Untitled
Abstract: No abstract text available
Text: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMG7702SFG
POWERDI3333-8
DS35248
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMG7702SFG
POWERDI3333-8
DS35248
|
PDF
|
DMP4015SPS
Abstract: DMP4025LSD
Text: ZXBM1021 SINGLE PHASE VARIABLE SPEED MOTOR CONTROL PRE-DRIVER Pin Assignments The ZXBM1021 is a high performance, low noise, single-phase, VCC For system flexibility the motor speed can be controlled by either an H+ H- speed control and current control suitable for fan and blower motors.
|
Original
|
ZXBM1021
ZXBM1021
DS36322
DMP4015SPS
DMP4025LSD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 8mΩ @ VGS = -4.5V -14A V(BR)DSS -20V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher
|
Original
|
DMP2008UFG
AEC-Q101
DS35694
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 80V 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC = +25°C 35A 30A • Low RDS(ON) – ensures on state losses are minimized • Excellent Qgd x RDS(ON) Product (FOM)
|
Original
|
DMT8012LFG
DS36606
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS 100% Unclamped Inductive Switch (UIS) test in production Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMG7408SFG
AEC-Q101
DS35620
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3029LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits RDS(ON) ID TA = 25°C 18.6mΩ @ VGS = 10V 8.0 26.5mΩ @ VGS = 4.5V 6.5 • • • • • • • 30V Description and Applications
|
Original
|
DMN3029LFG
AEC-Q101
PowerDI3333
DS35448
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A • Occupies just 33% of the board area occupied by SO-8 enabling
|
Original
|
DMG7410SFG
AEC-Q101
DS35108
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMN3024SFG
AEC-Q101
DS35439
|
PDF
|
dmg7401sfg
Abstract: No abstract text available
Text: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON max ID max TA = +25°C 13m• @ VGS = -10V -9.8A 25m• @ VGS = -4.5V -7.0A Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher
|
Original
|
DMG7401SFG
AEC-Q101
DS35623
dmg7401sfg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits Product Summary Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.8A • Occupies just 33% of the board area occupied by SO-8 enabling
|
Original
|
DMG7401SFG
AEC-Q101
DS35623
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMG7408SFG
AEC-Q101
DS35620
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON max ID max TA = +25°C 13mΩ @ VGS = -10V -9.8A 25mΩ @ VGS = -4.5V -7.0A • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher
|
Original
|
DMG7401SFG
DS35623
|
PDF
|
DMN3030LFG
Abstract: No abstract text available
Text: DMN3030LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) Package 30V 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V POWERDI 3333-8 • ID TA = +25°C 8.6A 5.5A Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMN3030LFG
AEC-Q101
DS35499
DMN3030LFG
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMG7702SFG
DS35248
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized
|
Original
|
DMN3024SFG
AEC-Q101
DS35439
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A •
|
Original
|
DMG7410SFG
AEC-Q101
DS35108
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products
|
Original
|
DMN3029LFG
AEC-Q101
DS35448
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMS3012SFG
DS35441
|
PDF
|
DMG7410SFG
Abstract: No abstract text available
Text: DMG7410SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features V BR DSS RDS(ON) 30V 20mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID TA = 25°C 8.0 A 6.5 A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMG7410SFG
AEC-Q101
DS35108
DMG7410SFG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMS3012SFG
DS35441
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP3017SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 10mΩ @ VGS = -10V -11.5A V(BR)DSS -30V Features and Benefits 18mΩ @ VGS = -4.5V • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher
|
Original
|
DMP3017SFG
DS36479
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON ID TA = +25°C 8.5mΩ @ VGS = 10V 30A 10.5mΩ @ VGS = 4.5V 25A V(BR)DSS 30V Features Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher
|
Original
|
DMN3010LFG
AEC-Q101
DS36195
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TC = +25°C 7.5mΩ @ VGS = 10V 60A 11.5mΩ @ VGS = 4.5V 49A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 60V Features and Benefits • Low RDS(ON) – Ensures on State Losses Are Minimized
|
Original
|
DMT6008LFG
DS36680
|
PDF
|