IC 571
Abstract: 118-70-74-591 394-70-74-591 LM335 OM350
Text: Cooled - Large Area APDs Electro-Optical Characteristics All specifications apply when APD is operated at 0ºC and at a gain of 300. 3 mm Active Diameter Bias Voltage Range† mm 3 5 10 16 (V) 1700 to 2000 Temperature Capacitance Dark Current Rise Time Noise Current
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100kHz
675nm
118the
LM335
350nm.
IC 571
118-70-74-591
394-70-74-591
OM350
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-500-TO52
Avalanche photodiode APD
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nir source
Abstract: No abstract text available
Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-230-TO52
nir source
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APD500-LCC
Abstract: No abstract text available
Text: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD500-LCC
APD500-LCC
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APD230-LCC
Abstract: No abstract text available
Text: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD230-LCC
APD230-LCC
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Untitled
Abstract: No abstract text available
Text: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)
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SSO-AD-800-TO5i
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Untitled
Abstract: No abstract text available
Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-500-TO52
50oltage
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SSO-AD-500-TO52i
Abstract: No abstract text available
Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-500-TO52i
SSO-AD-500-TO52i
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Untitled
Abstract: No abstract text available
Text: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)
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SSO-AD-1100-TO5i
1130m
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avalanche photodiode noise factor
Abstract: No abstract text available
Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52i
avalanche photodiode noise factor
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-230-TO52
Avalanche photodiode APD
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MAX3726
Abstract: analog PIN Photodiode 3GHz
Text: 19-3386; Rev 0; 8/04 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ Low 115mW Power Consumption ♦ 16-Pin QFN Package with 3mm x 3mm Footprint ♦ 70ps Rise and Fall Time ♦ Loss-of-Signal with Programmable Threshold
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622Mbps
115mW
16-Pin
MAX3744/MAX3724
MAX3746
MAX3744/
MAX3724
SFF-8472
MAX3748A
MAX3726
analog PIN Photodiode 3GHz
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TO52
Abstract: SSO-AD-230-TO52-S1
Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52-S1
TO52
SSO-AD-230-TO52-S1
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Untitled
Abstract: No abstract text available
Text: SSO-AD-1900-TO5i SSO-AD-2500-TO5i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 1900 or 2500 µm diameter active area low capacitance Parameters: SSO-AD-1900 TO5i active area 1950 mm ∅ 3,0 µm 2520 mm ∅ 5,0 µm
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SSO-AD-1900-TO5i
SSO-AD-2500-TO5i
SSO-AD-1900
SSO-AD-2500
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10G APD chip
Abstract: Photodiode apd RSSI 10G APD DS1858 MAX3744 MAX3748 MAX3748A MAX3748AETE MAX3748ETE
Text: 19-2717; Rev 1; 7/03 KIT ATION EVALU E L B AVAILA Compact 155Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ 16-Pin QFN Package with 3mm ✕ 3mm Footprint ♦ Single +3.3V Supply Voltage ♦ 86ps Rise and Fall Time A received-signal-strength indicator RSSI is available
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155Mbps
16-Pin
MAX3748/MAX3748A
MAX3744
MAX3744*
MAX3748/
MAX3748A
MAX3748/MAX3748A
10G APD chip
Photodiode apd RSSI
10G APD
DS1858
MAX3748
MAX3748AETE
MAX3748ETE
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300-pin
Abstract: 300pin msa dwdm TPD-MR-04-XXXXXXXX
Text: TPD-MR-04-XXXXXXXX Features Description Compliant with the 300 pin SFF MSA TPD-MR-04-XXXXX C-band DWDM 300 pin SFF Support multi-rate from 9.953Gb/s to 11.3Gbps transponder C-band DWDM laser and PIN/APD receiver applications with reaches of up to 40km, which
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TPD-MR-04-XXXXXXXX
953Gb/s
100GHz
800ps/nm
16-bit
08Mbps
TPD-MR-04-XXXXX
95Gbps
10Gbit/s
86-28-8795-8788Fax:
300-pin
300pin msa dwdm
TPD-MR-04-XXXXXXXX
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10G APD RX
Abstract: No abstract text available
Text: Preliminary Datasheet TPD-MR-08-34CDL5A Features Description z Compliant with the 300 pin SFF MSA TPD-MR-08-34CDL5A z Support multi-rate from 9.953Gb/s to 11.3Gbps transponder is intended for SONET/SDH system z C-band DWDM laser and PIN/APD receiver applications with reaches of up to 80km, which
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TPD-MR-08-34CDL5A
953Gb/s
100GHz
1600ps/nm
16-bit
08Mbps
TPD-MR-08-34CDL5A
95Gbps
10Gbit/s
86-28-8795-8788Fax:
10G APD RX
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C30737LH-500-92
Abstract: CERAMIC LEADLESS CHIP CARRIER
Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,
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C30737PH
C30737LH
C30737
C30737PH-LH-Rev
C30737LH-500-92
CERAMIC LEADLESS CHIP CARRIER
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Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30817com.
diode d1n914
d1n914 DIODE
d1n914
C30817E
C30659-1550-R2A
InGaas PIN photodiode, 1550 NEP
C30950
Silicon and InGaAs APD Preamplifier Modules
C30954E
avalanche photodiode 1550nm sensitivity
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C30817E
Abstract: No abstract text available
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30om.
C30817E
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EG*G Optoelectronics
Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c
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C30724P
900nm
C30724P
EG*G Optoelectronics
C30724
EG&G
VS289
MIL-Q-9858A
Si apd photodiode 800 nm
EG&G optoelectronics
apd bias 200v
eg&g HUV-1100
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MY9221
Abstract: MY-Semi
Text: MY9221 MY-Semi 12-Channel LED Driver With Grayscale Adaptive Pulse Density Modulation Control General Description Features The MY9221, 12-channels R/G/B x 4 c o n s t a n t current APDM (Adaptive Pulse Density M o d u l a t i o n ) LED driver, operates over a 3V ~ 5.5V
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MY9221
12-Channel
MY9221,
12-channels
MY9221
16r/crime-prevention
MY-Semi
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APDS-9005
Abstract: Ambient Light Sensor APDS-9005-020 photo sensor 700 PHOTO SENSOR of application SMD LQ3 APDS9005 makrolon photo resistor light
Text: APDS-9005 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Description Features The APDS-9005 is a low cost analog-output ambient light photo sensor in miniature chipLED lead-free surface mount package. It consists of a photo sensor, whose spectral response is close to the CIE standard photopic
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APDS-9005
APDS-9005
100Hz.
AV01-0598EN
AV02-0080EN
Ambient Light Sensor
APDS-9005-020
photo sensor 700
PHOTO SENSOR of application
SMD LQ3
APDS9005
makrolon
photo resistor light
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