TV IR remote control circuit diagram
Abstract: thomson TV IR remote control circuit diagram universal remote transistor K52 transistor k61 transistor k58 gate control remote Universal electronics tv remote control circuit transistor k54 ZILOG Z8 tv remote
Text: Application Note Simple Infrared Remote Control Reference Design AN024003-0208 Abstract Family Overview At present, the consumer electronics industry has no widely accepted standards governing infrared IR transmission schemes used by manufacturers of consumer products. Each manufacturer is free to
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AN024003-0208
TV IR remote control circuit diagram
thomson TV IR remote control circuit diagram
universal remote
transistor K52
transistor k61
transistor k58
gate control remote
Universal electronics tv remote control circuit
transistor k54
ZILOG Z8 tv remote
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Untitled
Abstract: No abstract text available
Text: AUDIO RCA JACK RIGHT ANGLED SOCKET SECTION 6 Competitively priced Industry Compatible PCB Mounting SPECIFICATION Contact resistance DCR 0.1A 1, InItial, before any testing: 2, After life test with mating plug: Insertation Force: Extraction Force: Soldering Heat:
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16vdc
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TV Wireless Mini
Abstract: wireless vga circuit receiver transmitter 1.2 ghz video 15 pin vga to video out rca video vga to composite convert radio av receiver wireless av transmitter video transmitter 2.4 GHz portable dvd player vga to rca circuit
Text: AITech ProPC/TV Wireless Mini USER’S MANUAL FEDERAL COMMUNICATIONS COMMISSION This device complies with Part 15 of the FCC Rules Operation is subject to the following two conditions: this device may not cause harmful interference, and 2 this device must accept any interference received, including interference that
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15pin
TV Wireless Mini
wireless vga circuit
receiver transmitter 1.2 ghz video
15 pin vga to video out rca
video vga to composite convert
radio av receiver
wireless av transmitter
video transmitter 2.4 GHz
portable dvd player
vga to rca circuit
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74AC245
Abstract: 74ac logic
Text: Product Selectora Packages Typical Dual-In-Line Plastic Package Typical SO Small Outline Plastic Package Ordering Information CD RCA Advanced CMOS Digital Logic 74AC 245 J Temperature Range Family. 74AC = Commercial Advanced CMOS 54AC = Military Advanced CMOS
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74ACT
54ACT
24-Lead
74AC245
74ac logic
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varian klystron
Abstract: UG-573 varian klystron x 13 RCA-884 klystron s band klystron S-band klystron klystron varian varian flange WR284 tl358
Text: - ouæzo - •* ' *■ - t*-»' c '<?> V •> Electronic Components J - - T -. ' ' f :A . ■ 1' • ; w Klystron ^ X : ; ; v: 8840 1 v ’ 3 6 ^-4,. S-Band High Power Klystron Pulse Amplifier Service Factory Fixed Tuned Water Cooled 28 Megawatts Peak Pulse Output
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RCA-8840
AN-4737
1CE-279
IEN-3606
AJ2117V2,
TL3584
TL3585
varian klystron
UG-573
varian klystron x 13
RCA-884
klystron s band
klystron S-band
klystron
klystron varian
varian flange WR284
tl358
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C30971EL
Abstract: C30971 RCA Solid State Scans-002209 rca 036 C30971E RCA Solid State power devices
Text: E G & G/CANADA/OPTOELEK RC/1 30 30 bl0 ÜD D0S 54 H D H « C A N A T~- EH *£/- S ' / Solid State Detectors Electro Optics and Devices Developmental'Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications • Spectral Response Range - 10% Points - 400 to 1000 nm
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3030bl0
DD0B54
C30971
C30971E
C30971EL
C30971EL
RCA Solid State
Scans-002209
rca 036
RCA Solid State power devices
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C30971EL
Abstract: No abstract text available
Text: E G & G/CANADA/O PTOE LEK ItC JI 303Qbl0 ÜDDDBS4 TDT • CANAT"'- ET Electro Optics and Devices 4^/- S ' / Solid State Detectors Developmental Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications ■ Spectral Response Range - 10% Points - 400 to 1000 nm
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303Qbl0
C30971
C30971E
C30971EL
C30971EL
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C30116
Abstract: RCA Solid State C30116/F
Text: E G & G/CANADA/OPTOELEK 3D3GblO G00D013 SSM « C A N A ID • W f f e J V Electro Optics l l l i f I and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous DC Operation
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G00D013
C30116,
C30116/F
C30116
C30116/F
C30116
RCA Solid State
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm
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3030bl0
C30957E
C30957E
t455-6191
ED-0032/10/88
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RCA 014
Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
Text: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si Photodiode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn
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3D30hl0
C30974E
C30974E
12-lead
ED-0034/10/88
RCA 014
emitter "1060 nm"
rca linear
"photodiode " 011
photodiode Avalanche photodiode
avalanche photodiode bias
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rca 036
Abstract: C30957E photodiode demodulation
Text: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm
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3030bl0
C30957E
C30957E
ED-0032/10/88
rca 036
photodiode demodulation
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.
