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    SI9942 Price and Stock

    Vishay Siliconix SI9942DY-T1

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    Bristol Electronics SI9942DY-T1 767
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    SI9942DY-T1 280 4
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    Quest Components SI9942DY-T1 9,989
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    SI9942DY-T1 613
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    SI9942DY-T1 224
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    SIL SI9942-DY

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    Bristol Electronics SI9942-DY 480
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    Vishay Siliconix SI9942DY

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    Bristol Electronics SI9942DY 228
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    Quest Components SI9942DY 197
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    SI9942DY 192
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    SI9942DY 155
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    SI9942DY 44
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    Component Electronics, Inc SI9942DY 9
    • 1 $1.15
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    • 100 $0.87
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    Vishay Intertechnologies SI9942DY

    MOSFET Transistor, Pair, Complementary, SO
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    Quest Components SI9942DY 88
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    • 100 $1.144
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    Vishay Intertechnologies SI9942DY-T1

    3000mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI9942DY-T1 88
    • 1 $2.04
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    • 100 $1.122
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    Find more SI9942 price and stock on Findchips.com

    SI9942 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9942DY Unknown Metal oxide N/P-channel field effect transistor enh. Original PDF
    Si9942DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si9942DY Vishay Intertechnology Dual Enhancement-Mode MOSFET (N- and P- Channel) Original PDF
    SI9942DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET Original PDF
    SI9942DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N & P- Channel, 20/-20V, Pair, Pkg Style SO-8 Scan PDF
    Si9942DY SPICE Device Model Vishay Dual Enhancement-Mode MOSFET (N- and P-Channel) Original PDF
    SI9942DY-T1 Vishay Intertechnology Dual Enhancement-Mode MOSFET (N- and P- Channel) Original PDF

    SI9942 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    h1010

    Abstract: 1/SI9939 Si9942DY si9939
    Text: Si9942DY Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 20 PĆChannel -20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = -10 V "2.5 0.350 @ VGS = -4.5 V "2.0 Recommended upgrade: Si9939


    Original     		PDF Si9942DY Si9939 Si6942DQ P-38798--Rev. h1010 1/SI9939 si9939

    Si9942DY

    Abstract: No abstract text available
    Text: Si9942DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 D1 D1 S2 SO-8 S1 1 8 D1


    Original     		PDF Si9942DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si9942DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 D1 D1 S2 SO-8 S1 1 8 D1


    Original     		PDF Si9942DY 08-Apr-05

    Si9942DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9942DY Dual Enhancement-Mode MOSFET N- and P- Channel Characteristics • N- and P- channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF Si9942DY

    Si4532DY

    Abstract: Si4539DY Si9942DY si6452
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4532DY or Si4539DY


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-51408--Rev. 20-Jan-97 si6452

    Si9942DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9942DY Vishay Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9942DY 18-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: SI9942DY Transistors Complementary Pair of MOSFETs V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.5 @Temp (øC)70’ IDM Max (@25øC Amb)10 Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ


    Original     		PDF SI9942DY

    Si4532DY

    Abstract: Si4539DY Si9942DY
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4532DY or Si4539DY


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-47958--Rev. 15-Apr-96

    Si9942DY

    Abstract: No abstract text available
    Text: Si9942DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 D1 D1 S2 SO-8 S1 1 8 D1


    Original     		PDF Si9942DY Curr25 S-000652--Rev. 27-Mar-00

    ds lite

    Abstract: si9942dy Si4532DY Si4539DY
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0 Recommended upgrade: Si4532DY or Si4539DY


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-47958--Rev. 15-Apr-96 ds lite

    Untitled

    Abstract: No abstract text available
    Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0


    Original     		PDF Si9942DY Si4532DY Si4539DY Si6452DQ S-51408--Rev. 20-Jan-97

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    BV725

    Abstract: BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11
    Text: Values Units 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V Preliminary Data VDD5V + 0,3 GND - 0,3 13,5 V V V 50 – 25 . + 85 kHz °C Values Units 15 + 5 % 5+5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C Symbol Term


