POWERMOS Search Results

POWERMOS Price and Stock

Filter by Manufacturer


ROHM Semiconductor RUF015N02TL MOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RUF015N02TL	Reel	87,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.129	Buy Now
ROHM Semiconductor RV2C010UNT2L MOSFETs 20V 1A Nch Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RV2C010UNT2L	Reel	24,000		8,000	1 - 10 - 100 - 1000 - 10000 $0.066	Buy Now
Vishay Intertechnologies SIR826BDP-T1-RE3 MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIR826BDP-T1-RE3	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.571	Buy Now
Vishay Intertechnologies SIHD1K4N60E-GE3 MOSFETs 600V Vds 30V Vgs DPAK (TO-252)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIHD1K4N60E-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.419	Buy Now
Vishay Intertechnologies SIR122DP-T1-RE3 MOSFETs 80V Vds 20V Vgs PowerPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIR122DP-T1-RE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.348	Buy Now

Find more POWERMOS price and stock on Findchips.com

POWERMOS Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
PowerMOS	Philips Semiconductors	PowerMOS Transistors Understanding the Data Sheet	Original	PDF
Power MOSFET single-shot and repetitive avalanche ruggedness rating	NXP Semiconductors	AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating	Original	PDF
PowerMOS Transistors	Philips Semiconductors	Understanding the Data Sheet	Original	PDF

POWERMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
uu9.8 Abstract: 7D471K 20/UU9.8 Text: UNISONIC TECHNOLOGIES CO., LTD UPS4602 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION DESCRIPTION The UTC UPS4602 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with	Original	PDF	UPS4602 UPS4602 QW-R119-019 uu9.8 7D471K 20/UU9.8
Untitled Abstract: No abstract text available Text: PowerMOSFET Nch •外観図 P6B40HP2 OUTLI NE Package：FB t ：mm Uni 2.3 6.6 400V6A 特長品名略号 Type No. 煙面実装タイプ煙低ノイズ煙低容量 / dt耐量煙高アバランシェ耐量高 di P6B40H2 000000 ロット管理記号（例）	Original	PDF	P6B40H2
Untitled Abstract: No abstract text available Text: PowerMOSFET Nch •外観図 P3B28HP2 OUTLI NE Package：FB t ：mm Uni 6.6 280V3A 2.3 特長品名略号 Type No. 煙面実装タイプ煙低ノイズ煙低容量 / dt耐量煙高アバランシェ耐量高 di P3B28H2 000000 ロット管理記号（例）	Original	PDF	P3B28H2
Untitled Abstract: No abstract text available Text: PowerMOSFET •外観図 F21F60CPM OUTLI NE Package：FTO220A （3pi n）（例）ロット記号 Date code 600V21A t ：mm Uni 4.5 10.０煙高耐圧煙低オン抵抗煙高速スイッチング品名略号 Type No. 15.０管理番号（例） Control No.	Original	PDF	21F60CPM
BUK555-60A Abstract: BUK555-60B T0220AB Text: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in	OCR Scan	PDF	0DbM241 BUK555-60A/B T0220AB BUK555 -ID/100 BUK555-60A BUK555-60B
BUK455-500B Abstract: T0220AB Text: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	BUK455-500B T0220AB 711DflEb BUK455-500B
BUK542 Abstract: BUK542-100A BUK542-100B Text: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL	OCR Scan	PDF	711QSSb BUK542-100A/B -SOT186 BUK542 -100A -100B BUK542-100A BUK542-100B
8uk453 Abstract: BUK453-60A BUK453-60B T0220AB Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B
BUK10B-50US Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106 Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic	OCR Scan	PDF	7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106
BUK426-100B Abstract: transistor BU 110 BUK426-100A Text: Philips Components Data sheet status Product specification date of issue March 1991 PHILIPS 7 - 3 ^ -/ / B U K 4 2 6 - 1OOA/B PowerMOS transistor 5bE T> INTERNATIONAL 7110fl2t 0044120 flSD I_ I GENERAL DESCRIPTION N-channel enhancement mode	OCR Scan	PDF	BUK426-1OOA/B 7110fl2t D0441EG OT199 -100A -100B BUK426-100B transistor BU 110 BUK426-100A
ht 25 transistor Abstract: BUK638-500B Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery	OCR Scan	PDF	BUK638-500B 711DflSb ODb431S ht 25 transistor
NDS 40-20 Abstract: BUK437-500B DIODE BB2 Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2
BUK543 Abstract: BUK543-60A BUK543-60B TTA10 Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack	OCR Scan	PDF	BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10
BUK455-600B Abstract: LG 631 Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	711Gfl2b 0Db4101 BUK455-600B PINNING-T0220AB BUK455-600B LG 631

