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    SAMSUNG 256KX4 STATIC RAM Search Results

    SAMSUNG 256KX4 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG 256KX4 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM64V1003C-12

    Abstract: KM64V1003C-15 KM64V1003C-20
    Text: Preliminary PRELIMINARY PREILMINARY CMOS SRAM KM64V1003C Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		KM64V1003C 256Kx4 KM64V100ut 32-SOJ-400 KM64V1003C-12 KM64V1003C-15 KM64V1003C-20 PDF

    KM641003C

    Abstract: KM641003C-12 KM641003C-15 KM641003C-20
    Text: PRELIMINARY PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		KM641003C 256Kx4 32-SOJ-400 KM641003C KM641003C-12 KM641003C-15 KM641003C-20 PDF

    KM64V1003C-12

    Abstract: KM64V1003C-15 KM64V1003C-20
    Text: KM64V1003C CMOS SRAM Document Title 256Kx4 Bit with OE High Speed CMOS Static RAM(3.3V Operating) Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet 1. Delete Preliminary 2. Relex DC characteristics


    Original     		KM64V1003C 256Kx4 32-SOJ-400 KM64V1003C-12 KM64V1003C-15 KM64V1003C-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    Original     		KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX PDF

    KM641003C

    Abstract: KM641003C-12 KM641003C-15 KM641003C-20
    Text: PRELIMINARY PRELIMINARY KM641003C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998 Preliminary


    Original     		KM641003C 256Kx4 32-SOJ-400 KM641003C KM641003C-12 KM641003C-15 KM641003C-20 PDF

    K6R1004C1B

    Abstract: K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997


    Original     		K6R1004C1B-C 256Kx4 32-SOJ-400 K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B-8 PDF

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B PDF

    K6R1004C1A

    Abstract: K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20
    Text: PRELIMINARY K6R1004C1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		K6R1004C1A-C 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400 K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R1004V1B-C Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0


    Original     		K6R1004V1B-C 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM KM64V1003B Document Title 256Kx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0


    Original     		KM64V1003B 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R1004V1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Preliminary CCPCCCRCELIMINARY Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary


    Original     		K6R1004V1C-C 256Kx4 32-SOJ-400 PDF

    KM641003B

    Abstract: KM641003B-10 KM641003B-12 KM641003B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target


    Original     		KM641003B 256Kx4 32-SOJ-400 KM641003B KM641003B-10 KM641003B-12 KM641003B-8 PDF

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B PDF

    K6E1004C1B

    Abstract: K6E1004C1B-15
    Text: PRELIMINARY K6E1004C1B-C/B-L CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		K6E1004C1B-C/B-L 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX K6E1004C1B K6E1004C1B-15 PDF

    KM641003B-12

    Abstract: KM641003B-8 KM641003B KM641003B-10
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM641003B Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997


    Original     		KM641003B 256Kx4 32-SOJ-400 KM641003B-12 KM641003B-8 KM641003B KM641003B-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRELIMINARY K6R1004C1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Preliminary CCPCCCRCELIMINARY Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5. 1998


    Original     		K6R1004C1C-C 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R1004V1A-C CMOS SRAM Document Title 256Kx4 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Revision History Rev . No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0 Release to Preliminary Data Sheet.


    Original     		K6R1004V1A-C 256Kx4 12/15/17/20ns 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: hay a » 9a KM424C256 CMOS VIDEO RAM 256KX4 Bit CMOS VIDEO RAM GENERAL DESCRIPTION FEATURES The Samsung KM424C256 is a CMOS 2 5 6 K x 4 bit Dual Port DRAM. It consists of a 256K x 4 dynamic ran­ dom access memory RAM port and 512 x 4 static serial access memory (SAM) port. The RAM and SAM ports


    OCR Scan     		KM424C256 256KX4 KM424C256 28-PIN PDF

    TL555

    Abstract: TL 555 KM44C256 KM44C258 IC 555 pin DIAGRAM samsung 256Kx4 static RAM
    Text: SAMSUNG SEMICONDUCTOR INC Tfl DEj| 7Tti4145 0 0 0 5 5 0 7 Í XT ^^ 4 " 5 'Z 7 ,-t'l /r f V U -'Z . ' ' ' ' PRELIMINARY SPECIFICATION KM44C256/KM44C258 CMOS DRAM 256KX4 Bit CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256/8 Is a CMOS high speed


    OCR Scan     		7Tti4145 KM44C256/KM44C258 256KX4 KM44C256/8-10 KM44C256/8-12 100ns 120ns 190ns 220ns KM44C256/8 TL555 TL 555 KM44C256 KM44C258 IC 555 pin DIAGRAM samsung 256Kx4 static RAM PDF

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001 PDF

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF