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    POWER TRANSISTOR BD139 TO 220 Search Results

    POWER TRANSISTOR BD139 TO 220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR BD139 TO 220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd139 application note

    Abstract: power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors


    Original     		PDF M3D100 BD135; BD137; BD139 O-126; BD136, BD138 bd139 application note power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137

    philips power transistor bd139

    Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES


    Original     		PDF M3D100 BD135; BD137; BD139 O-126; BD136, BD138 philips power transistor bd139 BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140

    transistor current booster circuit

    Abstract: pin configuration transistor BD139 SCHEMATIC mda monitor power booster circuit diagram WK4D RLD-65NE iC-WKN current booster schematic BD139 PIN DIAGRAM SCHEMATIC mda
    Text: iC-WK DEMO WK4D DEMO BOARD DESCRIPTION Rev A1, Page 1/3 ORDERING INFORMATION Type Order Designation Description/Options iC-WK Demo iC-WKL Demo iC-WKN Demo WK4D DEMO WKL4D DEMO WKN4D DEMO Evaluation boards for iC-WK, iC-WKL and iC-WKN; easy to set up for the booster circuit


    Original     		PDF

    bd139 3v

    Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V


    Original     		PDF MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad

    BU108

    Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF BUL43B BUL43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100

    BD139 noise

    Abstract: iC-WKL pin configuration transistor BD139 bd139 application note iC-WK BD139 PULSED LASER DIODE DRIVER laser diode BC237 C2100nF
    Text: iC-WK, iC-WKL Application Notes 2.4V CW LASER DIODE DRIVER Release 19.11.02, Page 1/3 CONTENTS 1. Application Notes . . . . . . . . . . . . . . page 1 2. Dimensioning . . . . . . . . . . . . . . . . . page 3 1. APPLICATION NOTES Figure 1 to 3 show the standard configurations of


    Original     		PDF 100nF BD139 noise iC-WKL pin configuration transistor BD139 bd139 application note iC-WK BD139 PULSED LASER DIODE DRIVER laser diode BC237 C2100nF

    TRANSISTOR REPLACEMENT table for transistor

    Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220

    bd135 TRANSISTOR REPLACEMENT GUIDE

    Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


    Original     		PDF BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary

    BU108

    Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE/MJF18009 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100

    NT 407 F TRANSISTOR

    Abstract: BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR
    Text: MOTOROLA Order this document by BUX85/D SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85/D* BUX85/D NT 407 F TRANSISTOR BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR

    BD139 fall time

    Abstract: transistor 400 volts.50 amperes BD139 time
    Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 BD139 BD140 BD139 fall time transistor 400 volts.50 amperes BD139 time

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


    Original     		PDF BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    BU108

    Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


    Original     		PDF 2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419

    MJE3055 to247

    Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original     		PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161

    2sc-144

    Abstract: 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc


    Original     		PDF TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 220AB 2sc-144 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


    Original     		PDF 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		PDF 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


    OCR Scan     		PDF BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330

    smd transistor pnp 591

    Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF BLV857 OT324B smd transistor pnp 591 smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor