RJK0204DPA Search Results

RJK0204DPA Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0204DPA-00#J53		Renesas Electronics Corporation	P Channel Power MOSFET
RJK0204DPA-00#J5A		Renesas Electronics Corporation	P Channel Power MOSFET

RJK0204DPA Price and Stock

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Rochester Electronics LLC RJK0204DPA-00-J53 MOSFET N-CH 25V 50A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0204DPA-00-J53	Bulk			296	1 - 10 - 100 - 1000 $1.02 10000 $1.02	Buy Now
Rochester Electronics LLC RJK0204DPA-WS-J53 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0204DPA-WS-J53	Bulk			296	1 - 10 - 100 - 1000 $1.02 10000 $1.02	Buy Now
Renesas Electronics Corporation RJK0204DPA-09-J53
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	RJK0204DPA-09-J53		128			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJK0204DPA-00#J53 N-Channel Power MOSFET with Schottky Barrier Diode '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJK0204DPA-00#J53		3,000		1	1 $0.9778 10 $0.9778 100 $0.9191 1000 $0.8311 10000 $0.8311	Buy Now
Renesas Electronics Corporation RJK0204DPA-WS#J53 N-Channel Power MOSFET with Schottky Barrier Diode '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJK0204DPA-WS#J53		1,950		1	1 $0.9778 10 $0.9778 100 $0.9191 1000 $0.8311 10000 $0.8311	Buy Now

RJK0204DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK0204DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 50A WPAK		Original	PDF

RJK0204DPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0204DPA 25V, 50A, 2.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current	Original	PDF	RJK0204DPA R07DS0944EJ0400 PWSN0008DE-A
RJK0204DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	PDF	RJK0204DPA REJ03G1922-0210 PWSN0008DC-A current9044 RJK0204DPA
RJK0204DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0204DPA 25 V, 50 A, 2.7 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0944EJ0300 Previous: REJ03G1922-0210 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive	Original	PDF	RJK0204DPA R07DS0944EJ0300 REJ03G1922-0210) PWSN0008DC-B RJK0204DPA
RJK0204DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	PDF	RJK0204DPA REJ03G1922-0210 PWSN0008DC-A Chann9044 RJK0204DPA
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	PDF	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652