2SJ291
Abstract: No abstract text available
Text: 2SJ291 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC – DC
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2SJ291
220AB
2SJ291
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Hitachi DSA001651
Abstract: No abstract text available
Text: 2SJ291 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ291
O-220AB
Hitachi DSA001651
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2sj322
Abstract: Hitachi DSA001651
Text: 2SJ322 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ322
O-220CFM
2sj322
Hitachi DSA001651
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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2SJ297
Abstract: 2SJ291
Text: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ297
2SJ291
2SJ291
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2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Text: CONTENTS • Index. 4 ■ General Information.
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PM50150K
31Max
2SK2225
2sj150
2sk1058
2SK215 equivalent
2sk135 application note
2SK975 equivalent
2SK2416
2sk135 audio application
2SK135 audio amplifier
2SK2225 equivalent
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2SJ294
Abstract: Hitachi DSA001651
Text: 2SJ294 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ294
O-220FM
2SJ294
Hitachi DSA001651
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j291
Abstract: No abstract text available
Text: 2SJ291 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ291
Symbol-20
j291
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A4080
Abstract: No abstract text available
Text: 2SJ291 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC - DC
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2SJ291
A4080
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SJ291 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter
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2SJ291
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PDF
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2SJ294
Abstract: 2SJ291
Text: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter
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2SJ294
O-22QFM
2SJ291
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2SK1778
Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2SK1778
2SJ177
2SJ295
PF0042
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Untitled
Abstract: No abstract text available
Text: 2SJ322 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ322
2SJ291
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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2SK1778
Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2SK1776
2SJ299
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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Untitled
Abstract: No abstract text available
Text: 2SJ294 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC
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2SJ294
2SJ291
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PDF
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2SJ322
Abstract: No abstract text available
Text: 2SJ322 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC
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2SJ322
2SJ291.
2SJ322
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2SK1151
2SK1152
2SK1862
2SK1863
2SK1155
2SK1157
2SK1313
2SK1314
2SK1540
2SK1541
2SK975 equivalent
k2796
equivalent transistor 2sk
POWER MOS FET 2sj 2sk
.model 2SK216
TRANSISTOR 2SK 1180
SK1626
2SK215 equivalent
DRUM DRIVER
2sj44
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2SJ297
Abstract: No abstract text available
Text: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SJ297
2SJ291
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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PDF
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2SJ299
Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290
Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in
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packag45
2SK1910
2SK1911
2SJ293
2SJ294
T0-220FM
2SJ295
2SK1951
2SK1952
2SJ296
2SJ299
mosfet 740
2SJ292
2sj298
2SJ295
2SJ317
2SJ278
2SJ279
2SJ290
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2sk1299
Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in
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2SJ2-46
2SJ223
2SJ182
2SJ245
2SJ214
2SJ219
2SJ220
2SJ242
2SJ175
2SJ176
2sk1299
2SJ295
2SJ299
transistor 2sk
2SJ278
2SJ279
2SJ290
2SJ291
2SJ292
2SJ298
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2SJ297
Abstract: No abstract text available
Text: 2SJ297 L , 2SJ297 S Silicon P - C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC
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2SJ297
2SJ291
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PDF
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