HEIDENHAIN
Abstract: heidenhain 12 pin connector Siemens encoder cable heidenhain encoder heidenhain connector indramat pinbelegung encoder heidenhain 9 pin connector heidenhain 15 pin connector HEIDENHAIN encoder 4
Text: Cavo adattatore per PSR-RSM CABLE-./8/250/RSM/. FRANÇAIS Câble adaptateur pour PSR-RSM CABLE-./8/250/RSM/. ENGLISH Cable adapter for PSR-RSM CABLE-./8/250/RSM/. DEUTSCH Kabeladapter für PSR-RSM CABLE-./8/250/RSM/. www.phoenixcontact.com
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/8/250/RSM/.
25/8-pos.
CABLE-25/8/250/RSM/SIMO611D
CABLE-25/8/250/RSM/ARADEX
CABLE-25/8/250/RSM/.
HEIDENHAIN
heidenhain 12 pin connector
Siemens encoder cable
heidenhain encoder
heidenhain connector
indramat
pinbelegung encoder
heidenhain 9 pin connector
heidenhain 15 pin connector
HEIDENHAIN encoder 4
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Q63100
Abstract: PTC 1450 PTC Thermistors S M Siemens Matsua ptc t170 siemens 230 92 B59170 PTC t250 B59100 T100 PTC Thermistors S M Siemens Matsushita t250 ptc
Text: Selector Guide PTC thermistors for overload protection Vmax V IN mA IS mA TRef °C RN Ω B59165 C 1165 20 800 1300 150 1 B599*5 (C 9*5) 20 150 … 2900 300 … 5700 160 0,2 … 13 43 B599*5 (C 9*5) 30 120 … 2500 240 … 5000 120 0,2 … 13 46 B599*0 (C 9*0)
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B59165
B59801
B59901
B59701
B59060
B59053
B59066
B59042
B59102
Q63100
PTC 1450
PTC Thermistors S M Siemens Matsua
ptc t170
siemens 230 92
B59170
PTC t250
B59100 T100
PTC Thermistors S M Siemens Matsushita
t250 ptc
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UPS SIEMENS
Abstract: SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5
Text: C o o l M O S TM C 2 COOL & FAST C o o l M O S TM C 2 the second generation www.infineon.com Never stop thinking. C o o l M O S TM C 2 the second generation Infineon’s introduction of the 600V CoolMOSTM C2 technology is a breakthrough design for power conversion systems such as
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B152-H7641-X-X-7600
UPS SIEMENS
SPW17N80C2
500 coolmos
SPD01N60S5
SPN01N60S5
A1040 to-252
SPN04N60C2
Infineon CoolMOS
SPU01N60S5
SPD02N60S5
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Siemens PT100 temperature sensor
Abstract: siemens a5e00 Siemens PT100 temperature sensor RTD Siemens PT100 temperature sensor din iec 60751 siemens ad2 c11 Siemens Ni1000 temperature sensor siemens thermocouple Siemens PT100 w Siemens K11 KEMA 01 ATEX 1264
Text: 2 Siemens AG 2015 Temperature Measurement 2/2 2/7 2/11 2/18 2/25 2/31 2/38 2/45 Product overview Transmitters for mounting in sensor head SITRANS TH100 two-wire system Pt100 SITRANS TH200 two-wire system universal SITRANS TH300 two-wire system universal, HART
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TH100
Pt100)
TH200
TH300
TH400
TR200
TR300
TF280
Siemens PT100 temperature sensor
siemens a5e00
Siemens PT100 temperature sensor RTD
Siemens PT100 temperature sensor din iec 60751
siemens ad2 c11
Siemens Ni1000 temperature sensor
siemens thermocouple
Siemens PT100 w
Siemens K11
KEMA 01 ATEX 1264
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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infineon radar
Abstract: silicon carbide CH-8047 P-2720-093
Text: ONE STEP BEYOND t h i n Q ! T M S i l i co n Ca r b i d e P o w e r D i o d e s www.infineon.com Never stop thinking. THE CUTTING EDGE I m a g i n e a s e m i c o n d u c t o r m a t e r i a l that can withstand the heat of a jet engine and the cold of outer space. In fact, why imagine – when it’s
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B112-H7799-X-X-7600
DK-2750
infineon radar
silicon carbide
CH-8047
P-2720-093
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D 346 transistor
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218AA
C67078-S3120-A4
O-218
D 346 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings
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OCR Scan
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O-218AA
C67078-S3120-A2
flE35b05
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PDF
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TRANSISTOR sd 346
Abstract: No abstract text available
Text: SIEMENS BUZ 346 N oi fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 Vds 50 V b 58 A ^DS on Package Ordering Code 0.018 Q TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218
C67078-S3120-A2
TRANSISTOR sd 346
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218AA
C67078-S3120-A4
fi53SbD5
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PDF
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V10390
Abstract: C67078-A1607-A2
Text: ÌT T aaD D • ûEBSbDS oom b ? a 2 88D 14678 msiz g D BUZ 58 SIEMENS AKTIENûESELLSCHAF_ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description Case Type = 1000 V ^DS = 4,2 A h ^DS cn = 2,0 n SIPMOS, N-channel, enhancement mode
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OCR Scan
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C67078-A1607-A2
235bOS
0014bÃ
V10390
C67078-A1607-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter
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OCR Scan
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O-218AA
C67078-S3130-A2
A235bG5
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PDF
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Untitled
