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    S21 SOT23 Search Results

    S21 SOT23 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-6SOT23EBZ Analog Devices Evaluation board i.c. Visit Analog Devices Buy
    ADR391BUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-R2 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
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    S21 SOT23 Price and Stock

    Nexperia BAS21,215

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAS21,215 Reel 3,402,000 3,000
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    • 10000 $0.015
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    Nexperia BAS21,235

    Small Signal Switching Diodes DIODE-SML SIGNAL SOT23/TO-236A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BAS21,235 Reel 410,000 10,000
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    • 100 -
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    • 10000 $0.0122
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    S21 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 CJ2321 OT-23

    358 MARKING SOT23-3

    Abstract: k 0538 transistor marking WV2 BFQ67W
    Text: Not for new design, this product will be obsoleted soon BFQ67 / BFQ67R / BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFQ67 BFQ67R BFQ67W 2002/95/EC 2002/96/EC OT323 OT-23 358 MARKING SOT23-3 k 0538 transistor marking WV2 BFQ67W

    sot-23 transistor p2 marking

    Abstract: marking amplifier j02 marking code 604 SOT23
    Text: Not for new design, this product will be obsoleted soon BFR92A / BFR92AR / BFR92AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFR92A BFR92AR BFR92AW 2002/95/EC 2002/96/EC OT323 OT-23 sot-23 transistor p2 marking marking amplifier j02 marking code 604 SOT23

    SGA-6425

    Abstract: A64 sot23-5
    Text: Preliminary Product Description SGA-6425 Stanford Microdevices’ SGA-6425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the


    Original     		PDF SGA-6425 SGA-6425 50-ohm OT23-5 DC-2500 EDS-100971 A64 sot23-5

    sot23 A63

    Abstract: DC-3000 SGA-6325 A63 marking amplifier 100970
    Text: Preliminary Product Description SGA-6325 Stanford Microdevices’ SGA-6325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 4.9V, this RFIC uses the


    Original     		PDF SGA-6325 SGA-6325 50-ohm OT23-5 DC-3000 EDS-100970 sot23 A63 A63 marking amplifier 100970

    TRANSISTOR MARKING A53

    Abstract: marking A53 mmic SGA-5325 EDS-100967 amplifier gain 36 dB
    Text: Preliminary Product Description SGA-5325 Stanford Microdevices’ SGA-5325 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.5V, this RFIC uses the


    Original     		PDF SGA-5325 SGA-5325 50-ohm OT23-5 DC-3200 EDS-100967 TRANSISTOR MARKING A53 marking A53 mmic amplifier gain 36 dB

    SGA-5425

    Abstract: DC-2400
    Text: Preliminary Product Description SGA-5425 Stanford Microdevices’ SGA-5425 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 3.3V, this RFIC uses the


    Original     		PDF SGA-5425 SGA-5425 50-ohm OT23-5 DC-2400 EDS-100968

    transistor marking a62

    Abstract: SOT23 MARKING A62
    Text: Preliminary Product Description SGA-6225 Stanford Microdevices’ SGA-6225 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable SOT23-5 plastic package. Designed for operation at voltages as low as 4.0V, this RFIC uses the


    Original     		PDF SGA-6225 SGA-6225 50-ohm OT23-5 DC-3500 EDS-100969 transistor marking a62 SOT23 MARKING A62

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431

    NE686

    Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz


    Original     		PDF NE698M01 NE698M01 NE686) OT363 24-Hour NE686 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor

    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    BFR520

    Abstract: 900MHZ
    Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.


    Original     		PDF BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    cq 636 g transistor

    Abstract: No abstract text available
    Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF BFS17A cq 636 g transistor

    8115, transistor

    Abstract: BFR106 0482 transistor SD-1H 702 P TRANSISTOR
    Text: P hilipsSemiconducìors M 7 1 1 D fl2 b D O b ^ ltib EDÔ H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NFN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.


    OCR Scan     		PDF 711Dfl2b BFR106 MS6003 8115, transistor 0482 transistor SD-1H 702 P TRANSISTOR

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    MARKING CODE 42t

    Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBCB70 OT323. MARKING CODE 42t Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 FC 0137

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		PDF BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A