BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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Untitled
Abstract: No abstract text available
Text: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a
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O126/SOT82
OT186/A;
T0220AB)
OT199/SOT429
/SOT339
T0126/S0T82
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Untitled
Abstract: No abstract text available
Text: MOUNTING INSTRUCTIONS page TO126/SOT82 616 SOT186/A; T0220AB 620 SOT199/SOT429/TOP3D 624 Philips Semiconductors Mounting Instructions T0126/S0T82 GENERAL DATA AND INSTRUCTIONS General rules 1. Fasten the device to the heatsink before soldering the leads. 2. Avoid stress to the leads.
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O126/SOT82
OT186/A;
T0220AB
OT199/SOT429/TOP3D
T0126/S0T82
199/SOT429/TOP3D
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2SC4630LS
Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )
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T0-220FI
T0-220.
diffus-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
2SC4630LS
2SC4631LS
2SC4632LS
2SC4633LS
2SC4634LS
2SC4635LS
2SC4636LS
2SC4637LS
2SC4710LS
T0-126ML
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bSE D • bbSB'lBl QQSflSb3 ^36 « A P X Philips Sem iconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
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BUW14
005flSfc
bb53131
S0T82
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BUX100
Abstract: transistor ""
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
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BUX100
100mA
7110flBb
DD77647
DD776M6
BUX100
transistor ""
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BUX86P
Abstract: BUX 88 BUX 88 S bux c BUX87P bux 86p
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
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BUX86P
BUX87P
711002b
BUX86P
BUX 88
BUX 88 S
bux c
BUX87P
bux 86p
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sanyo transistor tt series
Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.
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becom-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
sanyo transistor tt series
TO225 LEAD FORMING
TRANSISTORS SANYO
sanyo transistor
SSFP package
2SB1269
2SB1449
2SB1450
2SC5264
2SC5420
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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C4106 transistor
Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower
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T0-220MF
O-220
Ratings/Ta-25
T0-220)
2SB1267
2SD1903
D1235
2SB1268
2SD1904
C4106 transistor
C4106
transistor c3457
B824 transistor
c4106 semiconductor
transistor c3447
transistor c4106
transistor d1061
D1060
d1061
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SPD221P
Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).
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SGD102,
SGD102T)
Ratings-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
SPD221P
SPD221R
sanyo transistor
SGD102
SGD102T
SPD121
MCP6 Marking sanyo
SPD121P
SPD122P
SPD221
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p217s
Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate
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SGSP216/P217
SGSP316/P317
SGSP516/F517
OT-82
SGSP216
SGSP217
T0-220
SGSP316
SGSP317
SGSP516
p217s
p317
w55c
p217
ic 17358
17356
C82 to-220
DIODE C06 15
C82J
W25-C
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F527S
Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.
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Cas-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
F527S
2sc55
marking WMM
2SC5488
2SC4853
2SC4931
2SC5277
2SC5374
2SC5489
2SC553
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T410
Abstract: No abstract text available
Text: T 410 T 435 r = 7 S G S -T H O M S O N ^ T # s E â D Ê ^ O IH ü Ê T O iO Ê S HIGH PERFORMANCE TRIACS FEATURES • ITRMS = 4 A ■ V drm = 400 V to 800 V . SENSITIVE GATE : Iq t s iomA . HIGH COMMUTATION : dl/dt c > 3.5 A/ms DESCRIPTION The T410 / T435 high voltage TRIAC Families
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T0220AB,
OT194
ISOWATT220AB
T410
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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2SC3253
Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t
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TQ-220,
2SB1267
2SD1903
T0-220MF
2SB919
2SD1235
T0-220
2SB903
2SD1212
2SB1467
2SC3253
2SD1212
2SD2218
SC74
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2SA1829
Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
Text: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.
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2SC2857
oin50
2SA1689/2SC4449
2SC5291
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
2SA1829
2SC3790
p7060
T0-126ML
2SA1371
2SC4732
e1aj
SANYO CP5
transistor 2sc3788
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2SD1213
Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .
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2SB904
2SD1213
2SB1511
2SD2285
0V/60V
2SB827
2SD-126
T0-126LP
T0-220CI
T0-220ML
e1aj
2SB828
2SB829
2SD1063
2SD1064
2SD1065
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2sc4105
Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
Text: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators
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2SC4219
2SC4220
T0-220
2SC4105
2SC4106
2SC4107
2SC4164
T0-220
2SC4160
2SC4161
2SC4427
2SC4162
2SC4163
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2sa1850
Abstract: 2SC3953 2SA1723 2SA1848 2SC3956 2SA1849 2SC482 2SC3595 SANYO SC-62 2sc456
Text: T r a n s i s t o r s f o r V e r y H i gh-Def in i t i o n C R T D i s p l a y V i d e o O u t p u t Use Our transistors for CRT display use are fabricated using our original process technology. They are designed to meet the characteristic requirements for CRT use.
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O-126,
T0-126ML
T0-220
T0220ML)
100M-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
2sa1850
2SC3953
2SA1723
2SA1848
2SC3956
2SA1849
2SC482
2SC3595
SANYO SC-62
2sc456
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2SC4641
Abstract: sma MARKING mp sanyo transistor 501 mosfet transistor marking WMM 2SA1622 2SA1782 2SA1783 MCP6 Marking sanyo 2SC4639
Text: General-Purpose Transistors Sanyo g e n e r a l - p u r p o s e t r a n s i s t o r s a r e d e s ig n e d to meet e v e ry h ig h -p erfo rm a n ce req u irem en t. They h av e w ide a p p l i c a t i o n . They a r e e a s y to use b ecau se o f la r g e c u r r e n t c a p a c ity and wide ASO.
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Tc-25T:
Ratings/Ta-25t
2SA1622
2SC421KL)
2SA178KGS)
2SC4639
2SA1782
2SC4640
T0-126LP
T0-220CI
2SC4641
sma MARKING mp
sanyo transistor
501 mosfet transistor
marking WMM
2SA1783
MCP6 Marking sanyo
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sma3001
Abstract: SGF25
Text: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''
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SPM2001A
2SC5534
SMA30QI
SPM0103A
SPM3202
20dBm
SPM3205
SPM3252
24dBm
sma3001
SGF25
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01077N
Abstract: SM01067
Text: MI Cs for BS/CS converters. L o ca l O s c i l l a t i o n M odules f o r B r o a d c a s tin g and C om m u nication v i a S a t e l l i t e Japan. A m erica, E urope Ai I t o m R F Aip MI 1 1 h Ab p VCO M odules f o r D ata Com m unications R e c e p t i o n S i d e o f D a t a Commun i c a t i o n s
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OT-189
T0-220MF
ATT218)
O-247)
MT980608TR
01077N
SM01067
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