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Vishay Siliconix SI9435BDY-T1-E3 MOSFET P-CH 30V 4.1A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9435BDY-T1-E3	Digi-Reel	6,308		1	1 $1.4 10 $0.885 100 $1.4 1000 $0.41764 10000 $0.41764	Buy Now
	SI9435BDY-T1-E3	Cut Tape	6,308		1	1 $1.4 10 $0.885 100 $1.4 1000 $0.41764 10000 $0.41764	Buy Now
	SI9435BDY-T1-E3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.37302	Buy Now
RS	SI9435BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.84	Get Quote
Bristol Electronics	SI9435BDY-T1-E3		2,130			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI9435BDY-T1-E3		100			1 $0.69 10 $0.575 100 $0.46 1000 $0.46 10000 $0.46	Buy Now
New Advantage Corporation	SI9435BDY-T1-E3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.3067	Buy Now
Vishay Siliconix SI9435BDY-T1-GE3 MOSFET P-CH 30V 4.1A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9435BDY-T1-GE3	Cut Tape	2,371		1	1 $1.45 10 $0.917 100 $1.45 1000 $0.43444 10000 $0.43444	Buy Now
	SI9435BDY-T1-GE3	Digi-Reel	2,371		1	1 $1.45 10 $0.917 100 $1.45 1000 $0.43444 10000 $0.43444	Buy Now
	SI9435BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.38838	Buy Now
Quest Components	SI9435BDY-T1-GE3		49			1 $1.05 10 $0.84 100 $0.525 1000 $0.525 10000 $0.525	Buy Now
onsemi SI9435DY MOSFET P-CH 30V 5.3A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9435DY	Cut Tape			1	1 $1.11 10 $1.11 100 $1.11 1000 $1.11 10000 $1.11	Buy Now
	SI9435DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.28274	Buy Now
Win Source Electronics	SI9435DY		2,600			1 - 10 - 100 - 1000 $0.2739 10000 $0.2456	Buy Now
Vishay Intertechnologies SI9435BDY-T1-E3 Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9435BDY-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9435BDY-T1-E3	Reel	12,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.31995	Buy Now
	SI9435BDY-T1-E3	Ammo Pack		11 Weeks, 1 Days	1	1 $0.917 10 $0.762 100 $0.599 1000 $0.599 10000 $0.599	Buy Now
Newark	SI9435BDY-T1-E3	Cut Tape	1,744		1	1 $0.917 10 $0.917 100 $0.917 1000 $0.917 10000 $0.917	Buy Now
	SI9435BDY-T1-E3	Reel			1	1 $0.89 10 $0.766 100 $0.766 1000 $0.766 10000 $0.766	Buy Now
Bristol Electronics	SI9435BDY-T1-E3		5,372			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI9435BDY-T1-E3		2,841			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI9435BDY-T1-E3		2,509			1 $1.15 10 $1.15 100 $1.15 1000 $0.46 10000 $0.4025	Buy Now
	SI9435BDY-T1-E3		1,788			1 $1.15 10 $1.15 100 $1.15 1000 $0.46 10000 $0.4025	Buy Now
	SI9435BDY-T1-E3		1,384			1 $1 10 $1 100 $1 1000 $0.26 10000 $0.26	Buy Now
	SI9435BDY-T1-E3		1,052			1 $2.36 10 $2.36 100 $2.36 1000 $0.9735 10000 $0.885	Buy Now
	SI9435BDY-T1-E3		542			1 $1.15 10 $1.15 100 $0.575 1000 $0.46 10000 $0.46	Buy Now
	SI9435BDY-T1-E3		80			1 $0.2 10 $0.2 100 $0.09 1000 $0.09 10000 $0.09	Buy Now
TTI	SI9435BDY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.311	Buy Now
	SI9435BDY-T1-E3	Cut Tape	2,470		10	1 - 10 $0.583 100 $0.583 1000 $0.583 10000 $0.583	Buy Now

