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    SMD TRANSISTOR 015 G Search Results

    SMD TRANSISTOR 015 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 015 G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    857 TRANSISTOR smd

    Abstract: TRANSISTOR SMD typ 056 smd transistor 857 data HFE9
    Text: SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22


    Original     		SFT4300S SFT5333S MIL-PRF-19500 TR0097B 857 TRANSISTOR smd TRANSISTOR SMD typ 056 smd transistor 857 data HFE9 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22


    Original     		SFT4300S SFT5333S MIL-PRF-19500 TR0097B PDF

    LM376

    Abstract: LM305H LM305 LM105H/883 lm376 datasheet positive voltage regulator lm305ah smd linear regulator 7755 LM205 lm305ah
    Text: LM105 LM205 LM305 LM305A LM376 Voltage Regulators General Description The LM105 series are positive voltage regulators similar to the LM100 except that an extra gain stage has been added for improved regulation A redesign of the biasing circuitry removes any minimum load current requirement and at the


    Original     		LM105 LM205 LM305 LM305A LM376 LM100 LM305H LM105H/883 lm376 datasheet positive voltage regulator lm305ah smd linear regulator 7755 lm305ah PDF

    TRANSFORMER ERL35

    Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
    Text: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PM30006-01 115Vac/230Vac 80PLUS SG6931, SG6516, SG6858 TRANSFORMER ERL35 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer PDF

    230v to 12v step down transformer

    Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
    Text: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7


    Original     		PM30006-02 80PLUS SG6931, SG6516, SG6858 230v to 12v step down transformer 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34 PDF

    PTF082001E

    Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
    Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest


    Original     		PTF082001E PTF082001F PTF082001E PTF082001F 200-watt, PTF082001F* IS-95 17erous atc 1725 LM7805 smd smd transistor infineon 106T BCP56 106T capacitor PDF

    LM7805 smd

    Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
    Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest


    Original     		PTF081301E PTF081301F PTF081301E PTF081301F 130-watt, LM7805 smd BCP56 LM7805 transistor SMD LOA DD 127 D TRANSISTOR PDF

    LM7805 smd

    Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
    Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF080451 PTF080451 LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451E PDF

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF210451 PTF210451 rogers PDF

    210451

    Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E PDF

    LM7805

    Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF080901 PTF080901 LM7805 LM7805 smd 8 pin PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND PDF

    Untitled

    Abstract: No abstract text available
    Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest


    Original     		PTF180301E PTF180301F 30-watt, PTF180301F* PDF

    P220E

    Abstract: infineon smd package
    Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest


    Original     		PTF180901E PTF180901F 90-watt P220E infineon smd package PDF

    Untitled

    Abstract: No abstract text available
    Text: PTF180901 High Power RF LDMOS FET 90 W, 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180901 is a 90 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF180901 PTF180901 PDF

    military mcm 1553

    Abstract: Defense Electronics Supply Center NGCP3580 qml-38534 6 pin TRANSISTOR SMD CODE PA NORTHROP GRUMMAN SYSTEMS CORPORATION smd TRANSISTOR NY Northrop Grumman Electronic Systems
    Text: March 15, 2010 Radiation Performance Data Package MUX8530-S MUX8530-S DSCC SMD Part Number: 5962-0923001KXC 16 channel analog multiplexer, high impedance analog input, single output with ESD protection Prepared by: Aeroflex Plainview, Inc. 35 South Service Road


    Original     		MUX8530-S MUX8530-S 5962-0923001KXC MUX8530-S: MUX8530 16-Channel NGCP3580 military mcm 1553 Defense Electronics Supply Center NGCP3580 qml-38534 6 pin TRANSISTOR SMD CODE PA NORTHROP GRUMMAN SYSTEMS CORPORATION smd TRANSISTOR NY Northrop Grumman Electronic Systems PDF

    smd transistor marking l6

    Abstract: TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4
    Text: PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PTF180601 PTF180601 smd transistor marking l6 TRANSISTOR SMD 2X K PCC103BCT marking us capacitor pf l1 smd marking f2 PTF180601C PTF180601E 32 z 45 SMD TRANSISTOR MARKING l4 PDF

    LM7805

    Abstract: PTF141501E
    Text: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz


    Original     		PTF141501E PTF141501F 150-watt, PTF141501E* PTF141501F* LM7805 PDF

    PTF180301E

    Abstract: LM7805 RESISTOR 2020 package 47 ohm 180301E
    Text: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest


    Original     		PTF180301E PTF180301F 30-watt, PTF180301F* LM7805 RESISTOR 2020 package 47 ohm 180301E PDF

    SMD TRANSISTOR MARKING DE

    Abstract: TSDF54040 smd sot-363 rf amplifier smd wd4 smd transistor g1
    Text: TSDF54040 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		TSDF54040 D-74025 16-Mar-99 SMD TRANSISTOR MARKING DE TSDF54040 smd sot-363 rf amplifier smd wd4 smd transistor g1 PDF

    TSDF52424

    Abstract: AGC Amplifiers smd RF low noise sot-363 9296
    Text: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


    Original     		TSDF52424 05-Mar-99 TSDF52424 AGC Amplifiers smd RF low noise sot-363 9296 PDF

    100-16L

    Abstract: smd transistor 2d NPN Transistor isolated T0-220
    Text: 1.25A High Efficiency Switching Regulator Features Description The CS-3972 is a 1.25A, 60V, cur­ rent mode, high efficiency, switch­ ing regulator circuit. It can be con­ figured in buck, boost, forward, isolated and non-isolated topolo­ gies, using a single-ended switch.


    OCR Scan     		CS-3972 CS-3972 CS-3972DW16 CS-3972T5 CS-3972TV5 CS-3972TH5 CS-3972N8 T0-220 O-220 100-16L smd transistor 2d NPN Transistor isolated T0-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI EMENS TLE 4271 5-V Low-Drop Fixed Voltage Regulator Features • • • • • • • • • • Output voltage tolerance < ± 2% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


    OCR Scan     		Q67000-A9210-A901 P-T0220-7-11 Q67000-A9244-A901 P-T0220-7-12 Q67006-A9195-A901 P-T0263-7-1 Q67000-A9210-C801 P-T0220-7-1 Q67000-A9244-A801 P-T0220-7-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.25A High Efficiency Switching Regulator D escription The CS-3972 is a 1.25A, 60V, cur­ rent mode, high efficiency, switch­ ing regulator circuit. It can be con­ figured in buck, boost, forward, isolated and non-isolated topolo­ gies, using a single-ended switch.


    OCR Scan     		CS-3972 CS-3972 CS-3972DW16 CS-3972T5 CS-3972TV5 CS-3972TH5 CS-3972N8 T0-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.25A High Efficiency Switching Regulator Description The CS-3972 is a 1.25A, 60V, cur­ rent mode, high efficiency, switch­ ing regulator circuit. It can be con­ figured in buck, boost, forward, isolated and non-isolated topolo­ gies, using a single-ended switch.


    OCR Scan     		CS-3972 CS-3972DW16 CS-3972T5 CS-3972TV5 CS-3972TH5 CS-3972N8 O-220 PDF