RRH CL2 Search Results

Contextual Info: I 4’ 8M E Gx32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D432 X MT16D832(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 16MB (4 M eg x 32) and 32M B (8 M eg x 32)

1501-12

Abstract: ac 1501-12 V53C664H
Contextual Info: V53C664H 64K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM MOSEL VITELIC V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC) 30 ns 32 ns 34 ns

Contextual Info: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation

bul 810 TH

Contextual Info: b2E » MOSEL-VITELIC MOSEL- VITELIC • basaa'ìi o D o s a ^ ò «movi V100J9 and V100J8 1M X 9, 1 M X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (t0AA)

Contextual Info: PRELIMINARY MICRON MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I DRAM 1 MEG, 2 MEG x 32 R J I A n i •■ C IV IU U U L E Z 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO p a g e m o d e FEATURES 72-Pin SIMM (DD-11) 1 Meg x 32 - TSOP version (shown)

Contextual Info: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)

RL10V

Contextual Info: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and

Contextual Info: M O S E L V IT E L IC PR ELIM IN A R Y V53C16256H 25 6K x 16 FA S T PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

Contextual Info: |U |IC Z R O N MT2LDT132H X (L), MT4LDT232H(X)(L) 1 MEG, 2 MEG x 32 DRAM MODULES SMALL-OUTLINE 1 MEG, 2 MEG x 32 ORAM M O DULE 4, 8 M EGABYTE, 3.3V, O PTIO NAL E X T E N D E D R E F R E S H , FAST PAGE O R EDO PAGE M ODE FEATURES PIN ASSIGNMENT (Front View)

104J32

Contextual Info: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as

T2D 17 69

Contextual Info: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts

EDO DRAM

Abstract: MT4C4007JDJ-6L MT4C4007JDJ-6
Contextual Info: 1 MEG x 4 EDO DRAM V IIC Z R C H V S DRAM M T4C 4007J FEATURES PIN ASSIGNMENT (Top View Single+5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#

MT16D832-6/7

Contextual Info: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)

Contextual Info: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),

Contextual Info: M O S E L V TTE U C PRELIMINARY V104J32 256K x 32 SIMM Features Description • ■ ■ ■ ■ ■ The V 104J32 Mem ory Module is organized as 262,144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The x32 modules are ideal for use

MT3D19

Abstract: MT3D mt4c1024d
Contextual Info: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical

RRH cl2

Abstract: 4c1024dj MT3D19 T3D19 MT301 MT3019
Contextual Info: 1 MEG X 9 DRAM MODULE SEMICONDUCTOR ihC. 1 MEG X 9 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 9mW standby; 625mW active, typical

Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as

Contextual Info: 1 MEG X 4 FPM DRAM ¡M I C R O N DRAM MT4C4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply

Contextual Info: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4

micron dram module 72pin simm

Contextual Info: fl/lir -C a r -IM « MT12D436, MT24D836 4 MEG, 8 MEG x 36 DRAM MODULES DRAM 4 MEG, 8 MEG x 36 M 16, 321 16 ’ 3 2 M EG A BY T E’ 5 V ’ FA ST PAGE MODE O D U L E FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin,

VG264265

Abstract: VG264265BJ VG264265B 264265BJ VG26426
Contextual Info: V G 264265BJ 262,144 x 16-Bit CMOS Dynamic RAM Description T h e device is C M O S Dynam ic RA M organized as 2 6 2 ,1 4 4 words X 16 bits with extended data out access m ode. It is fabricated with an advanced submicron C M O S technology and advanced C M O S circuit design technologies. It is packaged in JE D E C standard 40-pin

Contextual Info: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

Contextual Info: FPM DRAM TECHNOLOGY, INC. DRAM MT4LC2M8B1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- and industry-standard x8 pinouts, timing, functions and packages