TME	SI9435BDY-T1-E3		1,728		3	1 - 10 $0.413 100 $0.373 1000 $0.339 10000 $0.314	Buy Now
Avnet Asia	SI9435BDY-T1-E3				2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	SI9435BDY-T1-E3	Cut Tape	14			1 $0.688 10 $0.526 100 $0.526 1000 $0.526 10000 $0.526	Buy Now
EBV Elektronik	SI9435BDY-T1-E3			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI9435BDY-T1-GE3 P Channel Mosfet; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.3W Rohs Compliant: Yes \|Vishay SI9435BDY-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI9435BDY-T1-GE3	Cut Tape	3,679		1	1 $0.3 10 $0.3 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
	SI9435BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	SI9435BDY-T1-GE3		12			1 $1 10 $0.8 100 $0.8 1000 $0.8 10000 $0.8	Buy Now

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SI9435 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
SI9435	Fairchild Semiconductor	P-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI9435BDY	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
Si9435BDY SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI9435BDY-T1	Vishay Siliconix	P-Channel 30-V (D-S) MOSFET	Original	PDF
SI9435BDYT1E3	Vishay	XSTR, SM, PFET, IRF7205, SO-8,	Original	PDF
SI9435BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.1A 8-SOIC	Original	PDF
SI9435BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.1A 8-SOIC	Original	PDF
SI9435DY	Fairchild Semiconductor	P-Channel Logic Level PowerTrench MOSFET	Original	PDF
Si9435DY	Fairchild Semiconductor	P-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI9435DY	Kexin	P-Channel Enhancement Mode MOSFET	Original	PDF
Si9435DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI9435DY	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style SO-8	Scan	PDF
SI9435DY-T1	Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET	Original	PDF

SI9435 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8 pin ic 9435 Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain	Original	Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435	PDF
SI9435BDY-E3 Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1 Text: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1	Original	Si9435BDY Si9435DY Si9435BDY-E3 Si9435BDY-T1 Si9435DY-T1 Si9435BDY-T1-E3	PDF
Si64 Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94 Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94	PDF
Si9435DY Abstract: No abstract text available Text: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET	Original	Si9435DY S-00652--Rev. 27-Mar-00	PDF
si9435bdy vishay Abstract: No abstract text available Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9435BDY 2002/95/EC Si9435BDY-T1-E3 Si9435BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si9435bdy vishay	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Untitled Abstract: No abstract text available Text: MOSFET IC SMD Type P-Channel Enhancement Mode MOSFET SI9435DY • Features ● 5.3 A, -30 V. RDS ON = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)	Original	SI9435DY	PDF
inductor 100uH Abstract: capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 Si9435DY 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104 Text: Server +12V INPUT 1 C1 0.47uF 2 R2 10k C2 27nF VL EXT MAX1846 3 C3 220pF 4 CS 8 COMP PGND REF FB GND 5 P1 Si9435DY 55mOhm 9 FREQ R1 150k 300kHz C4 0.1uF 1846-12b RWY 08/10/01 10 V+ C5 10uF 25V CER 7 6 L1 100uH DS5022P -104 D1 EP05 Q03L R3 0.1 0.25W R4 97.6k	Original	MAX1846 220pF Si9435DY 55mOhm 300kHz) 1846-12b 100uH DS5022P 250mA inductor 100uH capacitor 104 ceramic 10uf 25V capacitor CAPACITOR 0805 RESISTOR 1210 ceramic capacitor 104 104 ceramic capacitor EP05Q03L Ceramic Capacitors 104	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Si9435BDY-T1-GE3 Abstract: Si9435BDY Si9435BDY-T1-E3 si9435bdy vishay Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9435BDY 2002/95/EC Si9435BDY-T1-E3 Si9435BDY-T1-GE3 18-Jul-08 si9435bdy vishay	PDF
si9435bdy vishay Abstract: 72245 Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D	Original	Si9435BDY Si9435BDY-T1 Si9435BDY--E3 Si9435BDY-T1--E3 S-50153--Rev. 31-Jan-05 si9435bdy vishay 72245	PDF
SI9435BDY-E3 Abstract: Si9435BDY Si9435BDY-T1 Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D	Original	Si9435BDY Si9435BDY-T1 Si9435BDY--E3 Si9435BDY-T1--E3 08-Apr-05 SI9435BDY-E3	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361 Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361	PDF
si9435bdy vishay Abstract: No abstract text available Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S 3 6 D	Original	Si9435BDY Si9435BDY-T1 Si9435BDY--E3 Si9435BDY-T1--E3 18-Jul-08 si9435bdy vishay	PDF

