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    PM50302F Search Results

    PM50302F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PM50302F Hitachi Semiconductor Silicon N-Channel Power MOS FET Module Original PDF
    PM50302F Renesas Technology Silicon N-Channel Power MOS FET Module Original PDF
    PM50302F Hitachi Semiconductor Power Transistors Data Book Scan PDF
    PM50302F Unknown FET Data Book Scan PDF
    PM50302F Unknown Catalog Scans - Shortform Datasheet Scan PDF

    PM50302F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PM50302F

    Abstract: Hitachi DSA00309
    Text: PM50302F Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original
    PDF PM50302F PM50302F Hitachi DSA00309

    pm50302f

    Abstract: Hitachi DSA001652
    Text: PM50302F Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original
    PDF PM50302F D-85622 pm50302f Hitachi DSA001652

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original
    PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    PM45302F

    Abstract: Hitachi DSA001652
    Text: PM45302F Silicon N-Channel MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain


    Original
    PDF PM45302F D-85622 PM45302F Hitachi DSA001652

    PM50302F

    Abstract: diode H5 1.5-25 5v.1 45F125
    Text: HITACHI PM50302F SILICON N -C H A N N E L POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low OrvResistance • High Speed Switching • Low Drive Current • Wide Area of Safe Operation • Inherent Parallel Diod between Source and Drain


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    PDF PM50302F PM50302F diode H5 1.5-25 5v.1 45F125

    Untitled

    Abstract: No abstract text available
    Text: PM50302F Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain


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    PDF PM50302F D-85622

    Untitled

    Abstract: No abstract text available
    Text: PM50302F Silicon N-Channel Power MOS FET Module HITACHI Application H igh Speed P ow er Sw itching Features • E quipped w ith P ow er M O S FET • Low on-resistance • H igh speed sw itching • Low drive current • W ide area o f safe operation • Inherent parallel diode betw een source and drain


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    PDF PM50302F 1111II

    PF0020

    Abstract: PM4550C PU7456 TPM relay
    Text: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA


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    PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


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    PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2SH14

    Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
    Text: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>


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    PDF 2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 2SK1056 2SK1087 2SK1058 2SK2220 2SH14 2SH21 2SH11 2SH19 6AM13 4AK19

    "MOSFET Modules"

    Abstract: MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM4575J PM50100K
    Text: HITACHI 16 1.7 Power MOSFET Modules module type . These devices incorporate high speed source / drain diodes. Hitachi has developed two m odule packages, each incorporating two independent pow er MOSFETs with channel power dissipations of 200W or 300W per FET chip depending on the


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    PDF PM45302F PM50302F PM45502C PM50502C PM4550J PM5050J PM4575J "MOSFET Modules" MOSFET Modules power mosfet 500 A PM45502C PM50302F MOSFET 450 1060 fet PM4550J PM50100K

    2SJ177

    Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
    Text: Index P-Channel 2SJ Series 2SJ76. 149 2SJ77. 149


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    PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294