SAMSUNG VCP POWER SUPPLY
Abstract: No abstract text available
Text: KB8821/22/23 Data Sheet Ver. 1.0 KB8821/22/23 1.2G/2.0G/2.5G + 520MHz Dual Frequency Synthesizer DATA SHEET Version 1.0 July, 1999 CDMA TEAM SYSTEM LSI SEMICONDUCTOR SAMSUNG ELECTRONICS CO. Samsung Electronics Confidential Information KB8821/22/23 Data Sheet Ver. 1.0
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KB8821/22/23
KB8821/22/23
520MHz
520MHz.
KB8823)
KB8821ply
SAMSUNG VCP POWER SUPPLY
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alps vco
Abstract: Alps Electric vco tdh alps UCVA Alps Electric vco 64 n20 n S1M8821 S1M8821X01-R0T0 S1M8822 S1M8822X01-R0T0
Text: INTERGER RF/IF DUAL PLL S1M8821/22/23 INTRODUCTION 20-TSSOP-BD44 The S1M8821/22/23 is a high performance dual frequency synthesizer with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz. The S1M8821/22/23 contains dual-modulus prescalers. The RF
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S1M8821/22/23
20-TSSOP-BD44
S1M8821/22/23
520MHz.
S1M8823)
20-TSSOP/24-QFN
10MAX
alps vco
Alps Electric vco
tdh alps
UCVA
Alps Electric vco 64
n20 n
S1M8821
S1M8821X01-R0T0
S1M8822
S1M8822X01-R0T0
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alps vco
Abstract: alps rf
Text: INTERGER RF/IF DUAL PLL S1M8821/22/23 INTRODUCTION 20-TSSOP-BD44 The S1M8821/22/23 is a high performance dual frequency synthesizer with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz. The S1M8821/22/23 contains dual-modulus prescalers. The RF
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S1M8821/22/23
20-TSSOP-BD44
S1M8821/22/23
520MHz.
S1M8823)
20-TSSOP/24-QFN
24-Qpends
alps vco
alps rf
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20-TSSOP
Abstract: KB8821 KB8822 KB8823
Text: PRELIMINARY SPECIFICATION V1.5 FREQUENCY SYNTHESIZER KB8821/22/23 INTRODUCTION The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.
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KB8821/22/23
KB8821/22/23
520MHz.
KB8823)
KB8821/22/
20-TSly
TEL-97-D003
20-TSSOP
KB8821
KB8822
KB8823
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10GHz counters
Abstract: UCVA3
Text: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8836/37 Preliminary INTRODUCTION 24-QFN-3.5x4.5 The S1M8836/37 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.0GHz/2.5GHz and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking, low
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S1M8836/37
S1M8836/37
520MHz.
10kHz
24-QFN-3
100nF)
00MAX
08MAX
10GHz counters
UCVA3
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ALPs modulator
Abstract: 10GHz OSCILLATOR pulse generator Alps Electric vco tdh alps 10GHz counters fractional N PLL w4-20 S1M8836 S1M8836X01-G0T0 S1M8837
Text: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8836/37 INTRODUCTION 24-QFN-3.5x4.5 The S1M8836/37 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.0GHz/2.5GHz and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking, low
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S1M8836/37
24-QFN-3
S1M8836/37
520MHz.
10kHz
00MAX
ALPs modulator
10GHz OSCILLATOR pulse generator
Alps Electric vco
tdh alps
10GHz counters
fractional N PLL
w4-20
S1M8836
S1M8836X01-G0T0
S1M8837
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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RC410MD
SB450
BA41-00615A
RC410MD
Sheet18.
Sheet19.
Sheet20
TP682
TP685
TP686
54B2
HH-1M1608-600JT
20B3 diode
tp807
TP889
hh-1m1608
RC410M
IR 30D1 7E
TP828
t9504
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GDDR2
Abstract: gDDR2-800
Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.3 Jun. 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QC-ZC
512Mbit
GDDR2
gDDR2-800
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MCD2926
Abstract: MCD8825B GP214D TB31202 TB31202 "pin compatible" S1T8825 mcd8825 566 VCO CP12 CP21
Text: MC Devices General Description Features The MCD8825B is a high performance dual frequency synthesizer with RF operation frequency from 200MHz to 1.3GHz. The MCD8825B contains two dual modulus prescalers, three programmable counters, one crystal oscillator, two phase detectors, two
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MCD8825B
200MHz
1300MHz
MCD2926
GP214D
TB31202
TB31202 "pin compatible"
S1T8825
mcd8825
566 VCO
CP12
CP21
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K4N1G164QF
Abstract: K4N1G164QF-BC20
Text: Rev. 1.1, Sep. 2010 K4N1G164QF 1Gb F-die gDDR2 SDRAM 84 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4N1G164QF
6-10per)
11-50per)
K4N1G164QF
K4N1G164QF-BC20
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K4N1G164QE
Abstract: k4n1g164qe-hc20
Text: Rev. 1.33, Apr.2010 K4N1G164QE 1Gb E-die gDDR2 SDRAM 84 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4N1G164QE
6-10per)
11-50per)
K4N1G164QE
k4n1g164qe-hc20
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ALPs modulator
Abstract: CH250 Alps Electric vco 64 fractional N PLL spur free fractional PLL Alps Electric vco 4X alps vco S1M8831A S1M8831A01-G0T0 S1M8833
Text: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL S1M8831A/33 INTRODUCTION 24-QFN-3.5x4.5 The S1M8831A/33 is a Fractional-N frequency synthesizer with integrated prescalers, designed for RF operation up to 1.2GHz/K-PCS and for IF operation up to 520MHz. The fractional-N synthesizer allows fast-locking,
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S1M8831A/33
24-QFN-3
S1M8831A/33
520MHz.
