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    SIS43 Price and Stock

    Vishay Siliconix SIS438DN-T1-GE3

    MOSFET N-CH 20V 16A PPAK 1212-8
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    DigiKey SIS438DN-T1-GE3 Cut Tape 40,307 1
    • 1 $1.23
    • 10 $0.774
    • 100 $1.23
    • 1000 $0.3602
    • 10000 $0.3602
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    SIS438DN-T1-GE3 Digi-Reel 40,307 1
    • 1 $1.23
    • 10 $0.774
    • 100 $1.23
    • 1000 $0.3602
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    SIS438DN-T1-GE3 Reel 39,000 3,000
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    • 10000 $0.31376
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    Vishay Siliconix SIS434DN-T1-GE3

    MOSFET N-CH 40V 35A PPAK 1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS434DN-T1-GE3 Cut Tape 12,928 1
    • 1 $1.49
    • 10 $0.942
    • 100 $1.49
    • 1000 $0.44769
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    SIS434DN-T1-GE3 Digi-Reel 12,928 1
    • 1 $1.49
    • 10 $0.942
    • 100 $1.49
    • 1000 $0.44769
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    SIS434DN-T1-GE3 Reel 12,000 3,000
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    RS SIS434DN-T1-GE3 Bulk 3,000
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    • 10000 $0.89
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    New Advantage Corporation SIS434DN-T1-GE3 48,000 1
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    • 10000 $0.5857
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    Vishay Siliconix SIS435DNT-T1-GE3

    MOSFET P-CH 20V 30A PPAK1212-8
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    DigiKey SIS435DNT-T1-GE3 Cut Tape 5,747 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
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    SIS435DNT-T1-GE3 Digi-Reel 5,747 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
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    SIS435DNT-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.29524
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    New Advantage Corporation SIS435DNT-T1-GE3 9,000 1
    • 1 -
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    • 10000 $0.3385
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    Vishay Siliconix SIS436DN-T1-GE3

    MOSFET N-CH 25V 16A PPAK 1212-8
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    SIS436DN-T1-GE3 Digi-Reel 1
    • 1 $0.56
    • 10 $0.56
    • 100 $0.56
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    Vishay Siliconix SIS439DNT-T1-GE3

    MOSFET P-CH 30V 50A PPAK1212-8S
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    SIS439DNT-T1-GE3 Digi-Reel 1
    • 1 $0.49
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    Find more SIS43 price and stock on Findchips.com

    SIS43 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS43 Unknown Small Size, Low Profile SMD type Original PDF
    SIS43 Xinwang Electronics SMT Power Inductor Original PDF
    SIS430DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 35A PPAK 1212-8 Original PDF
    SIS43-100 Unknown Small Size, Low Profile SMD type Original PDF
    SIS43-101 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-102 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-150 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-151 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-1R0 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-1R5 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-220 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-221 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-2R2 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-330 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-331 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-3R3 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-470 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-471 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS434DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 35A PPAK 1212-8 Original PDF
    SIS43-4R7 Delta Electronics Small Size Low Profile SMD type Original PDF

    SIS43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS436DN SiS436DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS436DN SiS436DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sis430dn

    Abstract: No abstract text available
    Text: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiS430DN 18-Jul-08

    SiS432DN-T1-GE3

    Abstract: No abstract text available
    Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS432DN SiS432DN-T1-GE3 18-Jul-08

    69053

    Abstract: AN609 43526
    Text: SiS430DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiS430DN AN609, 04-Nov-08 69053 AN609 43526

    AN609

    Abstract: No abstract text available
    Text: SiS432DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiS432DN AN609, 21-Oct-08 AN609

    74537

    Abstract: 4532 MOSFET AN609
    Text: SiS436DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiS436DN AN609, 06-Feb-09 74537 4532 MOSFET AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiS436DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS439DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiS434DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS436DN SiS436DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS438DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS438DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS436DN SiS436DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS438DN 2002/95/EC SiS438DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S-8265

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 11-Mar-11 S-8265

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS432DN SiS432DN-T1-GE3 11-Mar-11

    SIS43

    Abstract: SIS43-100 SIS43-150 SIS43-1R0 SIS43-1R5 SIS43-220 SIS43-2R2 SIS43-330 SIS43-3R3 SIS43-4R7
    Text: SMT Power Inductor SIS43 Type Features • ■ ■ ■ ■ ■ Small size 6.6mm*4.45mm , low profile (2.9mm max. height) SM D type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing.


    OCR Scan     		PDF SIS43 0-1000uH SIS43-1R5 SIS43-2R2 SIS43-3R3 SIS43-4R7 SIS43-6R8 SIS43-100 SIS43-150 SIS43-220 SIS43-1R0 SIS43-330