Abstract: No abstract text available
Text: ÔÛD D • fl535b05 OOmfaflM û «SIEfi 88D 14684 D T - , 3 ¿7 ” / 3 *=* BUZ 58 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channei a 1000 V Drain-source voltage K>s = 3,6 A Continuous drain current h Draln-source on-resistance ^D S o n = 2,6 a
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OCR Scan
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fl535b05
C67078-A1607-A3
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62703-F
Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure
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OCR Scan
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0G1734Ô
CFY30
62703-F
OT-143
fl23b32Q
GG173S7
T--31--25
CFY30
GaAs FET cfy 19
siemens gaas fet
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C67078-A1607-A3
Abstract: BUZ58A
Text: ÔÛD D • fl535b05 OOmfaflM û «SIEfi 88D 14684 D T - ,3 ¿7 ”/ 3 *=* BUZ 58 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channei a 1000 V Drain-source voltage K>s = 3,6 A Continuous drain current h a Draln-source on-resistance ^ D S o n =
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OCR Scan
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fl535b05
C67078-A1607-A3
C67078-A1607-A3
BUZ58A
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bsy34
Abstract: No abstract text available
Text: 2SC D • 023SbüS 0DG4Ô31 G « S I E G T -lS -tf N P N Silicon Planar Transistors BSY34 - SIEMENS AKTIEN6E SE LL SC HA F BSY58 BSY 34 and BSY 58 are double diffused epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41 873 . The collectors are electrically connected to the cases.
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OCR Scan
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023Sb
BSY34
BSY58
Q60218-Y34
Q60218-Y58
fl235b05
a23SbDS
0004fi37
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z58 diode
Abstract: No abstract text available
Text: fcTT &3D D • ÖS3Sfc.GS OGlMbVa 2 M S I E G 88D 14678 — D BUZ 58 SIEMENS AK TI EN 6E SE LLSCH AF- Main ratings N-Channel = 1000 V Draln-source voltage ^DS = 4,2 A Continuous drain current h Draln-source on-resistance ^DS on = 2,0 n Description SIPMOS, N-channel, enhancement mode
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OCR Scan
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C67078-A1607-A2
as35bos
G--03
fl235bQ5
0014bfl3
z58 diode
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BCY59
Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors
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OCR Scan
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23Sb05
BCY58
BCY59
Q60203-Y58
Q60203-Y58-G
Q60203-Y58-H
Q60203-Y58-J
Q60203-Y58-K
Q60203-Y59
Q60203-Y59-G
BCY 85
Q60203-Y58
Q60203-Y58-G
Q60203-Y58-H
Q60203-Y58-J
Q60203-Y58-K
Q60203-Y59
Q60203-Y59-G
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BF 857 TRANSISTORS
Abstract: BF859 BF857 DD41 transistors bf marking s59
Text: SIE D SIEM ENS • ft23Sb05 0041850 fiEb « S I E G SIEMENS AKTIENGESELLSCHAF T - '3 3 'C 6 i NPN Silicon Transistors with High Reverse Voltage BF 857 . BF 859 • High breakdown voltage • Low collector-emitter saturation voltage Type Marking BF 857 BF 858
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OCR Scan
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023Sb05
T-33rce>
Q62702-F784
Q62702-F785
Q62702-F786
O-202
BF859
EHP00559
6S35b05
BF857
BF 857 TRANSISTORS
BF857
DD41
transistors bf
marking s59
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BCY 68
Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors
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OCR Scan
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23Sb05
BCY58
BCY59
Q60203-Y58
Q60203-Y58-G
Q60203-Y58-H
Q60203-Y58-J
Q60203-Y58-K
Q60203-Y59
Q60203-Y59-G
BCY 68
0431I
BCY68
BCY 59
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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OCR Scan
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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Untitled
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS 240A Features • • • • N channei Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type v DS h ^OS on Package Ordering Code BTS 240A 50 V 58 A 0.018 n TO-218AA C67078-A5100-A3
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OCR Scan
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O-218AA
C67078-A5100-A3
O-218
C67078-S5100-A3
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PDF
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K4887-K4
Abstract: B25355-K167-K4 ws dvd 290
Text: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting
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OCR Scan
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KLK0875â
KLK1270-C
B25355-F6405-K1
fi235bQ5
K4887-K4
B25355-K167-K4
ws dvd 290
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PDF
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Untitled
Abstract: No abstract text available
Text: Snap-In Capacitors L L Grade B 41 503 B 43 503 For professional switch-mode power supplies Operation at temperatures up to 105 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board
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OCR Scan
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KAL0274-A
A53SbOS
S235bOS
00742T3
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