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    STMicroelectronics STN3NE06

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    Bristol Electronics STN3NE06 1,000
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    Quest Components STN3NE06 944
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    Chip 1 Exchange STN3NE06 11,015
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    SGS Thomson STN3NE06L

    POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components STN3NE06L 2,676
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    Fairchild Semiconductor Corporation STN3NE06L

    POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components STN3NE06L 991
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    Others STN3NE06LSA

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    Others STN3NE06

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    STN3NE06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STN3NE06 STMicroelectronics N - CHANNEL 60V - 0.08Ohm - 3A - SOT-223 STripFET POWER MOSFET Original PDF
    STN3NE06 STMicroelectronics N - Channel 60 V - 0.08 ohm - 3 A - SOT-223 STripFET Power MOSFET Original PDF
    STN3NE06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STN3NE06L STMicroelectronics N - CHANNEL 60V - 0.10 ? - 3A - SOT-223 STripFET POWER MOSFET Original PDF
    STN3NE06L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STN3NE06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N3NE06L

    Abstract: N3NE n3ne06 STN3NE06L WO-260
    Text: STN3NE06L  N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE ST N3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3 A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STN3NE06L OT-223 N3NE06L N3NE06L N3NE n3ne06 STN3NE06L WO-260

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    STN3NE06

    Abstract: P008B DIODE
    Text: STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN3NE06 60 V < 0.100 Ω 3A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED


    Original     		PDF STN3NE06 OT-223 STN3NE06 P008B DIODE

    P008B

    Abstract: STN3NE06 SGS-Thomson mosfet
    Text: STN3NE06 N - CHANNEL ENHANCEMENT MODE "EXTREMELY HIGH DENSITY" POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STN3NE06 60 V < 0.12 Ω 3A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STN3NE06 OT-223 P008B STN3NE06 SGS-Thomson mosfet

    N3NE06

    Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
    Text: STN3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		PDF STN3NE06 N3NE06 N3NE06 P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638

    N3NE06

    Abstract: P008B DIODE STN3NE06 c 1181
    Text: STN3NE06  N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N3NE06 60 V < 0.100 Ω 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		PDF STN3NE06 OT-223 N3NE06 N3NE06 P008B DIODE STN3NE06 c 1181

    STN3NE06

    Abstract: No abstract text available
    Text: STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN3NE06 60 V < 0.100 Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		PDF STN3NE06 OT-223 STN3NE06

    STN3NE06L

    Abstract: No abstract text available
    Text: STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		PDF STN3NE06L OT-223 STN3NE06L

    STN3NE06L

    Abstract: P Channel Low Gate Charge transistor di 960
    Text: STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L V DSS R DS on ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		PDF STN3NE06L OT-223 STN3NE06L P Channel Low Gate Charge transistor di 960

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    Complementary MOSFETs buz11

    Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
    Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof


    Original     		PDF STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp

    VBG15NB37

    Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


    Original     		PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L VBG15NB37 STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L

    std2n52

    Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06


    Original     		PDF OT-82 OT-223 O-220 220TM O-220FP MAX220TM 218TM O-247 MAX247TM STB80NE03L-06 std2n52 stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L


    Original     		PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    STripFET

    Abstract: k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L
    Text: STRIPFET AN UPDATE OF OUR “NE” SERIES LOW VOLTAGE POWER MOSFETs The continuous downward price pressure has forced all suppliers to optimize silicon and implement consequent product rationalization. This trend is particularly true for low voltage Power MOSFETs, where


    Original     		PDF conventionalTD17N06 Si9945AEY STK17N10 STP20N10 BUZ21 STB80N03L-06 STP80N03L-06 STB60N03L-10 STP60N03L-10 STB40N03L-20 STripFET k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L

    Untitled

    Abstract: No abstract text available
    Text: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STN3NE06 OT-223 OT-223

    Untitled

    Abstract: No abstract text available
    Text: STN3NE06L N - CHANNEL 60V - 0.10 £2 - 3A - SOT-223 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STN 3N E06L V dss R d S oii Id 60 V < 0 .1 2 0 a 3 A = • TYPICAL RDS(on) 0.10 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    OCR Scan     		PDF STN3NE06L OT-223 OT-223

    AP101

    Abstract: No abstract text available
    Text: STN3NE06L N - CHANNEL 60V - 0 .08 a - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L . . . . . Voss R D S o n Id 60 V < 0 .1 0 0 Î2 3 A = n TYPICAL R d s (oh) 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 1 0 0 % AVALANCHE TESTED


    OCR Scan     		PDF STN3NE06L OT-223 STN3NE06L AP101

    3ne06

    Abstract: No abstract text available
    Text: STN3NE06 N - CHANNEL 60V - 0.08Î2 - 3A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 3N E06 60 V < 0 .1 0 0 Q 3 A . . . . . TYPICAL Fbs(on) = 0.08 Ü EXCEPTIONALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    OCR Scan     		PDF STN3NE06 OT-223 3ne06