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    PSPICE MODEL FOR CMOS Search Results

    PSPICE MODEL FOR CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    PSPICE MODEL FOR CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n10l

    Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
    Text: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334

    tt 2246

    Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
    Text: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using


    Original     		PDF RFD14N05L, RFD14N05LSM, RFP14N05L TA09870. tt 2246 Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L

    16n06l

    Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027

    FP42N03L

    Abstract: f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A
    Text: RFP42N03L, RF1S42N03LSM Data Sheet 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		PDF RFP42N03L, RF1S42N03LSM FP42N03L f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A

    mosfet motor dc 48v

    Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using


    Original     		PDF RFD14N06L, RFD14N06LSM, RFP14N06L TA09870. mosfet motor dc 48v 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334

    16N03

    Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
    Text: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.


    Original     		PDF RFD16N03L, RFD16N03LSM TA49030. 16N03 TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334

    7N10LE

    Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
    Text: RFD7N10LE, RFD7N10LESM, RFP7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 7N10LE FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13

    bsim3 model

    Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
    Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications


    Original     		PDF

    7n10le

    Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
    Text: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected


    Original     		PDF RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 1-800-4-HARRIS 7n10le AN7254 AN7260 RFD7N10LE pspice model for ttl TC247

    FP45N03L

    Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
    Text: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFP45N03L, RF1S45N03L, RF1S45N03LSM O-220AB O-262AA RF1S45N03LSM 1e-30 95e-4 FP45N03L F45N03L fp45n03 RFP45N03L TA49030 F45N03 relay 24v 30a AN7254 AN7260

    FP45N03L

    Abstract: fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss
    Text: [ /Title RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M /Subject (45A, 30V, 0.022 Ohm, RFP45N03L, RF1S45N03L, RF1S45N03LSM Semiconductor 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A, 30V • Peak Current vs Pulse Width Curve


    Original     		PDF RFP45 RF1S45 N03LS RFP45N03L, RF1S45N03L, RF1S45N03LSM 1e-30 95e-4 82e-3 FP45N03L fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss

    16n03l

    Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
    Text: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD16N03L, RFD16N03LSM O-251AA O-252AA RFD16N03L RFD16N03LSM 1e-30 95e-4 92e-3 29e-5) 16n03l 16N03 RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322

    Untitled

    Abstract: No abstract text available
    Text: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and


    OCR Scan     		PDF RFD14N05L, RFD14N05LSM, RFP14N05L TB334 TA09870.

    Untitled

    Abstract: No abstract text available
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Semiconductor April 1999 Data Sheet 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL


    OCR Scan     		PDF RFD14N06L, RFD14N06LSM, RFP14N06L TB334 TA09870. RFD14N06L O-251AA 14N06L RFD14N06LSM O-252AA

    Untitled

    Abstract: No abstract text available
    Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB


    OCR Scan     		PDF 430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9

    Solenoid Drivers

    Abstract: IBM 286 schematic relay spice model
    Text: Micrel Semiconductor MPD8020 ASIS Design Package Overview 5-20 MiereI MPD8020 MPD8020 ASIS™ Advantages CMOS/DMOS Semicustom Array Switch Mode Power Supplies • Start with your circuit design needs 25 to 100V operation. Sm all size, up to 1MHz switching. Full and half Hbridge configurations.


    OCR Scan     		PDF MPD8020 MPD8020 Solenoid Drivers IBM 286 schematic relay spice model

    Untitled

    Abstract: No abstract text available
    Text: RFD7N10LE, RFD7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 75e-3

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFD16N06LE, RFD16N06LESM

    p30N06LE

    Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
    Text: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN


    OCR Scan     		PDF RFP30N06LE O-220AB RFP30N06LE 07e-3 03e-7) 38e-3 64e-5) 75e-3 90e-6) p30N06LE P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0

    Untitled

    Abstract: No abstract text available
    Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM 96e-9 1e-30 95e-4 92e-3 29e-5) 03e-3 45e-5)

    f45n03l

    Abstract: FP45N03L
    Text: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFP45N03L, RF1S45N03L, RF1S45N03LSM TA49030. Temperat96e-9 1e-30 95e-4 82e-3 17e-5) 03e-3 f45n03l FP45N03L

    f42n03l

    Abstract: No abstract text available
    Text: ? *3 2 S RFP42N03L, RF1S42N03L, RF1S42N03LSM 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 42A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFP42N03L, RF1S42N03L, RF1S42N03LSM TA49030. 0-025i2 Tem96e-9 1e-30 95e-4 82e-3 17e-5) f42n03l

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFD7N10LE, RFD7N10LESM, RFP7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5)

    16n06l

    Abstract: pspice model for ttl
    Text: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected


    OCR Scan     		PDF RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl