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    2SJ280L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 43Mohm LDPAK(L) Visit Renesas Electronics Corporation
    2SJ206-T2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ211(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ243(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, USM, / Visit Renesas Electronics Corporation
    2SJ202-T1-A Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
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    2SJ2 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ20 Unknown FET Data Book Scan PDF
    2SJ20 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ20 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ200 Toshiba Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10) Original PDF
    2SJ200 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ200 Toshiba P-Channel MOSFET Original PDF
    2SJ200 Toshiba Original PDF
    2SJ200 Unknown FET Data Book Scan PDF
    2SJ200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ200 Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200 Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF
    2SJ200 Toshiba Silicon P channel field effect transistor for high power amplifier applications Scan PDF
    2SJ200-O Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200O Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SJ200Y Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
    2SJ200-Y(F) Toshiba 2SJ200 - MOSFET P-CH 180V 10A TO-3 Original PDF
    ...

    2SJ2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking PP

    Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1


    Original     		PDF 2SJ213 OT-89 -100V -300mA marking PP 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp

    marking H17

    Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.


    Original     		PDF 2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17

    2SJ201

    Abstract: 2SK1530 toshiba pb includes
    Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes

    EN4233

    Abstract: 2SJ259
    Text: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		PDF EN4233 2SJ259 2SJ259] 2SJ259-applied EN4233 2SJ259

    2SJ257

    Abstract: No abstract text available
    Text: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original     		PDF EN4242 2SJ257 2SJ257] 2SJ257-applied 2SJ257

    2SJ231

    Abstract: EN3816
    Text: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0


    Original     		PDF EN3816 2SJ231 2SJ231] 2SJ231 EN3816

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL

    2SJ201

    Abstract: 2SJ20
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D


    OCR Scan     		PDF 2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    sb30-03p

    Abstract: 3SK181 DSE015 3SK189
    Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251


    OCR Scan     		PDF 2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189

    Untitled

    Abstract: No abstract text available
    Text: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ225 D151MH,

    Untitled

    Abstract: No abstract text available
    Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C


    OCR Scan     		PDF 2SJ226 41293YK

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469

    AX8896

    Abstract: No abstract text available
    Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		PDF 2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896

    Untitled

    Abstract: No abstract text available
    Text: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ230 --10V --20V 31893MH A8-7975

    8897

    Abstract: No abstract text available
    Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


    OCR Scan     		PDF 2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897

    2SJ268

    Abstract: No abstract text available
    Text: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.


    OCR Scan     		PDF EN4237 2SJ268 2SJ268-applied

    2SJ294

    Abstract: 2SJ291
    Text: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ294 O-22QFM 2SJ291

    2SJ257

    Abstract: No abstract text available
    Text: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.


    OCR Scan     		PDF 2SJ257 2SJ257-applied

    2SJ241

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive


    OCR Scan     		PDF 2SJ241 0D2157L,

    2SJ284

    Abstract: marking am
    Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage


    OCR Scan     		PDF EN4220 2SJ284 10/ms, NS4220-3/3 marking am

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

    2SJ211

    Abstract: N15j
    Text: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er


    OCR Scan     		PDF 2SJ211 2SJ211 N15j

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ200