POWER TRANSISTOR BD139 TO 220 Search Results

POWER TRANSISTOR BD139 TO 220 Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

POWER TRANSISTOR BD139 TO 220 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
bd139 application note Abstract: power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors	Original	M3D100 BD135; BD137; BD139 O-126; BD136, BD138 bd139 application note power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137	PDF
philips power transistor bd139 Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES	Original	M3D100 BD135; BD137; BD139 O-126; BD136, BD138 philips power transistor bd139 BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140	PDF
transistor current booster circuit Abstract: pin configuration transistor BD139 SCHEMATIC mda monitor power booster circuit diagram WK4D RLD-65NE iC-WKN current booster schematic BD139 PIN DIAGRAM SCHEMATIC mda Text: iC-WK DEMO WK4D DEMO BOARD DESCRIPTION Rev A1, Page 1/3 ORDERING INFORMATION Type Order Designation Description/Options iC-WK Demo iC-WKL Demo iC-WKN Demo WK4D DEMO WKL4D DEMO WKN4D DEMO Evaluation boards for iC-WK, iC-WKL and iC-WKN; easy to set up for the booster circuit	Original		PDF
bd139 3v Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V	Original	MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad	PDF
BU108 Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light	Original	BUL43B BUL43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100	PDF
electronic ballast with MJE13003 Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light	Original	BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100	PDF
BD139 noise Abstract: iC-WKL pin configuration transistor BD139 bd139 application note iC-WK BD139 PULSED LASER DIODE DRIVER laser diode BC237 C2100nF Text: iC-WK, iC-WKL Application Notes 2.4V CW LASER DIODE DRIVER Release 19.11.02, Page 1/3 CONTENTS 1. Application Notes . . . . . . . . . . . . . . page 1 2. Dimensioning . . . . . . . . . . . . . . . . . page 3 1. APPLICATION NOTES Figure 1 to 3 show the standard configurations of	Original	100nF BD139 noise iC-WKL pin configuration transistor BD139 bd139 application note iC-WK BD139 PULSED LASER DIODE DRIVER laser diode BC237 C2100nF	PDF
TRANSISTOR REPLACEMENT table for transistor Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220	PDF
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary	PDF
BU108 Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light	Original	MJE/MJF18009 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100	PDF
NT 407 F TRANSISTOR Abstract: BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR Text: MOTOROLA Order this document by BUX85/D SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	BUX85/D* BUX85/D NT 407 F TRANSISTOR BD139 BD139 h parameters TRANSISTOR NPN BD139 BD139 MOTOROLA BUX85 BD140 BUX84 BD139 TRANSISTOR	PDF
BD139 fall time Abstract: transistor 400 volts.50 amperes BD139 time Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	BUX85 BUX85 BD139 BD140 BD139 fall time transistor 400 volts.50 amperes BD139 time	PDF
2SA1046 Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.	Original	BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100	PDF
bvc62 Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330 Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum	OCR Scan	BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330	PDF

BU108 Abstract: 2SC1629 equivalent BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:	Original	BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100	PDF
2N4922 Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A	Original	BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482	PDF
2SA1046 Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated	Original	2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876	PDF
BU108 Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc	Original	2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419	PDF
MJE3055 to247 Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix	Original	MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100	PDF
BC 458 Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON	Original	MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161	PDF
2sc-144 Abstract: 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc	Original	TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 220AB 2sc-144 2SC105 BUX98A pin configuration NPN transistor tip41c BU326 BU108 BU100	PDF
2SC124 Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436	Original	2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100	PDF
All similar transistor 2sa715 Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc	Original	BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference	PDF
2SA1046 Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc	Original	2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT	PDF

POWER TRANSISTOR BD139 TO 220 Search Results

POWER TRANSISTOR BD139 TO 220 Result Highlights (5)

POWER TRANSISTOR BD139 TO 220 Datasheets Context Search

bd139 application note

philips power transistor bd139

transistor current booster circuit

bd139 3v

BU108

electronic ballast with MJE13003

BD139 noise

TRANSISTOR REPLACEMENT table for transistor

bd135 TRANSISTOR REPLACEMENT GUIDE

BU108

NT 407 F TRANSISTOR

BD139 fall time

2SA1046

bvc62

BU108

2N4922

2SA1046

BU108

MJE3055 to247

BC 458

2sc-144

2SC124

All similar transistor 2sa715

2SA1046