10kHz
00MAX
ALPs modulator
CH250
Alps Electric vco 64
fractional N PLL
spur free fractional PLL
Alps Electric vco 4X
alps vco
S1M8831A
S1M8831A01-G0T0
S1M8833
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DDR2-400
Abstract: DDR2-533 JESD51-2 K4T1G044QM-ZCCC K4T1G044QM-ZCD5 1G DDR2 128 x 8
Text: DDR2 SDRAM 1G M-die DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.4 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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DDR2-400
DDR2-533
DDR2-400
JESD51-2
K4T1G044QM-ZCCC
K4T1G044QM-ZCD5
1G DDR2 128 x 8
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gDDR2-800
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QF-GC
256Mbit
gDDR2-800
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Untitled
Abstract: No abstract text available
Text: DDR2 SDRAM 1G M-die DDR2 SDRAM 1Gb M-die DDR2 SDRAM Specification Version 1.4 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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DDR2-400
DDR2-533
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K4T1G084QA-ZCE6
Abstract: K4T1G164QA-ZCE6 K4T1G084QA-ZCCC DDR2 Mechanical Dimensions K4T1G044QA-ZCCC K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE K4T1G164QA-ZCD5 sdram ddr2
Text: 1G A-die DDR2 SDRAM DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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84FBGA
Abstract: No abstract text available
Text: DDR2 SDRAM K4T51163QE 512Mb E-die DDR2 SDRAM Specification Industrial Temp. 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T51163QE
512Mb
84FBGA
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K4T51163QE
Abstract: K4T51163QE-ZIE6 DDR2-400 DDR2-533 DDR2-667 K4T51163QE-ZDE6
Text: DDR2 SDRAM K4T51163QE 512Mb E-die DDR2 SDRAM Specification Industrial Temp. 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4T51163QE
512Mb
84FBGA
K4T51163QE
K4T51163QE-ZIE6
DDR2-400
DDR2-533
DDR2-667
K4T51163QE-ZDE6
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Untitled
Abstract: No abstract text available
Text: DDR2 SDRAM 256Mb F-die DDR2 SDRAM 256Mb F-die DDR2 SDRAM Specification Version 1.8 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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256Mb
DDR2-667
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k4t2g084
Abstract: K4T2G084QM-ZCE6 DDR2-400 DDR2-533 DDR2-667
Text: Preliminary K4T2G044QM K4T2G084QM 2Gb DDR2 SDRAM 2Gb M-die DDR2 SDRAM Specification Version 0.1 March 2006 68FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4T2G044QM
K4T2G084QM
68FBGA
k4t2g084
K4T2G084QM-ZCE6
DDR2-400
DDR2-533
DDR2-667
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K4T51163QE
Abstract: No abstract text available
Text: K4T51043QE K4T51083QE K4T51163QE DDR2 SDRAM 512Mb E-die DDR2 SDRAM Specification Version 1.0 May 2006 60FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K4T51043QE
K4T51083QE
K4T51163QE
512Mb
60FBGA
84FBGA
K4T51163QE
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Untitled
Abstract: No abstract text available
Text: DDR2 SDRAM 1G A-die DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.0 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Hctls05
Abstract: No abstract text available
Text: S A M S U N G S E M I C O N D U C T O R INC OS KS54HCTLS f ì C KS74HCTLS w De J 7 ^ 4 1 4 2 Q00b5fl4 4 Hex Inverters with Open-Drain Outputs — -:-• — t FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with
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OCR Scan
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Q00b5fl4
KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
Hctls05
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KM41C1000B-8
Abstract: KM41C1000B
Text: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed
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OCR Scan
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0G10022
KM41C1000B
KM41C1000B-6
110ns
KM41C1000B-7
130ns
KM41C1000B-8
KM41C1000B-10
KM41C1000B
576x1
KM41C1000B-8
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