Si9435BDY Abstract: Si9435BDY-T1 Text: Si9435BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = −10 V −5.7 0.055 @ VGS = −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 −30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2	Original	Si9435BDY Si9435BDY-T1 S-32274--Rev. 03-Nov-03	PDF
Si9435BDY Abstract: si9435bdy vishay 7233-5 Text: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9435BDY 0-to-10V 15-Jun-03 si9435bdy vishay 7233-5	PDF
C 6090 Abstract: 2437 power mosfet 7400 spice model c 2437 power mosfet data AN609 Si9435BDY Text: Si9435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si9435BDY AN609 10-Aug-07 C 6090 2437 power mosfet 7400 spice model c 2437 power mosfet data	PDF
Untitled Abstract: No abstract text available Text: Si9435BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.042 @ VGS = - 10 V - 5.7 0.055 @ VGS = - 6 V - 5.0 0.070 @ VGS = - 4.5 V - 4.4 - 30 D TrenchFETr Power MOSFET S SO-8 S 1 8 D S 2 7 D S	Original	Si9435BDY Si9435BDY-T1 S-31252--Rev. 16-Jun-03	PDF
Untitled Abstract: No abstract text available Text: Si9435DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 –30 30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET	Original	Si9435DY 08-Apr-05	PDF
Si9435BDY Abstract: Si9435BDY-T1-E3 Si9435BDY-T1-GE3 Text: Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si9435BDY 2002/95/EC Si9435BDY-T1-E3 Si9435BDY-T1-GE3 11-Mar-11	PDF
C149 Abstract: R-163 TP0610T 100uf-16v c148 R164 R158 R159 MIC7221 Si9435DY Text: Automatic Battery Switch-Over Circuit U40 Si9435DY 12VDC D12 F6 D 5-8 S 1-3 AC Adaptor VSOURCE 2.0A • • • SS24 G 4 7uA Supply Current 15V Max Supply Voltage Rail-to-Rail Input/Output + C133 100uF 16V R159 10k C148 0.1uF R157 1k R122 10k D21 RB400D R158	Original	Si9435DY 12VDC 100uF RB400D Si4435DY MIC7221 TP0610T 2N7002 C149 R-163 TP0610T 100uf-16v c148 R164 R158 R159 MIC7221	PDF
9435 fairchild Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8 Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain	Original	Si9435DY 9435 fairchild 9435 mosfet mosfet 9435 9435 so8	PDF
Si9435BDY Abstract: si9435bdy vishay Text: SPICE Device Model Si9435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si9435BDY 18-Jul-08 si9435bdy vishay	PDF
T0252AA Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y	OCR Scan	SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB	PDF

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SI9435 Price and Stock

Vishay Siliconix SI9435BDY-T1-E3

Vishay Siliconix SI9435BDY-T1-GE3

onsemi SI9435DY

Vishay Intertechnologies SI9435BDY-T1-E3

Vishay Intertechnologies SI9435BDY-T1-GE3

SI9435 Datasheets (13)

SI9435 Datasheets Context Search

8 pin ic 9435

SI9435BDY-E3

Si64

Si9435DY

si9435bdy vishay

Si4435DY

Untitled

inductor 100uH

Si4435DY

Si9435BDY-T1-GE3

si9435bdy vishay

SI9435BDY-E3

Si4435DY

si9435bdy vishay

Si9435BDY

Si9435BDY

C 6090

Untitled

Untitled

Si9435BDY

C149

9435 fairchild

Si9435BDY

T0252AA