T 250 TRANSISTOR Search Results

T 250 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

T 250 TRANSISTOR Price and Stock

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Phoenix Contact NLC-050-24DC-OUT-SIM-T Card to simulate transistor outputs on a Nanoline base unit
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T 250 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC2922 SANKEN Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)	Original	MJ3773 2N5631 2N6031 BDY37A TRW6259 2N6259 MJE4343 2SC2922 SANKEN MJ15024 MJ15025 SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A	PDF
FCD830 Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>	OCR Scan	FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82Saturation FCD830, FCD830 B 511 transistor diode 513 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830A	PDF
FCD830C Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>	OCR Scan	FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82Saturation FCD830, FCD830C FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B	PDF
BT3904 Abstract: BC850B2 Text: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat	OCR Scan	O-236 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BT3904 BC850B2	PDF
FCD820D Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>	OCR Scan	FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82t FCD820 FCD820D FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A	PDF
FCD810 Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>	OCR Scan	FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82he FCD810 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C	PDF
B 511 transistor Abstract: FCD810C FCD810D FCD820B FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>	OCR Scan	FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD820 B 511 transistor FCD810C FCD810D FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A	PDF
NSDU07 Abstract: bc640 to237 2n6555 T0202 2M6718 2N4033 Text: bflE T> m t.SD113D □OB'ISIS STT • N S C 5 NATL SEMICOND DISCRETE Devices VCE0(su*t) (Wilts) Min 100 PNP NPN 2N6553 2M6718 80 2N6730 NF (dB) Max Pd (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200 TO-237{91 )	OCR Scan	SD113D 2N6553 2M6718 NSDU07 2N6730 T0-202 O-237 bc640 to237 2n6555 T0202 2N4033	PDF
PN222A Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A Text: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250	OCR Scan	bS0113Q 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 2N1613 PN222A 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A	PDF
Untitled Abstract: No abstract text available Text: LM H6601 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Texa s In s t r u m e n t s Literature Number: SNOSAK9D t - . * O cto b e r20 Q w Semiconductor LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Am plifier with Shutdown Features	OCR Scan	H6601 LMH6601/LMH6601Q LMH6601/LMH6601Q LMH6601	PDF
SILICON TRANSISTOR CORP Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311 Text: 88D 00799 D T '3 3 -13 flfl DE \|fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350	OCR Scan	flaS402E SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 SRSP4296 SRSP4297 SRSP4298 SRSP4299 SILICON TRANSISTOR CORP NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430	PDF
bf506 Abstract: BF970A Text: 50 RF/Microwave Devices Tuner Transistors co n t. Ratings Type No. Pkfl. Vcio (V) TO-92 SOT-23 SOT-23 SOT-23 TO-92 SOT-37 SOT-37 20 35 20 30 20 35 20 f î (mA) (mW) 25 30 25 25 25 30 30 250 250 300 300 250 160 140 : (MHz) (dB) Characteristics @ f (MHz) G um	OCR Scan	BF506 BF569 BF579 BF660 BF926 BF970A BF979 OT-23	PDF
da 3309 Abstract: amplificateur de son 3v self choc 2n3309 2522N signaux SELF DE CHOC Text: 2 N 3309 NPN SILICON TRANSISTORS, Ei IT A X IA L PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X • Power amplification at 250 MHz A m p lifica tio n de puissance à 250 MHz v CBO 50V v CEO 30 V O *T Gp 300 MHz min. 2W min. 250 MHz 7 dB min.	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 £ _ CO M PLEM ENTARY T Y P E - BFN17 PARTMARKING DETAILS - DD ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V cbo 250 V V CEO 250 V V ebo 5 V mA PARAMETER SYMBOL Collector-Base Voltage	OCR Scan	BFN17 lc-10m 300us. FMMTA42	PDF

A 933 S transistors Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s Text: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270	OCR Scan	O-92S) 2SA825 933LN 2SC1740 1740LN 2SC2389 2SC2808 2SC1741 2SC2872 2SC3359 A 933 S transistors A933S A830-S a830s A854S 2sc low noise 2SC1645 2SD 92 M a1515s	PDF
Untitled Abstract: No abstract text available Text: • 7 ^ 2 ^ 2 3 7 Q Q M b 3 G S T3Ö « S f i T H STP6N25 STP6N25FI fZ T SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI V d ss R d S o ii Id 250 V 250 V < 1a < 1 SÎ 6 A 4 A . TYPICAL RDS(on) = 0.7 Q	OCR Scan	STP6N25 STP6N25FI 004b311 STP6N25/FI	PDF
2N8211 Abstract: 2NS298 2n830 2N8300 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3736 Text: Power Transistors TO-66 Case T Y P E NO. NPN PNP •c Pd A M AX (W ) ie (A) BV C b o (V) bvCEO MIN MIN MIN M AX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 55 55 175 250	OCR Scan	2N3054 2N3054A 2N6049 2N3583 2N6420 2N3584 2N6421 2N3585 2N6422 2N3738 2N8211 2NS298 2n830 2N8300 2N3054 2N3736	PDF
H11A1 Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26 Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60	OCR Scan	H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA230, MCA255 MCA255 MCT26	PDF
phototransistor til 33 Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2 Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60	OCR Scan	H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL114, TIL11S, phototransistor til 33 TIL112 TIL111 Til 160 h11a TIL116	PDF
TIL111 equivalent Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1 Text: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60	OCR Scan	H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL113 TIL119 TIL111 equivalent TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113	PDF
1431 transistor equivalent Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60	OCR Scan	H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA20 1431 transistor equivalent MCA255	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN 5249 Thick Film Hybrid 1C _STK401-250 S A ßro AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.08%) Overview Package Dimensions T he S T K 401-250 is a 2-channel audio pow er am plifier IC that supports 6/3£2 output load im pedances. It is fully pin	OCR Scan	STK401-250 STK400-X00 STK401-X00 STK401-250] 0021D1D	PDF
Untitled Abstract: No abstract text available Text: / T L in t A B ^ > 7 LT1351 TECHNOLOGY 250\|iA, 3MHz, 200V/^s O p era tional A m plifier FCRTUR6S DCSCAIPTIOn • 3MHz Gain Bandwidth ■ 200V/jos Slew Rate ■ 250\|iA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor	OCR Scan	LT1351 00V/jos LT1351 254mm) LT1352/LT1353 00V/hs LT1354 12MHz, 00V/jisQ 551fl4bfl	PDF
MCT2E equivalent Abstract: mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112 MCT26 Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60	OCR Scan	H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCT26 MCT26 MCT2E equivalent mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112	PDF

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T 250 TRANSISTOR Search Results

T 250 TRANSISTOR Result Highlights (5)

T 250 TRANSISTOR Price and Stock

Phoenix Contact NLC-050-24DC-OUT-SIM-T

T 250 TRANSISTOR Datasheets Context Search

2SC2922 SANKEN

FCD830

FCD830C

BT3904

FCD820D

FCD810

B 511 transistor

NSDU07

PN222A

Untitled

SILICON TRANSISTOR CORP

bf506

da 3309

Untitled

A 933 S transistors

Untitled

2N8211

H11A1

phototransistor til 33

TIL111 equivalent

1431 transistor equivalent

Untitled

Untitled

MCT2E equivalent