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C30895
C30895
ED-0028/10/88
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Untitled
Abstract: No abstract text available
Text: E G & G / CANADA/OPTOELEK IO D a o a O b l D DDDD1S7 7 3 7 B C A N A VtCil Optics Si Photodiode C30974E DATA SHEET Rectangular Silicon Avalanche Photodiode Preamplifier Module • Responsivity at TA « 25°C 3.7 x 10s V/W at 900 nm — 1.8 x 10s V/W at 1060 mn
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C30974E
C30974E
ED-0034/10/88
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090Q
Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Text: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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303dbl0
C30998
--H/-67
C30998-XXXQC-YY
L-1075
C30998-XXX
14-pin
C30902)
ED-0016/02/88
090Q
PREAMPLIFIER TRANSIMPEDANCE optic fet
C30902
rca 514
QC-04
30080 46
spectran
C30998-010
C30998-250
303Db
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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C30817
Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30fc
001Q5
C30817
Range--40Â
C30817
ED-0030/10/88
RCA C30817
LXA 102 103
PTS 400
C3081
QQG0107
921S-4
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photodioda
Abstract: N10-13 laser rca rca 210 C30895
Text: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.
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4fi4b75
C30895
C30895
ED-0028/10/88
photodioda
N10-13
laser rca
rca 210
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Untitled
Abstract: No abstract text available
Text: ; 8. 6 / C A N A D A / O P T O E L E K n • m lOE D 3D3üblG OOQOOn ô ■ CANA 7^/-¿>7 ÆM Electro W # InGaAsP Infrared Emitters ■ Optics 1300 nm L E D S E R IES DATA S H EET C86057E SERIES - Dual-in-Line package Single or multimode fiber C86013E - Coaxial package multimode fiber
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C86057E
C86013E
C86054E
55/xW
1300nm
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tic 1060
Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Text: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.
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C30895
Range--46Â
C30895
ED-0028/10/88
tic 1060
rca 923
5252 F led
rca 514
5252 F
5252 S
RCA 411
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C30817
Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications
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ISO-9001-87
C30954E,
C30955E,
C30956E
C30954E
C30955E
C30956E
C30817
ISO-9001-87
C30872
C30916E
c30954
C30956
c30955e
avalanche photodiodes
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RCA Solid State
Abstract: No abstract text available
Text: CM IMM] O CO Linear Integrateci Circuits Solid State Division Monolithic Silicon <D -Q E CA3216E <1 Preliminary Data Chroma Processor Features • Voltage controlled oscillator with wide deviation and constant output voltage ■ A ll frequency conversion on single chip
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CA3216E
H-185S
24-Lead
CA3216E*
CA3216E
1CE-402,
RCA Solid State
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Untitled
Abstract: No abstract text available
Text: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails
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OCR Scan
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303GblÃ
C30620
14-pin
C30620QC-YY-XXX
C30620-XXX
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors
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303DblQ
C86051E
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