Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SC-89 JEDEC Search Results

    SC-89 JEDEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy

    SC-89 JEDEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSSOP 8PIN MARK 21

    Abstract: land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P
    Text: CMOS IC PACKAGES Package Type DIP/TO Gull-wing Flat-lead WLP *1 Pin Count 3 8 4 5 3 5 6 3 5 8 14 8 10 8 16 24 8 5 6 8 8 10 6 4 6 8 4 5 6 8 Package Name TO-92 8-Pin DIP SC-82AB SC-88A SOT-23-3 SOT-23-5 SOT-23-6 SOT-89-3 SOT-89-5 8-Pin SOP JEDEC 14-Pin SOP


    Original     		PDF SC-82AB SC-88A OT-23-3 OT-23-5 OT-23-6 OT-89-3 OT-89-5 14-Pin 10-Pin 16-Pin TSSOP 8PIN MARK 21 land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P

    ULTVST5VESGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD ULTVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 125 WATTS PEAK PULSE POWER FEATURES *125W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-523/SC-89-3 * High temperature soldering guaranteed :


    Original     		PDF 8X20uSec SC-75/SOT-523/SC-89-3 260C/10 SC-75 ULTVST5VESGP

    2SC5547

    Abstract: mark 641 sot dc AD 4272
    Text: 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING 2SC5547 is SC-62 SOT-89 package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. UNIT:mm


    Original     		PDF 2SC5547 2SC5547 SC-62 OT-89) OT-89 SC-62 mark 641 sot dc AD 4272

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


    Original     		PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89


    Original     		PDF 2SD2661 180mV SC-62 OT-89

    Untitled

    Abstract: No abstract text available
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89


    Original     		PDF 2SD2661 180mV SC-62 OT-89 2SD2661

    2SD2661

    Abstract: T100
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89


    Original     		PDF 2SD2661 180mV SC-62 OT-89 2SD2661 T100

    Untitled

    Abstract: No abstract text available
    Text: MCP111/112 Micropower Voltage Detector Features Package Types 3-Pin SOT-89 3-Pin SOT23-3/SC-70 VOUT 1 VSS 2 VDD MCP111/112 • Ultra-low supply current: 1.75 µA max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V


    Original     		PDF MCP111/112 OT-89 OT23-3/SC-70 MCP111 MCP112 OT23-3, SC-70 OT-89-3 MCP1XX-195)

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


    Original     		PDF Si1039X SC-89 2002/95/EC Si1039X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area


    Original     		PDF WGSMF05C SC-89 IEC61000-4-2 IEC61000-4-4 5/50ns OT-563 OT-563 10sec.

    Untitled

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


    Original     		PDF Si1037X SC-89 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


    Original     		PDF Si1039X SC-89 2002/95/EC Si1039X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    L425

    Abstract: lanskroun
    Text: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability


    Original     		PDF S-TCCPR0M605-N L425 lanskroun

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)


    Original     		PDF LRB521S-30T1 SC-79/SOD523) 200mA 200mA) OD523/SC-79 LRB521S-30T1

    CY7C1335

    Abstract: CY7C1336 DO30 3Tg 21
    Text: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout


    OCR Scan     		PDF CY7C1335 CY7C1336 75-MHz 66-MHz 60-MHz CY7C1335) CY7C1336) CY7C1336 DO30 3Tg 21

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


    OCR Scan     		PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    2sc180

    Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2sc180 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78

    MT1711

    Abstract: 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 450MS 370fS MD2369BF* 500MSA ME5001 500M5 SE5010 500MS TI407 MT1711 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918

    3T202

    Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 250nb 2SD63 2SD64 2SD65 2SC89Ã 2SC179t 3T202 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155

    2N35 Ge NPN

    Abstract: 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N35 Ge NPN 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454