BUK637-400B Abstract: No abstract text available Text: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable	OCR Scan	PDF	BUK637-400B BUK637-400B
BUK452-100B Abstract: BUK452-100A T0220AB Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	7110fl2b BUK452-100A/B T0220AB BUK452-100B BUK452-100A T0220AB
IL 741 Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101 Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In	OCR Scan	PDF	711Dfl5t, BUK441-100A/B BUK441 -100A -100B -SOT186 IL 741 philips lps 100 BUK441-100A BUK441-100B P101
K438-1000A Abstract: BUK438-1000A BUK438-1000B k4381 Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a	OCR Scan	PDF	BUK438-1OOOA/B 711002b BUK438 -1000A -1000B BUK438-1000A/B 711062b T-39-I5 K438-1000A BUK438-1000A BUK438-1000B k4381
TRANSISTOR BO 344 Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650 Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	7110flSb BUK455-100A/B T0220AB BUK455 -100A -100B TRANSISTOR BO 344 TRANSISTOR BO 341 tny 175 BUK455-100A BUK455-100B data transistor 1650
k426 Abstract: bu 515 BUK426-50A transistor 03e Transistor Bo 17 Text: PHILIPS 5L.E T> INTERNATIONAL 711DÖ2b D D M m i 5 IPHIN Philips Components D ata sheet status Product specification d ate o f issue March 1991 B U K 4 2 6 - 6 0 A /B PowerMOS transistor 7^ 39- t/ Replaces BUK426-50A/B GENERAL DESCRIPTION N-channel enhancement mode	OCR Scan	PDF	BUK426-50A/B K426-60A/B -39-i/ PINNING-SOT199 BUK426 k426 bu 515 BUK426-50A transistor 03e Transistor Bo 17
BUK445-500B Abstract: No abstract text available Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	711062b BUK445-500B -SOT186 BUK445-500B
BUK427-600B Abstract: 18-SO BUK427-600 d0411 Text: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.	OCR Scan	PDF	BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411
buk657-500 Abstract: BUK657-500B T0220AB transistor D 588 Text: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	00b432b BUK657-500B T0220AB buk657-500 transistor D 588
BUK443 Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B Text: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	711Dfi2b BUK443-60A/B OT186 BUK443 BUK443-60A BUK443-60B TRANSISTOR C 557 B

POWERMOS Search Results

POWERMOS Price and Stock

ROHM Semiconductor RUF015N02TL

ROHM Semiconductor RV2C010UNT2L

Vishay Intertechnologies SIR826BDP-T1-RE3

Vishay Intertechnologies SIHD1K4N60E-GE3

Vishay Intertechnologies SIR122DP-T1-RE3

POWERMOS Datasheets (3)

POWERMOS Datasheets Context Search

uu9.8

Untitled

Untitled

Untitled

BUK555-60A

BUK455-500B

BUK542

8uk453

BUK10B-50US

BUK426-100B

ht 25 transistor

NDS 40-20

BUK543

BUK455-600B

BUK637-400B

BUK452-100B

IL 741

K438-1000A

TRANSISTOR BO 344

k426

BUK445-500B

BUK427-600B

buk657-500

BUK443