MARKING ta y sod-323
Abstract: 1N914BWS 1N4148WS
Text: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted
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Original
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200mW
OD-323
1N4148WS
1N4448WS
1N914BWS
1N4448WS,
TC1N4448WS,
MARKING ta y sod-323
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PDF
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ERB83-004
Abstract: diode ft 344
Text: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name
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ERB83-004
diode ft 344
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PDF
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smd code marking 3A sot23
Abstract: marking SH SOT23 d96 smd SMD MARKING CODE sh SMD D62 SMD MARKING ps 6263S D96 SOT23 MO marking code sot23 da5. smd
Text: SMD LOWCurrent Schottky Diodes SOT-23 Case NEW! TYPE NO. CONFIGURATION v nnM VOLTS MAX (mA) MAX CM PD 6263 CM PD 6263A C M PD 6263C C M PD 6263S SIN GLE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL, IN SE R IE S 70 70 70 70 15 15 15 15 v ,<
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OT-23
6263C
6263S
1N6263
1N62C3
1N6263
smd code marking 3A sot23
marking SH SOT23
d96 smd
SMD MARKING CODE sh
SMD D62
SMD MARKING ps
D96 SOT23
MO marking code sot23
da5. smd
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marking SH SOT23
Abstract: smd code marking pd SMD MARKING CODE sh smd code marking LE sot23 MARKING MON sot-23 d96 smd sot 23 marking code CD MO marking code sot23 da5. smd marking pd
Text: SMD Low Current Sdiottky Diodes SOT-23 Case NEW! T Y P E MO. CONFIGURATION V rrm VOLTS MAX >f (mA) MAX C M PD 6263 C M PD 6263A CM PD 6 26 3C CM PD 626 3S SIN G LE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL. IN S E R IE S 70 70 70 70 15 15
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OT-23
1N6263
1N6263
marking SH SOT23
smd code marking pd
SMD MARKING CODE sh
smd code marking LE sot23
MARKING MON sot-23
d96 smd
sot 23 marking code CD
MO marking code sot23
da5. smd
marking pd
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PDF
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ic 4016
Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August
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0005S3M
MIL-S-19500/195D
1N3206
MIL-S-19500/195D,
QQ0012S
MIL-S-19500.
MIL-S-19500
1N4373
ic 4016
1N3206
DIODE PK IN 4001
MIL-STD-750 METHOD 2036
MIL-STD-750 METHOD 2036 CONDITION E
MIL-S-19491
D253S
IC 4011 details
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PDF
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1SS154
Abstract: No abstract text available
Text: TO SHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 U H F-S BAND M IX E R / DETECTOR APPLICATIONS U nit in mm +0.5 2.5 - 0.3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC RATING 6 UNIT V Reverse Voltage
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1SS154
SC-59
10juA
1SS154
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS154 TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 • w êêf w êêf m 5 4 wm r m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS Ta =25°C SYMBOL Reverse Current Forward Voltage Ir Forward Voltage
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1SS154
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PDF
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1SV237
Abstract: No abstract text available
Text: TOSHIBA_ 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 237 Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance
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1SV237
1SV237
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PDF
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1SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV277
470MHz
1SV277
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PDF
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1SV305
Abstract: No abstract text available
Text: 1SV305 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 305 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV305
0014g
470MHz
1SV305
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PDF
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1SV308
Abstract: HP4291A
Text: 1SV308 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV308
0014g
HP4291A
1SV308
HP4291A
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MARKING L toshiba USC
Abstract: 1SV304
Text: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV304
470MHz
MARKING L toshiba USC
1SV304
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PDF
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diode bridge toshiba
Abstract: 1SV252 aml 10 series
Text: 1SV252 TO SH IBA 1 SV2 5 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VH F-U HF BAND RF ATTENUATOR APPLICATIONS MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If
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1SV252
SC-70
100ju
300ju
diode bridge toshiba
1SV252
aml 10 series
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fr2t diode
Abstract: VRRM1000 toshiba diode do-41
Text: TO SH IBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0-5A V r r m = 1000, 1500V
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DO-41
000707EAA2'
fr2t diode
VRRM1000
toshiba diode do-41
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PDF
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1SV276
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV276
470MHz
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PDF
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1SV280
Abstract: No abstract text available
Text: TO SH IBA 1SV280 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV280 High Capacitance Ratio : C2v /C;lov = 2.4 TYP. Low Series Resistance : rs = 0.440 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV280
0014g
C2V/C10V
1SV280
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PDF
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1SS364
Abstract: marking LL
Text: 1SS364 TO SH IBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SS364
100MHz
1SS364
marking LL
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PDF
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1SV285
Abstract: No abstract text available
Text: TO SHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4Y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.
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1SV285
0014g
1SV285
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PDF
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1SV28
Abstract: No abstract text available
Text: TOSHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.
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1SV285
0014g
1SV28
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PDF
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1SV279
Abstract: No abstract text available
Text: 1SV279 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 279 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV279
0014g
1SV279
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PDF
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1SV284
Abstract: No abstract text available
Text: TOSHIBA 1SV284 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 4 Unit in mm VCO FOR V /U H F BAND RADIO • High Capacitance Ratio : C iy /C 4Y = 2.0 TYP. • Low Series Resistance : rs = 0.220 (TYP.) • Useful for Small Size Tuner.
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1SV284
0014g
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PDF
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1SV239
Abstract: C10V
Text: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO • • Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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1SV239
1SV239
C10V
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PDF
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1SS369
Abstract: No abstract text available
Text: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING U nit in mm • Small Package • Low Forward Voltage : V f 3 —0.54V (TYP.) • Low Reverse Current : Ir = 5/¿A (MAX.) 0.8 ±0.1 1.3 ± 0.1
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1SS369
961001EAA2'
1SS369
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PDF
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1SV245
Abstract: C25V
Text: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.
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1SV245
C2V/C25V
470MHz
1SV245
C25V
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