Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P1003EVG Search Results

    SF Impression Pixel

    P1003EVG Price and Stock

    Niko Semicondutor Co Ltd P1003EVG

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange P1003EVG 867
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    P1003EVG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P1003EVG

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34415AA-N •概要 ■特長 ELM34415AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-13A ・ Rds on < 10.5mΩ (Vgs=-10V) ・ Rds(on) < 16mΩ (Vgs=-4.5V)


    Original
    ELM34415AA-N P1003EVG MAR-31-2006 P1003EVG PDF

    p1003E

    Abstract: p1003ev
    Text: 单 P 沟道 MOSFET ELM34415AA-N •概要 ■特点 ELM34415AA-N 是 P 沟道低输入电容,低工作电 •Vds=-30V 压,低导通电阻的大电流 MOSFET。 ·Id=-13A ·Rds on < 10.5mΩ (Vgs=-10V) ·Rds(on) < 16mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original
    ELM34415AA-N P1003EVG MAR-31-2006 p1003E p1003ev PDF

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original
    O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G PDF

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34415AA-N •General description ■Features ELM34415AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-13A Rds(on) < 10.5mΩ (Vgs=-10V) Rds(on) < 16mΩ (Vgs=-4.5V)


    Original
    ELM34415AA-N ELM34415AA-N P1003EVG MAR-31-2006 PDF

    p1003evg

    Abstract: p1003ev p1003E
    Text: Single P-channel MOSFET ELM34415AA-N •General description ■Features ELM34415AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-13A Rds(on) < 10.5mΩ (Vgs=-10V) Rds(on) < 16mΩ (Vgs=-4.5V)


    Original
    ELM34415AA-N ELM34415AA-N P1003EVG MAR-31-2006 p1003evg p1003ev p1003E PDF