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    RJP30E3DPP Search Results

    RJP30E3DPP Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJP30E3DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
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    RJP30E3DPP Price and Stock

    Rochester Electronics LLC RJP30E3DPP-M0-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP30E3DPP-M0-T2 Bulk 98
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    • 100 $3.07
    • 1000 $3.07
    • 10000 $3.07
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    Renesas Electronics Corporation RJP30E3DPP-M0#T2

    Silicon N Channel IGBT High Speed Power Switching
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJP30E3DPP-M0#T2 12,309 109
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    • 1000 $3.1375
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    Rochester Electronics RJP30E3DPP-M0#T2 12,309 1
    • 1 $2.95
    • 10 $2.95
    • 100 $2.77
    • 1000 $2.51
    • 10000 $2.51
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    RJP30E3DPP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-220FL

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) TO-220FL

    rjp30

    Abstract: RJP30E
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) rjp30 RJP30E

    RJP30E3

    Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
    Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ


    Original     		PDF RJP30E3DPP-M0 O-220FL R07DS0353EJ0200 PRSS0003AF-A) O-220FL) RJP30E3 RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram