SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Search Results

SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LLE18100X Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES	Original	LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431	PDF
epsilam 10 Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16	PDF
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239	PDF
2N5320 Abstract: 2N5321 2N5322 2N5323 Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal	Original	2N5320 2N5321 2N5322 2N5323 2N5320 2N5321 2N5323	PDF
2N5320 Abstract: 2N5321 2N5321 THOMSON 2N5322 2N5323 Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal	Original	2N5320 2N5321 2N5322 2N5323 2N5320 2N5321 2N5321 THOMSON 2N5323	PDF
2SC2312 Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating	OCR Scan	2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb	PDF
2N1893 Abstract: 100khz 5v transistor npn Text: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N1893 500mA 800mW 0Q33G3, 20MHz 100kHz 100khz 5v transistor npn	PDF
2N4300 Abstract: No abstract text available Text: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic	OCR Scan	2N4300 2N4300 25UCJ	PDF
2SA816 Abstract: 2SC1626 BOX69477 COB20 MIPO Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED	OCR Scan	2SA816 2SC1626 2SC1626 0-50V T0-220B 750mA 500mA 150mA 2SA816 BOX69477 COB20 MIPO	PDF
2SC1729 Abstract: 1 w NPN EPITAXIAL PLANAR TYPE Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •	OCR Scan	2SC1729 175MHz 175MHz. T-31E 175MHz 1 w NPN EPITAXIAL PLANAR TYPE	PDF
2SC1947 equivalent Abstract: 2sc1947 RF Power Amplifiers 1P H transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	2SC1947 175MHz 175MHz 2SC1947 2SC1947 equivalent RF Power Amplifiers 1P H transistor	PDF
air variable capacitor Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir	PDF
transistor D 2331 Abstract: 2331 TRANSISTOR T31B Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES	OCR Scan	2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC1968A 2SC1968A 470MHz 470MHz.	PDF

Untitled Abstract: No abstract text available Text: M 2N 1893 NPN SILICON PLANAR M IC R O EPITAXIAL TRANSISTOR EL-ECSnrFRQrsllCSS CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage	OCR Scan	2N1893 500mA 800mW 100jiA 100kHz 20MHz 100kHzÂ	PDF
2SA816 Abstract: 2SC1626 2SC16 Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED	OCR Scan	2SA816 2SC1626 0-50W T0-220B 80x69477 3-43018J-6 3f093J03 2SA816 2SC1626 2SC16	PDF
2SC1626 Abstract: 2SA816 Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED	OCR Scan	2SA816 2SC1626 T0-220B 2SA816 0-50W 750mA CHARACT2SC1626 2SC1626	PDF
2sc1968 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •	OCR Scan	2SC1968A 2SC1968A 470MHz 470MHz. 2sc1968	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W	OCR Scan	2SC4838 2SC4838 65GHz. 65GHz, 2SC4525	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz	PDF
2sc4624 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz	PDF
2SC730 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	2SC730 2SC730 150MHz	PDF
2SC730 Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.	OCR Scan	2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band	PDF
2SC2694 Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent Text: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •	OCR Scan	2SC2694 2SC2694 175MHz 175MHz, DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent	PDF

SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Search Results

SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Result Highlights (5)

SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR Datasheets Context Search

LLE18100X

epsilam 10

epsilam 10

2N5320

2N5320

2SC2312

2N1893

2N4300

2SA816

2SC1729

2SC1947 equivalent

air variable capacitor

transistor D 2331

Untitled

Untitled

2SA816

2SC1626

2sc1968

Untitled

Untitled

2sc4624

2SC730

2SC730

2SC2694