tl249
Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
H-33288-6,
H-34288-6,
tl249
tl2472
TL244
TRANSISTOR tl131
TL251
tl239
PTFB182503
tl250
TL242
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PDF
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ATC-600A
Abstract: BCP56 LM7805 PTFA212001E PTFA212001F RO4350
Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212001E
PTFA212001F
PTFA212001E
PTFA212001F
200-watt
H-36260-2
H-37260-2
ATC-600A
BCP56
LM7805
RO4350
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PDF
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a2324
Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
a2324
RF35
RO4350
BCP56
LM7805
PTFA192401F V4
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192001E
PTFA192001F
200-watt
H-36260-2
H-37260-2
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PDF
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PTFA072401FLV5XWSA1
Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the
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PTFA072401EL
PTFA072401FL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
PTFA072401FLV5XWSA1
VARIABLE RESISTOR 2K
LM7805
LTN 156
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PDF
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PTFA212001E
Abstract: ATC-600A PTFA212001F LM7805 05 marking us capacitor pf l1 BCP56 LM7805 RO4350 A212001E PTFA212001EV4
Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212001E
PTFA212001F
PTFA212001E
PTFA212001F
200-watt
H-36260-2
H-37260-2
ATC-600A
LM7805 05
marking us capacitor pf l1
BCP56
LM7805
RO4350
A212001E
PTFA212001EV4
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PDF
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diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
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PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
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PDF
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smd diode code pj 43
Abstract: TBD0603 smd diode code pj 59 smd diode code pj 51 BERG69157-102 BG1 SOT23-6 3pin_solder_jumper BG3 SOT23-6 smd diode code pj 70 CP 022 ND
Text: Preliminary Technical Data Evaluation Board for the 16-Bit, Dual, Continuous Time Sigma-Delta ADC AD9262EBZ/AD9262-5EBZ/AD9262-10EBZ Therefore, minimal or no filtering is required between the demodulator and the ADC. A prototype area for a fourth order filter is provided in which additional filtering can be tested.
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16-Bit,
AD9262EBZ/AD9262-5EBZ/AD9262-10EBZ
AD9262,
AD9516
ADR130B
opt95-SN74LVC
296-13010-1-ND
ADA4937-2
smd diode code pj 43
TBD0603
smd diode code pj 59
smd diode code pj 51
BERG69157-102
BG1 SOT23-6
3pin_solder_jumper
BG3 SOT23-6
smd diode code pj 70
CP 022 ND
|
PDF
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
|
PDF
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TL113
Abstract: tl201 TL217 w3 smd transistor transistor c111
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
TL113
tl201
TL217
w3 smd transistor
transistor c111
|
PDF
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TC-00104-00
Abstract: DE C308 HDR 2x6 Variable resistor 10K ohm 47UF 50V SMT CASE C 5k potentiometer center tap ferrite smt emi 7A SOIC8 ANALOG DEVICE j301 HC49 BAT54C-13
Text: D O C - 0 3 6 4 - 0 1 0 R E V D DEMO9S08QG8 Demonstration Board for Freescale MC9S08QG8 Also Applies to the CSM9S08QG8SLK Axiom Manufacturing • 2813 Industrial Lane • Garland, TX 75041 Email: Sales@axman.com Web: http://www.axman.com D E M O 9 S 0 8 Q G 8
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DEMO9S08QG8
MC9S08QG8
CSM9S08QG8SLK
CSM9S08QG8SLK.
Ssop20)
MAX3218
Sot23-5)
LMV321
TC-00104-00
MC68908QG8CPB
TC-00104-00
DE C308
HDR 2x6
Variable resistor 10K ohm
47UF 50V SMT CASE C
5k potentiometer center tap
ferrite smt emi
7A SOIC8 ANALOG DEVICE
j301 HC49
BAT54C-13
|
PDF
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10 ohms potentiometer
Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output
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PTFA182001E
PTFA182001E
200-watt
10 ohms potentiometer
08051J100GBTTR
BCP56
LM7805
RO4350
|
PDF
|
LM7805
Abstract: BCP56 PTFA212401E PTFA212401F
Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212401E
PTFA212401F
PTFA212401E
PTFA212401F
240-watt
H-36260-2
H-37260-2
LM7805
BCP56
|
PDF
|
|
|
TL235
Abstract: TL236 TL230 TRANSISTOR tl131 TL1251
Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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Original
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PTFB211803EL
PTFB211803FL
PTFB211803FL
180-watt
H-33288-6
H-34288-6
TL235
TL236
TL230
TRANSISTOR tl131
TL1251
|
PDF
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Untitled
Abstract: No abstract text available
Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212401E
PTFA212401F
PTFA212401F
240-watt
H-36260-2
H-37260-2
|
PDF
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capacitor marking c106
Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
capacitor marking c106
NFM18Ps105
TL217
NFM18PS105R0J3
TL222
Transistor tl217
TRANSISTOR SMD w2
c105 TRANSISTOR
c103 TRANSISTOR DATA
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PDF
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OMRON p7 487
Abstract: CC0603KRX7R9 xilinx USB cable CN0062 EMERSON rectifier hsc-adc-evalcz C431L raychem cable termination KIT HT HSC-ADC-EVALC ADL5382
Text: Evaluation Board User Guide UG-093 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluation Board for the Dual, Continuous Time Sigma-Delta Modulator To achieve optimal performance from the AD9267, a low jitter
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UG-093
AD9267,
AD9516
AD9516-0
AD9516-0
UG08877-0-3/10
OMRON p7 487
CC0603KRX7R9
xilinx USB cable
CN0062
EMERSON rectifier
hsc-adc-evalcz
C431L
raychem cable termination KIT HT
HSC-ADC-EVALC
ADL5382
|
PDF
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Untitled
Abstract: No abstract text available
Text: PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz
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PTFA071701E
PTFA071701F
PTFA071701E
PTFA071701F
170-watt,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PTFA212001E PTFA212001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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Original
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PTFA212001E
PTFA212001F
PTFA212001E
PTFA212001F
200-watt
H-36260-2
H-37260-2
|
PDF
|
ptfa192001e
Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND
Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications
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Original
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PTFA192001E
PTFA192001F
PTFA192001E
PTFA192001F
200-watt
H-36260-2
H-37260-2
PTFA192001E V4
LM7805
RO4350
PCS3475CT-ND
|
PDF
|
PTFA092213EL
Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier
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PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
LM7805
resistor 51k
transistor c331
BCP56
R250
RO4350
|
PDF
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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Original
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PTFA220081M
PTFA220081M
PG-SON-10
c102 TRANSISTOR
c103 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR c105
TRANSISTOR c104
c103 m TRANSISTOR
p 4712
NFM18PS105R0J3
c105 TRANSISTOR
tl113
|
PDF
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M5819P
Abstract: 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248
Text: AMD K6 SDB - TOP LEVEL Revised: Friday, March 12, 1999 K6SDBREVB Revision: REV C Item Quantity Reference Value _ 1 2 1 BT1 27 C1,C2,C4,C8,C12,C20,C21, C23,C26,C36,C37,C38,C42, C47,C56,C59,C60,C61,C62, C63,C64,C68,C79,C95,C97,
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QFP160
100MHz
SSOP48
32-bit,
QFP208
TS040
QFP144
TP11SH8
PE68515
PLCC32
M5819P
5-pin smd c255
NPN C239
C312 diode
c227 diode
MOSFET R166
SPE1302-ND
S5920Q
NPN C246
diode c248
|
PDF
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