    Original     		PDF VDD15V VDD15V) \MARKETIN\FRAMEDAT\datbl\Treiber\Skic2001 BV725 BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11

    593D

    Abstract: 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO
    Text: Final Electrical Specifications LTC1773 Synchronous Step-Down Regulator Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power


    Original     		PDF LTC1773 550kHz LTC1771 LTC1772 OT-23 OT-23, 550kHz, LTC1877 600mA 593D 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO

    AN801

    Abstract: CD4000 Si9100 Si9942DY SMW14N50F
    Text: AN801 Siliconix Designing with LITTLE FOOTR Power MOSFETs in SurfaceĆMount SOĆ8 Packages Jim Harnden Siliconix' LITTLE FOOT power MOSFETs pack potent power handling into tiny surfaceĆmount packages. The standardĆoutline, 8Ćpin SOIC package (Figure 1) has a copper leadframe that maximizes


    Original     		PDF AN801 Si9942DY AN801 CD4000 Si9100 SMW14N50F

    LTC3026

    Abstract: 0603PS-103KB LQH2MCN100K02 LTC3026EDD LTC3026EMSE
    Text: LTC3026 1.5A Low Input Voltage VLDO Linear Regulator U FEATURES DESCRIPTIO • The LTC 3026 is a very low dropout VLDOTM linear regulator that can operate at input voltages down to 1.14V. The device is capable of supplying 1.5A of output current with a typical dropout voltage of only 100mV. To allow


    Original     		PDF LTC3026 100mV. LTC3026 100mV Shutdown340mV O-220, OT-223 LT1964 200mA, 340mV 0603PS-103KB LQH2MCN100K02 LTC3026EDD LTC3026EMSE

    Si4532DY

    Abstract: Si4539DY Si9928DY Si9939DY Si9942DY Si9958DY P-channel
    Text: Transistors Siliconix Complementary LITTLE FOOTR Devices 8-Pin SOIC Maximum Ratings rDS(on) (W) Part Number VDS (V) VGS = "10 V Si9928DY VGS = "2.7 V ID (A) Configuration 0.05 0 11 0.11 0.08 0 19 0.19 "5 "3.4 34 N-Channel P Ch P-Channel l 0.125 0.2 0.25


    Original     		PDF Si9928DY Si9958DY Si4539DY Si9942DY Si9939DY Si4532DY P-channel

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    LTC3026

    Abstract: No abstract text available
    Text: LTC3026 1.5A Low Input Voltage VLDO Linear Regulator Features Description Input Voltage Range: 1.14V to 3.5V with Boost Enabled 1.14V to 5.5V (with External 5V Boost) n Low Dropout Voltage: 100mV at I OUT = 1.5A n Adjustable Output Range: 0.4V to 2.6V n Output Current: Up to 1.5A


    Original     		PDF LTC3026 100mV 10-Lead 10-Lead 290mV O-220, 300mV OT-223, 035mV

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    LTC3026

    Abstract: No abstract text available
    Text: LTC3026 1.5A Low Input Voltage VLDO Linear Regulator FEATURES n n n n n n n n n n n n DESCRIPTION Input Voltage Range: 1.14V to 3.5V with Boost Enabled 1.14V to 5.5V (with External 5V Boost) Low Dropout Voltage: 100mV at IOUT = 1.5A Adjustable Output Range: 0.4V to 2.6V


    Original     		PDF LTC3026 100mV 10-Lead 10-Lead LT3080/LT3080-1 300mV O-220, OT-223, LT3150 035mV LTC3026

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    SMW14N50F

    Abstract: an904 AN90 siliconix
    Text: fT S ilicon ix AN90-4 A M e m b e r o f th e T e m ic G ro u p Designing with Complementary Power MOSFETs in Surface-Mount SO-8 Packages Jim Hamden T he Si9942DY, with low-voltage, low on-resistance com plem entaiy p-channel and n-channel M OSFETs, packs potent power handling into a tiny surface-m ount


    OCR Scan     		PDF AN90-4 Si9942DY 9942DY SMW14N50F an904 AN90 siliconix