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    P1003E Price and Stock

    APEM Inc LP1003EXXH00

    TRACKBALL 1" LP100 SERIAL
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    APEM Inc LP1003EXXH00B

    TRACKBALL 1" PS/2 W/BLUE BACKLIT
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    Cree, Inc. MLEAWT-P1-0000-0003E5

    High Power LEDs - White White 4000 K 85-CRI, XLamp MLEAWT
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    Mouser Electronics MLEAWT-P1-0000-0003E5
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    Cree, Inc. MLESWT-P1-0000-0003E5

    High Power LEDs - White White 4000 K 85-CRI, XLamp MLESWT
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    Mouser Electronics MLESWT-P1-0000-0003E5
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    Niko Semicondutor Co Ltd P1003EVG

    INSTOCK
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    Chip 1 Exchange P1003EVG 867
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    P1003E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P1003EVG

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34415AA-N •概要 ■特長 ELM34415AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-13A ・ Rds on < 10.5mΩ (Vgs=-10V) ・ Rds(on) < 16mΩ (Vgs=-4.5V)


    Original     		PDF ELM34415AA-N P1003EVG MAR-31-2006 P1003EVG

    p1003E

    Abstract: p1003ev
    Text: 单 P 沟道 MOSFET ELM34415AA-N •概要 ■特点 ELM34415AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-13A ·Rds on < 10.5mΩ (Vgs=-10V) ·Rds(on) < 16mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34415AA-N P1003EVG MAR-31-2006 p1003E p1003ev

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34415AA-N •General description ■Features ELM34415AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-13A Rds(on) < 10.5mΩ (Vgs=-10V) Rds(on) < 16mΩ (Vgs=-4.5V)


    Original     		PDF ELM34415AA-N ELM34415AA-N P1003EVG MAR-31-2006

    p1003evg

    Abstract: p1003ev p1003E
    Text: Single P-channel MOSFET ELM34415AA-N •General description ■Features ELM34415AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-13A Rds(on) < 10.5mΩ (Vgs=-10V) Rds(on) < 16mΩ (Vgs=-4.5V)


    Original     		PDF ELM34415AA-N ELM34415AA-N P1003EVG MAR-31-2006 p1003evg p1003ev p1003E