1501-12
Abstract: ac 1501-12 V53C664H
Text: V53C664H 64K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM MOSEL VITELIC V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC) 30 ns 32 ns 34 ns
|
Original
|
PDF
|
V53C664H
V53C664H
16-bit
1501-12
ac 1501-12
|
Untitled
Abstract: No abstract text available
Text: I 4’ 8M E Gx32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D432 X MT16D832(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 16MB (4 M eg x 32) and 32M B (8 M eg x 32)
|
OCR Scan
|
PDF
|
MT8D432
MT16D832
72-pin,
048-cycle
|
Untitled
Abstract: No abstract text available
Text: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation
|
OCR Scan
|
PDF
|
GDDS311
V104J8/9
104J8/9
30-lead
b3533Tl
|
bul 810 TH
Abstract: No abstract text available
Text: b2E » MOSEL-VITELIC MOSEL- VITELIC • basaa'ìi o D o s a ^ ò «movi V100J9 and V100J8 1M X 9, 1 M X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (t0AA)
|
OCR Scan
|
PDF
|
V100J9
V100J8
V100J8/9
60/60L
70/70L
80/80L
V100J8/9L
V100J8/9-80
bul 810 TH
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I DRAM 1 MEG, 2 MEG x 32 R J I A n i •■ C IV IU U U L E Z 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO p a g e m o d e FEATURES 72-Pin SIMM (DD-11) 1 Meg x 32 - TSOP version (shown)
|
OCR Scan
|
PDF
|
72-Pin
DD-11)
DD-10)
DD-12)
|
Untitled
Abstract: No abstract text available
Text: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)
|
OCR Scan
|
PDF
|
MT2D25632
MT4D51232
72-pin
512-cycle
|
RL10V
Abstract: No abstract text available
Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and
|
OCR Scan
|
PDF
|
V104J232
72-lead
V104J232
RL10V
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC PR ELIM IN A R Y V53C16256H 25 6K x 16 FA S T PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)
|
OCR Scan
|
PDF
|
V53C16256H
16-bit
40-Pin
40/44L-Pin
|
Untitled
Abstract: No abstract text available
Text: |U |IC Z R O N MT2LDT132H X (L), MT4LDT232H(X)(L) 1 MEG, 2 MEG x 32 DRAM MODULES SMALL-OUTLINE 1 MEG, 2 MEG x 32 ORAM M O DULE 4, 8 M EGABYTE, 3.3V, O PTIO NAL E X T E N D E D R E F R E S H , FAST PAGE O R EDO PAGE M ODE FEATURES PIN ASSIGNMENT (Front View)
|
OCR Scan
|
PDF
|
MT2LDT132H
MT4LDT232H
72-pin,
506mW
024-cycle
0G13bfi4
|
104J32
Abstract: No abstract text available
Text: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as
|
OCR Scan
|
PDF
|
V104J32,
V104J36
V104J32
72-lead
V104J32/36
104J32
|
T2D 17 69
Abstract: No abstract text available
Text: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts
|
OCR Scan
|
PDF
|
72-pin,
024-cy
T2D 17 69
|
EDO DRAM
Abstract: MT4C4007JDJ-6L MT4C4007JDJ-6
Text: 1 MEG x 4 EDO DRAM V IIC Z R C H V S DRAM M T4C 4007J FEATURES PIN ASSIGNMENT (Top View Single+5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#
|
OCR Scan
|
PDF
|
4007J
024-cycle
128ms
20/26-Pin
128ms
EDO DRAM
MT4C4007JDJ-6L
MT4C4007JDJ-6
|
MT16D832-6/7
Abstract: No abstract text available
Text: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)
|
OCR Scan
|
PDF
|
MT8D432
MT16D832
72-pin,
448mW
048-cycle
MT16D832-6/7
|
Untitled
Abstract: No abstract text available
Text: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),
|
OCR Scan
|
PDF
|
MT2LDT132H
MT4LDT232H
MT8LDT432H
72-pin,
024-cycle
048-cycle
128ms
|
|
|
Untitled
Abstract: No abstract text available
Text: M O S E L V TTE U C PRELIMINARY V104J32 256K x 32 SIMM Features Description • ■ ■ ■ ■ ■ The V 104J32 Mem ory Module is organized as 262,144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The x32 modules are ideal for use
|
OCR Scan
|
PDF
|
V104J32
104J32
72-lead
|
MT3D19
Abstract: MT3D mt4c1024d
Text: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical
|
OCR Scan
|
PDF
|
MT3D19
30-pin
625mW
024-cycle
MT3D19M-6
MT3D
mt4c1024d
|
RRH cl2
Abstract: 4c1024dj MT3D19 T3D19 MT301 MT3019
Text: 1 MEG X 9 DRAM MODULE SEMICONDUCTOR ihC. 1 MEG X 9 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 9mW standby; 625mW active, typical
|
OCR Scan
|
PDF
|
30-pin
625mW
024-cycle
MT3019
MT3D19
RRH cl2
4c1024dj
T3D19
MT301
|
Untitled
Abstract: No abstract text available
Text: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514400JL/ZL
TC514400JL/ZL-80
TC514400JL/ZL--
|
Untitled
Abstract: No abstract text available
Text: 1 MEG X 4 FPM DRAM ¡M I C R O N DRAM MT4C4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
024-cycle
MT4C4001J)
128ms
MT4C4001J
MT4C4001J
20/26-Pin
|
Untitled
Abstract: No abstract text available
Text: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4
|
OCR Scan
|
PDF
|
TC514400J/Z
TC514400J/Zâ
l7240
T-46-23-18
|
micron dram module 72pin simm
Abstract: No abstract text available
Text: fl/lir -C a r -IM « MT12D436, MT24D836 4 MEG, 8 MEG x 36 DRAM MODULES DRAM 4 MEG, 8 MEG x 36 M 16, 321 16 ’ 3 2 M EG A BY T E’ 5 V ’ FA ST PAGE MODE O D U L E FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,
|
OCR Scan
|
PDF
|
MT12D436,
MT24D836
72-pin,
360mW
048-cycle
micron dram module 72pin simm
|
VG264265
Abstract: VG264265BJ VG264265B 264265BJ VG26426
Text: V G 264265BJ 262,144 x 16-Bit CMOS Dynamic RAM Description T h e device is C M O S Dynam ic RA M organized as 2 6 2 ,1 4 4 words X 16 bits with extended data out access m ode. It is fabricated with an advanced submicron C M O S technology and advanced C M O S circuit design technologies. It is packaged in JE D E C standard 40-pin
|
OCR Scan
|
PDF
|
264265BJ
16-Bit
40-pin
35/40/45/50ns
1G5-0017
VG264265
VG264265BJ
VG264265B
VG26426
|
Untitled
Abstract: No abstract text available
Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,
|
OCR Scan
|
PDF
|
MT8D132
MT16D232
72-pin,
824mW
024-cycle
|
Untitled
Abstract: No abstract text available
Text: FPM DRAM TECHNOLOGY, INC. DRAM MT4LC2M8B1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- and industry-standard x8 pinouts, timing, functions and packages
|
OCR Scan
|
PDF
|
048-cycle
28-Pin
|