304 BY 36-BIT DYNAMIC RAM MODULE S M M S 446A -D EC E M B ER 1992-R E V IS E D JANUARY 1993 * Organization . . . 4 194 304 x 36 * Single 5-V Power Supply ±10% Tolerance * Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME
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TM497MBK36A,
TM497MBK36Q
36-BIT
1992-R
72-Pin
16-Megabit
SMMS446A-DECEMBER1992-REVISSO
BK36A-70
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MT501C
Abstract: No abstract text available
Text: ADVANCE 128K SYNCHRONOUS SRAM • • • • • • • • • • • • • • +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE PIN ASSIGNMENT Top View Fast access tim es: 4 .5 ,5 , 5.5, 6 and 7ns Fast O E # access tim es: 4.5, 5, 5.5 and 6ns
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MT58LC128K32/36F1
MTS6LC128K32ft6F1
MT501C
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Q6162
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH51236XJ,SXJ-8,-10 FAST PAGE MODE 18874368-BIT 524288-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 51 236 X J, SXJ is 5 2 4 2 8 8 -w o rd by 3 6 - b it dynamic PIN CONFIGURATION (TOP VIEW) RAM module. This consists o f fo u r industry standard 256K
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MH51236XJ
18874368-BIT
524288-WORD
36-BIT
Q6162
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION AK632256AW 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory MICROCIRCUIT CORPORATION The Accutek AK632256AW SRAM Module consists of eight fast high performance SRAMs mounted on a low profile, 64 pin SIM PCB. The module utilizes four 28 pin 256K x 4 SRAMs in 300 mil
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AK632256AW
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tc 97101
Abstract: 5 PEN PC TECHNOLOGY advance oQ26
Text: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM
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T18LD
168-pin,
048-cycle
MT9LD272A
MT1BLD472A
tc 97101
5 PEN PC TECHNOLOGY advance
oQ26
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Untitled
Abstract: No abstract text available
Text: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1
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KMM5362000A/AG
KMM5362000A
bitsX36
362000A
20-pin
72-pin
362000A-
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs high speed, low-power CMOS designs using a thin-film tran
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100-pin
DES10.
LH51V1032
LH51V1032C4
100TQFP
TQFP-1OO-P-1420)
LH51V1032C4
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ED18L32512
Abstract: ED18L
Text: W £ \ EDI8L326SC ÎŒ CIRO NC ÛESGNS N C 64Kx32 SRAM Module 64Kx32 CMOS High Speed Static RAM Features 64K x32 bit C M O S Static The E D I8 L 3 2 6 5 C is a high speed, high performance, four R andom A cce ss M em ory Array megabit density Static R A M organized as a 64K x32 bit
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EDI8L326SC
64Kx32
128Kx16
I8L3265C
EDI8L3265CC
EDB13265C
EDI8L3265C
S4Kx32
ED18L32512
ED18L
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC238361A-xxBS24/DS24 8,388,608-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC238361 A-xxBS24/ DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs 4M x 4 in SOJ packages
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MSC238361A-xxBS24/DS24
608-Word
36-Bit
MSC238361
-xxBS24/
16-Mb
72-pin
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LT-88
Abstract: No abstract text available
Text: HYM71V16755HCT8 16Mx72, 16Mx8 based, PC100 DESCRIPTION The H ynix H Y M 71V16755HC T8 Series are 16M x72bits ECC Synchronous DRAM M odules. The m odules are com posed o f nine 16M x8bits CM O S Synchronous DR AM s in 400m il 54pin TS O P -ll package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin
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HYM71V16755HCT8
16Mx72,
16Mx8
PC100
71V16755HC
x72bits
54pin
168pin
0022uF
HYM71V16755HCTB
LT-88
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S-10
Abstract: No abstract text available
Text: 1,0 48 ,5 7 6 W O R D S x 32 BIT D Y N A M IC RAM MODULE PRELIMINARY DESCRIPTION The THM 321020S is a 1,048,576 words by 32 b its dynam ic RAM module which assembled 8 pcs of T C 514400J on the printed circuit board. The THM 321020S can be as well used as 2,097,152 words by
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THM321020S
TC5144Q0J
THM321020
THM321020S-80,
THM321020SG-80,
V0H-0Q31
S-10
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